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CM50DU-24F
Datasheet
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POWEREX CM50DU-24F Datasheet

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CM50DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
P - NUTS (3 PLACES)
TC MEASURING
N
CM
C2E1 E2 C1
B
M
C
C2E1
POINT
A
D
K
RTC
K
E2
J
RTC
Q (2 PLACES)
E
E2 G2G1 E1
F
G
H
F
R
L
G2 E2
C1
E1 G1
Trench Gate Design Dual IGBTMOD™
50 Amperes/ 1200 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected super-fast recover y free-wheel diode. All components and inter­connects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
□ Low Drive Power □ Low V □ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
Dimensions Inches Millimeters
J 0.53 13.5 K 0.91 23.0 L 1.13 28.7
M 0.67 17.0 N 0.28 7.0
P M5 M5
Q 0.26 Dia. 6.5 Dia. R 0.16 4.0
Applications:
□ AC Motor Control □ UPS □ Battery Powered Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM50DU-24Fis a 1200V (V
), 50 Ampere Dual
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 50 24
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50DU-24F Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM50DU-24F Units
Junction Temperature T Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current I Emitter Current** (Tc = 25°C) I Peak Emitter Current** I Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P
j
stg CES GES
C
CM
E
EM
c
-40 to 150 °C
-40 to 125 °C 1200 Volts
±20 Volts
50 Amperes
100* Amperes
50 Amperes
100* Amperes
320 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Isolation Voltage (Main Ter minal to Baseplate, AC 1 min.) V
iso
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Voltage I Gate-Emitter Threshold V oltage V Collector-Emitter Saturation Voltage V
Total Gate Charge Q Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES GES
GE(th)
CE(sat)
G
EC
VCE = V VGE = V
, VGE = 0V ––1mA
CES
, VCE = 0V ––20 µA
GES
IC = 5mA, VCE = 10V 5 6 7 Volts
IC = 50A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts
IC = 50A, VGE = 15V, Tj = 125°C – 1.9 – Volts
VCC = 600V, IC = 50A, VGE = 15V – 550 – nC
IE = 50A, VGE = 0V ––3.2 Volts
rating.
j(max)
2
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50DU-24F Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Inductive Turn-on Delay Time t
d(on)
Load Rise Time t Switch Turn-off Delay Time t
d(off)
Times Fall Time t Diode Reverse Recovery Time** t Diode Reverse Recovery Charge** Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V ––0.85 nf
VCC = 600V, IC = 50A, ––100 ns
V
= V
GE1
= 15V, ––50 ns
GE2
RG = 6.3⍀, ––300 ns
Inductive Load ––300 ns
Switching Operation ––150 ns
IE = 50A – 2.1 – µC
––20 nf
––0.5 nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Q Per IGBT 1/2 Module, Tc Reference – 0.39 °C/W
th(j-c)
Point per Outline Drawing
D Per FWDi 1/2 Module, Tc Reference ––0.70 °C/W
th(j-c)
Point per Outline Drawing
'Q Per IGBT 1/2 Module, – 0.26 °C/W
th(j-c)
Tc Reference Point Under Chip
th(c-f)
Per Module, Thermal Grease Applied – 0.035 – °C/W
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50DU-24F Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
100
Tj = 25
80
, (AMPERES)
C
60
40
20
COLLECTOR CURRENT, I
0
012 34
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FORWARD CHARACTERISTICS
2
10
11
o
15
C
VGE = 20V
8.5
8
FREE-WHEEL DIODE
(TYPICAL)
10
9.5
9
Tj = 25°C
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
0 1.0 2.0 3.0 4.0
EMITTER-COLLECTOR VOLTAGE, V
REVERSE RECOVERY CHARACTERISTICS
2
10
, (ns)
rr
1
10
VCC = 600V V
GE
R
= 6.3 Ω
G
REVERSE RECOVERY TIME, t
T
= 25°C
j
Inductive Load
0
10
0
10
(TYPICAL)
= ±15V
1
EMITTER CURRENT, IE, (AMPERES)
10
, (VOLTS)
EC
t
rr
I
rr
SATURATION VOLTAGE CHARACTERISTICS
3
)
, (VOLTS
2
CE(sat)
1
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
0
2
10
, (nF)
res
1
, C
10
oes
, C
ies
0
10
CAPACITANCE, C
-1
10
10
2
10
20
16
, (AMPERES)
, (VOLTS)
rr
GE
12
1
10
8
4
GATE-EMITTER VOLTAGE, V
0
REVERSE RECOVERY CURRENT, I
10
2
10
0
COLLECTOR-EMITTER
(TYPICAL)
VGE = 15V
Tj = 25°C T
= 125°C
j
020406080
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
VGE = 0V
-1 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
10
GATE CHARGE, V
CE
C
ies
C
oes
C
res
1
10
GE
IC = 50A
VCC = 400V
VCC = 600V
0 200
400 800
GATE CHARGE, QG, (nC)
600
SATURATION VOLTAGE CHARACTERISTICS
COLLECTOR-EMITTER
5
Tj = 25°C
4
, (VOLTS)
CE(sat)
3
IC = 100A
IC = 50A
2
IC = 20A
COLLECTOR-EMITTER
1
SATURATION VOLTAGE, V
0
100
10
2
068 1210 181614 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
SWITCHING CHARACTERISTICS
3
10
VCC = 600V V
= ±15V
GE
R
= 6.3 Ω
G
T
= 125°C
j
2
Inductive Load
10
1
10
SWITCHING TIME, (ns)
0
10
0
10
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10-310
1
th(j-c)
10
0
10
-1
10
• (NORMALIZED VALUE)
th
-2
10
= R
th
Z
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-2
Per Unit Base R
= 0.39°C/W (IGBT)
th(j-c)
R
= 0.7°C/W (FWDi)
th(j-c)
Single Pulse T
= 25°C
C
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
1
10
(IGBT & FWDi)
-1
10
-5
10
TIME, (s)
t
f
t
d(off)
t
d(on)
t
r
2
10
0
10
-4
10
1
10
-1
10
-2
10
-3
10
-3
10
4
4
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