Powerex CM600DY-24S Data Sheet

CM600DY-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A

(3 PLACES)

Q

LABEL

E2

D

K

E2

Di1

K

G

G2

E2

C1

E1
G1

M

Z

FF

U

Q

G2

E2 (Es2)

C1

Tr1

E1 (Es1)
G1

H

N

G

X

V

W

S

R

Tolerance Otherwise Specified

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

V

J

(4 PLACES)

B

C2E1

L

K

E

C

Tr2

C2E1

P P P

Di2

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0

B 3.15 80.0

C 1.14+0.04/-0.02 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 2.44±0.01 62.0±0.25

F 0.98 25.0

G 0.24 6.0

H 0.59 15.0

J 0.81 20.5

K 0.55 14.0

L 0.26 Dia. 6.5 Dia.

M M6 Metric M6

Dimensions Inches Millimeters

N 1.18 30.0

P 0.71 18.0

Q 0.28 7.0

R 0.83 21.2

S 0.33 8.5

T 0.016 0.4

U 0.16 4.0

V 0.11 2.8

W 0.30 7.5

X 0.21 6.3

Y 0.47 12.0

Z 0.85 21.5

Dual IGBT
S-Series Module

600 Amperes/1200 Volts

Description:

Y

Powerex Dual IGBT Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM600DY-24S is a
1200V (V
IGBT Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 600 24

), 600 Ampere Dual

CES

CES

11/12 Rev. 0

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DY-24S
Dual IGBT S-Series Module

600 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (G-E Short-Circuited) V

Gate-Emitter Voltage (C-E Short-Circuited) V

Collector Current (DC, TC = 112°C)

*2,*4

IC 600 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse, Repetitive)*3 I

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature T

Maximum Case Temperature*4 T

Operating Junction Temperature (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink ther mal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

49.1

35.6

20.4

0

33.6

Tr2

Tr2

Di2

Di2

1200 Volts

CES

±20 Volts

GES

1200 Amperes

CRM

4050 Watts

tot

*1

600 Amperes

E

*1

1200 Amperes

ERM

2500 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(opr)

-40 to +125 °C

stg

46.8

Tr2

Di2

79.3

66.1

Di1

Tr1

Di1

Tr1

Di1

Tr1

57.5

44.3

31.1

0

Tr1/Tr2: IGBT Di1/Di2: FWDi

0

LABEL SIDE

2 11/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DY-24S
Dual IGBT S-Series Module

600 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 600A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts

IC = 600A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 600A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts

IC = 600A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 600A, VGE = 15V — 1400 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 600A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Emitter-Collector Voltage V

(Terminal) IE = 600A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts

IE = 600A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts

Emitter-Collector Voltage V

(Chip) IE = 600A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts

IE = 600A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 600A, — 65.9 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Gate Resistance rg Per Switch — 3.3 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 60mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.85 2.25 Volts

CE(sat)

IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts

CE(sat)

— — 60 nF

ies

VCE = 10V, G-E Short-Circuited — — 12 nF

oes

— — 1.0 nF

res

— — 800 ns

d(on)

RG = 0Ω, Inductive Load — — 600 ns

d(off)

*1

IE = 600A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts

EC

*1

IE = 600A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts

EC

*1

VCC = 600V, IE = 600A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 32 — µC

rr

VGE = ±15V, RG = 0Ω, — 79.1 — mJ

off

*1

Tj = 150°C, Inductive Load — 55.2 — mJ

rr

, G-E Short-Circuited — — 1 mA

CES

, C-E Short-Circuited — — 5 µA

GES

311/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DY-24S
Dual IGBT S-Series Module

600 Amperes/1200 Volts

Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*4 R

Thermal Resistance, Junction to Case*4 R

Contact Thermal Resistance, R

Case to Heatsink*4 (Per 1/2 Module)

Mechanical Characteristics

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb

Weight m — 580 — Grams

Flatness of Baseplate ec On Centerline X, Y*7 -100 — +100 µm

Recommended Operating Conditons, Ta = 25°C

Characteristics Symbol Test Conditions Min. Typ. Max. Units

(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts

Gate (-Emitter Drive) Voltage V

External Gate Resistance RG Per Switch 0 — 7.5 Ω

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink ther mal resistance should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

Y

X

– CONCAVE

+ CONVEX

Q Per IGBT — — 37 K/kW

th(j-c)

D Per IFWDi — — 60 K/kW

th(j-c)

Thermal Grease Applied — 18 — K/kW

th(c-s)

*6

Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts

GE(on)

20.4

3 mm

49.1

35.6

46.8

0

33.6

Tr2

Tr2

Tr2

Di2

Di2

Di2

79.3

66.1

Di1

Tr1

Di1

Tr1

Di1

Tr1

57.5

44.3

31.1

BOTTOM

LABEL SIDE

BOTTOM

BOTTOM

– CONCAVE

+ CONVEX

0

Tr1/Tr2: IGBT Di1/Di2: FWDi

0

LABEL SIDE

4 11/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DY-24S
Dual IGBT S-Series Module

600 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(CHIP - TYPICAL)

1200

VGE = 20V

1000

15

13.5

12

800

, (AMPERES)

C

11

600

400

200

COLLECTOR CURRENT, I

0

10

9

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(CHIP - TYPICAL)

10

8

, (VOLTS)

CE(sat)

