POWEREX CM50TJ-24F Datasheet

CM50TJ-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A
D

F

19

20

Tc

J

B

21

L

C

21

1

2

3

4

20

19

S

2

1

P

E

G

NOT

CONNECTED

17

T

4

3

5

6

7

Q

Y
X

5
6

7

8

17 15

CONNECTED

1618

8

10

11

12

NOT

9

9

H

15

14

M

N

13

10

12

11

R

13

14

U

K

Tc

L

W

V

Trench Gate Design
Six IGBTMOD™

50 Amperes/ 1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse­connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.78 121.5
B 2.42 61.5
C 0.67 17.0
D 4.33±0.01 110.0±0.25
E 3.00 76.2
F 0.75 19.05
G 0.60 15.24
H 0.15 3.81

J 2.26 57.5
K 1.97±0.01 50.0±0.25
L 1.07 27.0

Dimensions Inches Millimeters

M 0.15 3.81
N 0.75 19.05
P 0.15 3.81
Q 3.00 76.2
R 0.60 15.24
S 0.45 1.15

T 0.04 1.0
U 0.22 Dia. 5.5 Dia.
V 0.12 3.0
W 0.81 20.5
X 3.72 94.5
Y 4.62 118.11

Applications:

□ AC Motor Control
□ UPS
□ Battery Powered Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM50TJ-24F is a
1200V (V

), 50 Ampere Six-

CES

IGBT IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 50 24

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM50TJ-24F
Trench Gate Design Six IGBTMOD™

50 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM50TJ-24F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current (Tc = 25°C)** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts

50 Amperes

100* Amperes

50 Amperes

100* Amperes

219 Watts
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 300 Grams
Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) V

iso

2500 Volts

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

Total Gate Charge Q
Emitter-Collector Voltage** V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CES
GES

GE(th)

CE(sat)

G

EC

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 20 µA

GES

IC = 5mA, VCE = 10V 5 6 7 Volts

IC = 50A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts

IC = 50A, VGE = 15V, Tj = 125°C– 1.9 – Volts

VCC = 600V, IC = 50A, VGE = 15V – 550 – nC

IE = 50A, VGE = 0V – – 3.3 Volts

rating.

j(max)

2

2