POWEREX CM50BU-24H Datasheet
CM50BU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
EEHR
GuP
EuP
GuN
EuN
GvP
EvP
U
C
D
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 2.83 72.0
B 2.17±0.01 55±0.25
C 3.58 91.0
D 2.91±0.01 74.0±0.25
E 0.43 11.0
F 0.79 20.0
G 0.69 17.5
H 0.75 19.1
J 0.39 10.0
K 0.41 10.5
L 0.05 1.25
GuP
EuP
TC
Measured
Point
4 - M4 NUTS
P
N
A
B
U
V
J
J
EH
VW
V
X
GF
GuN
EuN
K
GF
GvP
EvP
V
GvN
EvN
Dimensions Inches Millimeters
M 0.74 18.7
N 0.02 0.5
P 1.55 39.3
Q 0.63 16.0
R 0.57 14.4
S 0.22 Dia. 5.5 Dia.
T 0.32 8.1
U 1.02 26.0
V 0.59 15.0
W 0.20 5.0
X 1.61 41.0
GvN
EvN
N
T
U
S 4 - Mounting
Holes
Measured
T
C
Point
0.110 - 0.5 Tab
L
M
P
Q
L
Four IGBTMOD™
U-Series Module
50 Amperes/ 1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of four IGBT Transistors in an
H-Bridge configuration, with each
transistor having a reverse-connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50BU-24H is a
1200V (V
IGBT IGBTMOD™ Power Module.
Type Amperes Volts (x 50)
CM 50 24
CE(sat)
Free-Wheel Diode
Heat Sinking
), 50 Ampere Four-
CES
Current Rating V
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50BU-24H
Four IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM50BU-24H Units
Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M4 Main Terminal – 15 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 390 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
50 Amperes
100* Amperes
50 Amperes
100* Amperes
400 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 5.0mA, VCE = 10V 4.5 6 7.5 Volts
IC = 50A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 50A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 600V, IC = 50A, VGE = 15V – 187 – nC
IE = 50A, VGE = 0V – – 3.2 Volts
rating.
j(max)
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V – – 2.6 nf
VCC = 600V, IC = 50A, – – 80 ns
V
= V
GE1
= 15V, – – 200 ns
GE2
RG = 6.3V, Resistive – – 150 ns
Load Switching Operation – – 350 ns
IE = 50A, diE/dt = -100A/µs – – 300 ns
IE = 50A, diE/dt = -100A/µs – 0.28 – µC
– – 7.5 nf
– – 1.5 nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
2
2
Q Per IGBT 1/4 Module – – 0.31 °C/W
th(j-c)
D Per FWDi 1/4 Module – – 0.7 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.1 – °C/W
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