6

IC = 1200A

Tj = 25°C

Tj = 25°C

SATURATION VOLTAGE CHARACTERISTICS

3.5

VGE = 15V

3.0

Tj = 25°C
T

, (VOLTS)

2.5

CE(sat)

T

2.0

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

FORWARD CHARACTERISTICS

4

10

Tj = 25°C
T
T

3

10

, (AMPERES)

E

COLLECTOR-EMITTER

(CHIP - TYPICAL)

= 125°C

j

= 150°C

j

FREE-WHEEL DIODE

(CHIP - TYPICAL)

= 125°C

j

= 150°C

j

1200200 400 600 800 1000

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

IC = 600A

IC = 240A

2

10

EMITTER CURRENT, I

1

10

0 1.0 0.5 2.51.5 2.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

, (VOLTS)

EC

511/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DY-24S
Dual IGBT S-Series Module

600 Amperes/1200 Volts

3

10

, (nF)

2

10

res

, C

oes

, C

ies

1

10

0

10

CAPACITANCE, C

VGE = 0V

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING CHARACTERISTICS

3

10

CAPACITANCE VS. V

(TYPICAL)

0

10

10

HALF-BRIDGE

(TYPICAL)

t

d(off)

1

CE

C

C

C

ies

oes

res

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL)

3

10

2

10

10

1

10

VCC = 600V
V

GE

R

= 0Ω

G

T

= 125°C

j

Inductive Load

1

SWITCHING TIME, (ns)

2

t

d(off)

t

d(on)

= ±15V

2

10

COLLECTOR CURRENT, I

, (AMPERES)

C

t

f

t

r

3

10

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

10

3

t

d(on)

10

4

2

10

SWITCHING TIME, (ns)

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

Inductive Load

1

10

1

10

COLLECTOR CURRENT, I

t

d(on)

10

2

C

, (AMPERES)

(ns)

t

f

t

r

, t

r

d(on)

10

2

t

d(off)

t

r

10

(ns)

f

, t

d(off)

3

VCC = 600V

SWITCHING TIME, t

GE

I

t

f

= 600A

C

T

= 125°C

j

SWITCHING TIME, t

V

= ±15V

Inductive Load

10

1

10

3

10

-1

0

10

GATE RESISTANCE, R

10

G

1

, (Ω)

10

10

2

2

6 11/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DY-24S
Dual IGBT S-Series Module

600 Amperes/1200 Volts

3

10

(ns)

r

, t

d(on)

2

10

SWITCHING TIME, t

1

10

-1

10

REVERSE RECOVERY CHARACTERISTICS

3

10

(ns)

rr

(A), t

rr

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

t

d(on)

t

r

t

d(off)

VCC = 600V
V

t

f

GE

I

= 600A

C

T

= 150°C

j

Inductive Load

0

10

GATE RESISTANCE, RG, (Ω)

10

1

(TYPICAL)

= ±15V

10

4

10

(ns)

f

, t

d(off)

3

10

SWITCHING TIME, t

2

10

2

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

3

10

(ns)

rr

(A), t

rr

2

10

VCC = 600V
V
R
T
Inductive Load

REVERSE RECOVERY, I

1

10

10

1

EMITTER CURRENT, IE, (AMPERES)

10

2

GATE CHARGE VS. V

20

VCC = 600V
I

= 600A

C

T

= 25°C

15

, (VOLTS)

GE

j

= ±15V

GE

= 0Ω

G

= 125°C

j

I

rr

t

rr

GE

10

3

2

10

REVERSE RECOVERY, I

1

10

1

10

EMITTER CURRENT, IE, (AMPERES)

10

VCC = 600V
V

GE

R

G

T

= 150°C

j

Inductive Load

2

= ±15V

= 0Ω

I

rr

t

rr

10

10

5

GATE-EMITTER VOLTAGE, V

3

0

0

400 1200 1600800 2000

GATE CHARGE, QG, (nC)

711/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DY-24S
Dual IGBT S-Series Module

600 Amperes/1200 Volts

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

, (mJ/PULSE)

rr

, (mJ/PULSE)

off

, E

on

1

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

3

, (mJ)

, (mJ)

off

, E

on

10

rr

10

2

V

= 600V

CC

V

= ±15V

GE

I

= 600A

C/IE

T

= 125°C

j

E

on

E

off

E

rr

10

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

, (mJ/PULSE)

rr

, (mJ/PULSE)

off

, E

on

1

= 600V

V

CC

V

= ±15V

GE

R

= 0Ω

G

T

= 125°C

j

E

on

E

off

E

rr

2

10

3

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

10

2

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

E

on

E

off

E

rr

10

3

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

3

, (mJ)

, (mJ)

off

, E

on

10

rr

10

2

V

= 600V

CC

V

= ±15V

GE

I

= 600A

C/IE

T

= 150°C

j

E

on

E

off

E

rr

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

1

10

-1

10

GATE RESISTANCE, RG, (Ω)

8 11/12 Rev. 0

10

0

10

1

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

1

10

-1

10

GATE RESISTANCE, RG, (Ω)

10

0

10

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DY-24S
Dual IGBT S-Series Module

600 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(MAXIMUM)

0

th(j-c')

10

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

-2

10

• (NORMALIZED VALUE)

th

= R

th

Z

th(j-c)

37 K/kW
(IGBT)
R

=

th(j-c)

60 K/kW
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10-510-410-310-210-110010

TIME, (s)

1

911/12 Rev. 0