Powerex CM600DU-12NFH Data Sheet

CM600DU-12NFH

H

H

V

V

V

V

G2E2E1G1

C2E1 C1

TC MEASUREMENT POINT

R

X

B

W

E

U

Y

A

D

PQQ

Z
K

G

Z

Z

C

F

M

M M

L

L

G

S - NUTS (3 TYP)

T - (4 TYP)

LABEL

C2E1

E2

C1

E1
G1

E2

G2

K

K

J

E2

N

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

Dual IGBTMOD™
NFH-Series Module

600 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0

B 3.15 80.0

C 1.14+0.04/-0.01 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 2.44±0.01 62.0±0.25

F 0.83 21.2

G 0.28 7.0

H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

L 0.35 9.0

M 0.33 8.5

08/10 Rev. 1

Dimensions Inches Millimeters

N 0.69 17.5

P 0.85 21.5

Q 0.98 25.0

R 0.86 21.75

S M6 Metric M6

T 0.26 Dia. 6.5 Dia.

U 0.4 10.0

V 0.02 0.5

W 0.87 22.2

X 0.72 18.25

Y 0.36 9.25

Z 0.71 18.0

connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low V
£ Low E

CE(sat)

SW(off)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Power Supplies
£ Induction Heating
£ Welders

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM600DU-12NFH is a 600V
(V

), 600 Ampere Dual

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 600 12

V

CES

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

00

Dimensions in mm (Tolerance: ±1mm)

IGBT FWDi

Chip Location (Top View)

29.4

44.2

77.2

29.4

44.2

64.8

32.0

44.4

27.3

42.1

0 0

Tr

2

Tr

2

Di

2

Di

2

Tr

1

Tr

1

Di

1

Di

1

G2E2E1G1

C2E1 C1E2

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM600DU-12NFH Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (Operation) IC 600* Amperes

Collector Current (Operation) I

Peak Collector Current (Pulse) ICM 1200* Amperes

Emitter Current** (Operation) IE 600* Amperes

Emitter Current** (Operation) I

Peak Emitter Current (Pulse)** IEM 1200* Amperes

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts

Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 2350 Watts

Mounting Torque, M6 Main Terminal — 40 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 580 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

–40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

400* A

C(rms)

400* A

E(rms)

2500 Volts

ISO

rating.

j(max)

(rms)

(rms)

2 08/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate-Emitter Threshold Voltage V

Gate Leakage Current I

Collector-Emitter Saturation Voltage V

I

Total Gate Charge QG VCC = 300V, IC = 600A, VGE = 15V — 3720 — nC

Emitter-Collector Voltage* VEC I

V

CES

I

GE(th)

V

GES

IC = 600A, VGE = 15V, Tj = 25°C — 2.0 2.7 Volts

CE(sat)

C

= V

CE

= 60mA, VCE = 10V 5.0 6.0 7.0 Volts

C

GE

= 600A, VGE = 15V, Tj = 125°C — 1.95 — Volts

= 600A, VGE = 0V — — 2.6 Volts

E

, VGE = 0V — — 1.0 mA

CES

= V

, VCE = 0V — — 0.5 µA

GES

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr V

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf Inductive Load Switching Operation, — — 150 ns

Diode Reverse Recovery Time* trr I

Diode Reverse Recovery Charge* Qrr — 11 — µC

— — 166 nf

ies

V

oes

— — 6.0 nf

res

— — 650 ns

d(on)

V

d(off)

= 10V, VGE = 0V — — 11 nf

CE

= 300V, IC = 600A, — — 250 ns

CC

= V

GE1

= 15V, RG = 2Ω, — — 800 ns

GE2

= 600A — — 200 ns

E

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Contact Thermal Resistance R

Thermal Resistance, Junction to Case** R

Thermal Resistance, Junction to Case** R

External Gate Resistance RG 2.1 — 10 Ω

*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**Pulse width and repetition rate should be such as to cause neglible temperature rise.

Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W

th(j-c)

D Per FWDi 1/2 Module, TC Reference — — 0.124 °C/W

th(j-c)

Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W

th(c-f)

'Q Per IGBT 1/2 Module, Tj ≤ 150°C — — 0.053 °C/W

th(j-c)

'D Per FWDi 1/2 Module, Tj ≤ 150°C — — 0.078 °C/W

th(j-c)

308/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

3

10

2

10

1

10

0

10

1

0 0.5 1.5 2.0 2.51.0 3.0

10

1

EMITTER-COLLECTOR VOLTAGE, V

EC

, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

3

10

2

10

4

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

0 642 8 10 1412 16 18 20

4

3

2

1

0

Tj = 25°C

Tj = 25°C
T

j

= 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 1200A

IC = 600A

IC = 240A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 1 2 3 4 5

200

0

VGE = 20V

8

8.5

9.5

10

9

15

7.5

7

Tj = 25°C

400

600

1200

800

1000

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

3.0

2.0

1.5

1.0

0

200

600

2.5

0.5

0

1200800 1000

VGE = 15V

Tj = 25°C
T

j

= 125°C

400

10

-1

11

13

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

1

10

3

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

t

f

VCC = 300V
V

GE

= 15V

R

G

= 2.0Ω

T

j

= 125°C

Inductive Load

SWITCHING TIME, (ns)

GATE RESISTANCE, RG, (Ω)

10

4

10

-1

10

0

10

1

10

3

10

2

10

2

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

t

f

VCC = 300V
V

GE

= ±15V

I

C

= 600A

T

j

= 125°C

Inductive Load

SWITCHING TIME, (ns)

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

1000 2000 3000 4000 5000

VCC = 300V

VCC = 200V

IC = 600A

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY, I

rr

, (AMPERES), t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

VCC = 300V
V

GE

= ±15V

R

G

= 2.0Ω

T

j

= 25°C

Inductive Load

I

rr

t

rr

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

4 08/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 300V
V

GE

= ±15V

R

G

= 2.0Ω

T

j

= 25°C

Inductive Load

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT

(TYPICAL)

E

SW(on)

E

SW(off)

GATE RESISTANCE, R

G

, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

-1

10

0

10

1

10

1

10

0

VCC = 300V
V

GE

= ±15V

I

C

= 600A

T

j

= 125°C

Inductive Load

10

2

SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

E

SW(on)

E

SW(off)

EMITTER CURRENT, I

E

, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 300V
V

GE

= ±15V

R

G

= 2.0Ω

T

j

= 25°C

Inductive Load

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

E

rr

GATE RESISTANCE, RG, (Ω)

REVERSE RECOVERY

SWITCHING LOSS, E

rr

, (mJ/PULSE)

10

2

10

-1

10

0

10

1

10

1

10

0

VCC = 300V
V

GE

= ±15V

I

C

= 600A

T

j

= 125°C

Inductive Load

10

2

REVERSE RECOVERY SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

E

rr

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10

-3

10

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
T

C

= 25°C
Per Unit Base =
R

th(j-c)

=

0.11°C/W
(IGBT)
R

th(j-c)

=

0.12°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

CM600DU-12NFH
Dual IGBTMOD™ NFH-Series Module

600 Amperes/600 Volts

508/10 Rev. 1