POWEREX CM50TF-24H Datasheet
CM50TF-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
X
Z - M4 THD
(7 TYP.)
BuPEuPBvPEv PBwPEwP
uNEuNBvNEvNBwNEwN
B
N
W
AA
.110 TAB
H
u
P
N
L
BvP
BvN
D
P
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.02±0.02 102.0±0.5
B 3.58±0.02 91.0±0.5
C 3.15±0.01 80.0±0.25
D 2.913±0.01 74.0±0.25
E 1.69 43.0
F 1.18 +0.06/-0.02 30 +1.5/-0.5
G 1.18 30.0
H 1.16 29.5
J 1.06 27.0
K 0.96 24.5
L 0.87 22.0
M 0.79 20.0
N 0.67 17.0
G
U
F
BuP
EuP
BuN
EuN
C
QXQ
UVW
M M
EvP
EvN
XN
v
Dimensions Inches Millimeters
P 0.65 16.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.32 8.1
W 0.24 Rad. Rad. 6.0
X 0.24 6.0
Y 0.22 Dia. Dia. 5.5
Z M4 Metric M4
AA 0.08 2.0
AB 0.28 7.0
AA
S
P
P
G
N
R
T
L
V
BwP
EwP
BwN
EwN
J
K
Y DIA. (4 TYP.)
AB
w
B
E
Six-IGBT IGBTMOD™
H-Series Module
50 Amperes/ 1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
P
N
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□ High Frequency Operation
(20-25kHz)
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-24H
is a 1200V (V
), 50 Ampere
CES
Six-IGBT IGBTMOD™ Power
Module.
Type Current Rating V
Amperes Volts (x 50)
CM 50 24
CES
335
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TF-24H
Six-IGBT IGBTMOD™ H-Series Module
50 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM50TF-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M4 Mounting Screws – 13 in-lb
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (Typical) – 540 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
50 Amperes
100* Amperes
50 Amperes
100* Amperes
400 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5
GES
IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 50A, VGE = 15V – 2.5 3.4** Volts
m
IC = 50A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 50A, VGS = 15V – 250 – nC
IE = 50A, VGS = 0V – – 3.4 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 3.5 nF
VCC = 600V, IC = 50A, – – 200 ns
V
= V
GE1
= 15V, RG = 6.3Ω – – 150 ns
GE2
IE = 50A, diE/dt = –100A/µs – – 250 ns
IE = 50A, diE/dt = –100A/µs – 0.37 –
–– 10nF
– – 2 nF
– – 80 ns
– – 350 ns
µ
C
A
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.033 °C/W
Per IGBT – – 0.31 °C/W
Per FWDi – – 0.70 °C/W
336
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