Powerex CM600DXL-34SA Data Sheet

CM600DXL-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A
D

AX

E

H

DETAIL “C & D”

AE

B

DETAIL “B”

Es2

Cs2

(13)G2(12)

(11)

HH

DETAIL “A”

NC(10)

NC(9)

C2E1 (8)

C2E1 (7)

G

10

H

U

9

8
7

X

W

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

The tolerance of size between
terminals is assumed to ±0.4

T

Z

Y

V

P

AK

AG

E B

AH

AJ

AQ

AM

H

AL

AZ

C

11

M N

RQ

AF

C1(1)

C1(2)

E2(3)

E2(4)

AU

F

AD

L

1

P

2

S

3

P

4

G H

AC

AG

Es1

TH2

(18)G1(17)

(16)

Tr1 Tr2

Di1 Di2

NC

(5)NC(6)

G J J K J

18

17 16 15 14 13 12 11

AB (6 PLACES)

AA (4 PLACES)

5 6

TH1

Cs1

Th

(15)

(14)

NTC

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0
B 4.79 121.7
C 0.81 20.5
D 5.39 137.0
E 4.33±0.02 110.0±0.5
F 0.53 13.5
G 0.81±0.012 20.5±0.3
H 0.15 3.81
J 0.6 15.24
K 0.74±0.012 19.05±0.3
L 0.75 19.24
M 0.3 7.75
N 0.42 10.74
P 0.86 22.0
Q 3.72±0.012 94.5±0.3
R 3.48 88.53
S 1.08 27.53
T 1.62 41.22
U 1.95 49.72
V 1.53 39.0
W 0.47 12.0
X 0.31 8.0
Y 0.26 6.5
Z 0.61 15.64
AA Dia. 5.5 Dia.

Dimensions Inches Millimeters

AB M6 Metric M6
AC 0.6 15.14
AD 0.14 3.6
AE 4.16±0.012 105.9±0.3
AF 0.55 14.0
AG 0.27 7.0
AH 0.14 3.5
AJ 0.67+0.04/-0.02 17.0+1.0/-0.5
AK 0.12 3.0
AL 0.04 1.15
AM 0.02 0.65
AN 0.05 1.2
AP 0.18 4.5
AQ 0.5 12.5
AR 0.18 Dia. 4.5 Dia.
AS 0.10 Dia. 2.6 Dia.
AT 0.09 Dia. 2.25 Dia.
AU 0.45±0.012 11.36±0.3
AV 0.36±0.012 9.15±0.3
AW 0.46±0.012 11.8±0.3
AX 4.18±0.012 106.3±0.3
AY 0.017±0.012 0.45±0.3
AZ 0.51 13.0
BA 0.54 13.7
BB 0.53±0.012 11.35±0.3

AK

DETAIL “A”

DETAIL “B”

BA

M

DETAIL “C”

AW

AU

AV

DETAIL “D”

Dual IGBT
NX-Series Module

600 Amperes/1700 Volts

AR
AS

AT

AP

AN

Description:

Powerex IGBT Modules are
designed for use in switching

45°

M

BA

AY

BB

G

10

H

9

applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM600DXL-34SA is a 1700V
(V

), 600 Ampere Dual

CES

IGBT Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 600 34

V

CES

106/13 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DXL-34SA
Dual IGBT NX-Series Module

600 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*4

IC 600 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse, Repetitive)*3 I

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature, Instantaneous Event (Overload) T

Maximum Case Temperature*4 T

Operating Junction Temperature, Continous Operation (Under switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

18.5

29.5

30.5

43.6

44.6

70.8

71.8

84.9

85.9

0

24.2

0

Tr1

Di1

Tr2

Di2

1700 Volts

CES

±20 Volts

GES

1200 Amperes

CRM

5760 Watts

tot

*1

600 Amperes

E

*1

1200 Amperes

ERM

4000 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

45.1

47.2

71.0

92.1

0

Th

Tr1

Tr1

Di1

Tr2Tr2

Di2

Tr1

Di1

Di1

Tr2

Tr2

Di2

Di2

27.0

41.1

70.2

84.3

0

27.6

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

48.7

74.5

95.8

2 06/13 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DXL-34SA
Dual IGBT NX-Series Module

600 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 600A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts

IC = 600A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 600A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts

IC = 600A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 600A, VGE = 15V — 3310 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 600A, VGE = ±15V, — — 150 ns

Turn-off Delay Time t

Fall Time tf — — 400 ns

Emitter-Collector Voltage V

(Terminal) IE = 600A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts

IE = 600A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts

Emitter-Collector Voltage V

(Chip) IE = 600A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts

IE = 600A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 600A, VGE = ±15V — 167 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 2.4 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 60mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 600A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts

CE(sat)

IC = 600A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts

CE(sat)

