Powerex CM500HA-34A Data Sheet
CM500HA-34A
C
G
E
E
E
E
G
C
A
B
C
F
K
J
E
D
M
N
P
Q
R
S
U - THD.
(2 TYP.)
V -THD.
(2 TYP.)
W - DIA. (4 TYP.)
y
x
T
L
H G
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Single IGBTMOD™
A-Series Module
500 Amperes/1700 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of one IGBT Transistor in a single configuration with
a reverse connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 3.66±0.01 93.0±0.25
C 0.63 16.0
D 0.30 7.5
E 0.69 17.5
F 1.14 29.0
G 0.79 20.0
H 0.94 24.0
J 0.31 7.9
K 0.24 6.0
L 2.44 62.0
M 1.89±0.01 48.0±0.25
Dimensions Inches Millimeters
N 0.39 10.0
P 0.39 10.0
Q 0.51 13.0
R 0.33 8.5
S 1.42+0.04/-0.02 36.0+1.0/-0.5
T 1.02+0.04/-0.02 25.8+1.0/-0.5
U M6 Metric M6
V M4 Metric M4
W 0.256 6.5
X 0.79 20.0
Y 0.35 9.0
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ DC Chopper
£ Inverter
£ UPS
£ Forklift
Ordering Information:
Example: Select the complete
part module number you
desire from the table below -i.e.
CM500HA-34A is a 1700V (V
CES
500 Ampere Single
IGBTMOD™ Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 500 34
V
CES
),
102/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM500HA-34A
Single IGBTMOD™ A-Series Module
500 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol CM500HA-34A Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (DC, TC = 110°C)*4 I
Peak Collector Current (Pulse, Repetitive)*2 I
Emitter Current (DC, TC = 25°C)*4 I
Peak Emitter Current (Pulse, Repetitive)*2 I
Maximum Collector Dissipation (TC = 25°C)*2,*4 P
Mounting Torque, M6 Main Terminal — 26 in-lb
Mounting Torque, M6 Mounting — 26 in-lb
Mounting Torque, M4 G(E) Terminal — 13 in-lb
Weight — 480 Grams
Isolation Voltage (Main Terminal to Baseplate, f = 60Hz, AC 1 min.) V
–40 to 125 °C
stg
1700 Volts
CES
±20 Volts
GES
500 Amperes
C
1000 Amperes
CM
*1 500 Amperes
E
*1 1000 Amperes
EM
5000 Watts
C
3500 Volts
ISO
Static Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
I
V
CES
V
GES
I
GE(th)
IC = 500A, VGE = 15V, Tj = 25°C*3 — 2.3 3.0 Volts
CE(sat)
C
= V
CE
GE
= 50mA, VCE = 10V 5.5 7.0 8.5 Volts
C
, VGE = 0V — — 1.0 mA
CES
= V
, VCE = 0V — — 3.0 µA
GES
= 500A, VGE = 15V, Tj = 125°C*3 — 2.45 — Volts
Total Gate Charge QG VCC = 1000V, IC = 500A, VGE = 15V — 3300 — nC
Emitter-Collector Voltage*1 V
I
EC
= 500A, VGE = 0V*3 — — 3.2 Volts
E
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr V
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load — — 250 ns
Diode Reverse Recovery Time*1 t
Diode Reverse Recovery Charge*1 Q
*1 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
— — 120 nf
ies
V
oes
— — 2.6 nf
res
— — 900 ns
d(on)
V
d(off)
Switching Operation, — — 650 ns
rr
I
rr
GE1
= 10V, VGE = 0V — — 14 nf
CE
= 1000V, IC = 500A, — — 500 ns
CC
= V
= 15V, RG = 3.0Ω, — — 1200 ns
GE2
= 500A — 50 — µC
E
rating.
j(max)
2 02/10 Rev. 1
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