— — 158 nF

ies

VCE = 10V, VGE = 0V — — 13 nF

oes

— — 2.9 nF

res

— — 900 ns

d(on)

RG = 0Ω, Inductive Load — — 900 ns

d(off)

*1

IE = 600A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts

EC

*1

IE = 600A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts

EC

*1

VCC = 1000V, IE = 600A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 23 — µC

rr

RG = 0Ω, Tj = 150°C — 168 — mJ

off

*1

Inductive Load — 106 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 0.6 mΩ

0

18.5

29.5

30.5

43.6

44.6

70.8

71.8

84.9

85.9

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

*4

0

24.2

45.1

47.2

71.0

92.1

0

Th

Tr1

Tr1

Tr1

Di1

Di1

Tr2

Tr2Tr2

Di2

Di2

Tr1

Di1

Di1

Tr2

Tr2

Di2

Di2

27.0

41.1

70.2

84.3

0

27.6

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

48.7

74.5

95.8

306/13 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DXL-34SA
Dual IGBT NX-Series Module

600 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*4 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*6 — 3375 — K

(25/50)

= 493Ω*4 -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*4 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance, R

Case to Heatsink Per 1 Module

Q Per Inverter IGBT*4 — — 26 K/kW

th(j-c)

D Per Inverter FWDi*4 — — 39 K/kW

th(j-c)

Thermal Grease Applied, — 7 — K/kW

th(c-f)

*4,*7

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 22.5 — — mm

Terminal to Baseplate 16.8 — — mm

Clearance da Terminal to Terminal 15.5 — — mm

Terminal to Baseplate 11.3 — — mm

Weight m — 690 — Grams

Flatness of Baseplate ec On Centerline X, Y*8 ±0 — +100 µm

Recommended Operating Conditons, Ta = 25°C

DC Supply Voltage VCC Applied Across C1-E2 Terminals — 1000 1200 Volts

Gate-Emitter Drive Voltage V

G1-Es1/G2-Es2 Terminals

External Gate Resistance RG Per Switch 0 — 13 Ω

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

*6 B

(25/50)

R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

4 06/13 Rev. 1

= In(

R

25

)/( 1 –

50 T25 T50

MOUNTING SIDE

LABEL SIDE

1

)

+ : CONVEX

– : CONCAVE

X

Y

MOUNTING SIDE

– : CONCAVE

+ : CONVEX

Applied Across 13.5 15.0 16.5 Volts

GE(on)

0

24.2

45.1

47.2

71.0

92.1

0

27.0

41.1

70.2

84.3

18.5

29.5

30.5

43.6

44.6

70.8

71.8

84.9

85.9

0

Th

Tr1

Tr1

Di1

Di1

Tr2

Tr2Tr2

Di2

Di2

0

27.6

48.7

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

Tr1

Tr1

Di1

Di1

Tr2

Tr2

Di2

Di2

74.5

95.8

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DXL-34SA
Dual IGBT NX-Series Module

600 Amperes/1700 Volts

OUTPUT CHARACTERISTICS

(TYPICAL)

1200

VGE = 20V

1000

800

, (AMPERES)

C

600

15

11

10

400

9

200

COLLECTOR CURRENT, I

8

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

8

, (VOLTS)

IC = 1200A

Tj = 25°C

(Chip)

Tj = 25°CTj = 25°C

(Chip)

SATURATION VOLTAGE CHARACTERISTICS

4.5

Tj = 25°C
T
T

(Chip)

, (VOLTS)

CE(sat)

4.0

3.5

3.0

2.5

2.0

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

FORWARD CHARACTERISTICS

4

10

Tj = 25°C
T
T

(Chip)

COLLECTOR-EMITTER

(TYPICAL)

= 125°C

j

= 150°C

j

FREE-WHEEL DIODE

(TYPICAL)

= 125°C

j

= 150°C

j

1200600 800 1000200 400

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

6 8 10 1412 16 18 20

COLLECTOR CURRENT, I

IC = 600A

IC = 360A

, (AMPERES)

C

, (AMPERES)

E

3

10

EMITTER CURRENT, I

2

10

0 1 3 652 4

EMITTER-COLLECTOR VOLTAGE, V

, (VOLTS)

EC

506/13 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DXL-34SA
Dual IGBT NX-Series Module

600 Amperes/1700 Volts

3

10

, (nF)

10

res

, C

oes

, C

ies

10

10

CAPACITANCE, C

10

VGE = 0V

2

1

0

-1

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING CHARACTERISTICS

4

10

3

10

CAPACITANCE VS. V

(TYPICAL)

0

10

10

HALF-BRIDGE

(TYPICAL)

t

d(off)

t

d(on)

1

CE

C

C

C

ies

oes

res

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL)

4

10

t

10

3

10

2

10

SWITCHING TIME, (ns)

10

2

VCC = 1000V
V

GE

R

G

T

= 125°C

j

Inductive Load

1

1

10

t

d(on)

= ±15V

= 0Ω

COLLECTOR CURRENT, I

10

d(off)

2

, (AMPERES)

C

t

f

t

r

3

10

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

3

10

VCC = 1000V
V

= ±15V

GE

I

= 600A

C

T

= 125°C

j

Inductive Load

t

f

10

2

t

d(on)

t

d(off)

t

2

10

10

1

10

VCC = 1000V
V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

Inductive Load

1

COLLECTOR CURRENT, I

10

2

, (AMPERES)

C

SWITCHING TIME, (ns)

6 06/13 Rev. 1

r

SWITCHING TIME, (ns)

1

10

0 5 10

EXTERNAL GATE RESISTANCE, R

10

2

G

, (Ω)

t

r

t

f

15

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DXL-34SA
Dual IGBT NX-Series Module

600 Amperes/1700 Volts

SWITCHING TIME VS.

GATE RESISTANCE

3

10

VCC = 1000V
V

= ±15V

GE

I

= 600A

C

T

= 150°C

j

Inductive Load

2

10

SWITCHING TIME, (ns)

1

10

0 5 10

EXTERNAL GATE RESISTANCE, R

REVERSE RECOVERY CHARACTERISTICS

3

10

(ns)

rr

(A), t

rr

2

10

REVERSE RECOVERY, I

1

10

1

10

EMITTER CURRENT, I

(TYPICAL)

t

d(on)

t

d(off)

(TYPICAL)

2

10

G

VCC = 1000V
V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

Inductive Load

I
t

, (AMPERES)

E

, (Ω)

rr

rr

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

3

10

(ns)

rr

(A), t

rr

2

10

t

r

t

f

VCC = 1000V
V

= ±15V

GE

R

= 0Ω

G

T

= 125°C

j

Inductive Load

15

REVERSE RECOVERY, I

1

10

1

10

EMITTER CURRENT, IE, (AMPERES)

GATE CHARGE VS. V

2

10

(TYPICAL)

GE

I

rr

t

rr

3

10

20

IC = 600A
V

= 1000V

CC

16

, (VOLTS)

GE

12

8

4

GATE-EMITTER VOLTAGE, V

10

3

0

1000 50003000 40002000

0

GATE CHARGE, QG, (nC)

706/13 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DXL-34SA
Dual IGBT NX-Series Module

600 Amperes/1700 Volts

HALF-BRIDGE SWITCHING

CHARACTERISTICS

4

10

VCC = 1000V
V

= ±15V

GE

R

= 0Ω

, (mJ)

off

, E

10

on

10

SWITCHING ENERGY, E

10

G

T

= 125°C

j

Inductive Load

3

2

1

1

10

COLLECTOR CURRENT, IC, (AMPERES)

E

on

E

off

E

rr

EMITTER CURRENT, I

HALF-BRIDGE SWITCHING

CHARACTERISTICS

3

10

(TYPICAL)

2

10

(TYPICAL)

, (AMPERES)

E

10

10

3

10

4

VCC = 1000V
V

10

10

10

10

3

2

1

10

3

R
T
Inductive Load

1

, (mJ)

rr

, (mJ)

off

, E

on

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

10

10

10

3

2

1

0

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(TYPICAL)

= ±15V

GE

= 0Ω

G

= 150°C

j

E

on

E

off

E

rr

2

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, I

, (AMPERES)

E

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(TYPICAL)

10

3

10

, (mJ)

rr

2

10

1

10

REVERSE RECOVERY ENERGY, E

0

10

3

, (mJ)

rr

, (mJ)

off

, E

on

2

10

VCC = 1000V
V

= ±15V

GE

I

= 600A

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

10

C

T

= 125°C

j

Inductive Load

1

0 105

GATE RESISTANCE, RG, (Ω)

, (mJ)

rr

, (mJ)

off

, E

on

2

10

VCC = 1000V
V

= ±15V

E

on

E

off

E

rr

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

10

GE

I

= 600A

C

T

= 150°C

j

Inductive Load

1

15 0 105 15

GATE RESISTANCE, RG, (Ω)

E

on

E

off

E

rr

8 06/13 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM600DXL-34SA
Dual IGBT NX-Series Module

600 Amperes/1700 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(MAXIMUM)

th(j-c')

10

0

10

2

TEMPERATURE CHARACTERISTICS

(NTC THERMISTER PART - TYPICAL)

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

• (NORMALIZED VALUE)

-2

10

th

= R

th

Z

th(j-c)

26 K/kW
(IGBT)
R

=

th(j-c)

39 K/kW
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

-5

10

-3

-4

10

10-210-110010

TIME, (s)

1

10

0

RESISTANCE, (kΩ)

10

-1

1

10

-50 0-25 25 50 75 125100

TEMPERATURE, (°C)

906/13 Rev. 1