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CM450DY-24T
Data Sheet
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Powerex CM450DY-24T Data Sheet

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<IGBT Modules>
Publication Date : February 2017
CMH-11294
Ver.1.0
Collector current IC .............…..................…
4 5
A
Collector-emitter voltage V
CES
..................
1 2 0
V
Maximum junction temperature T
vjmax
.........
1 7
°C
●Flat base type
●Copper base plate (Nickel-plating)
●Tin-plating signal terminals
●RoHS Directive compliant
dual switch (half-bridge)
●UL Recognized under UL1557, File No.E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OPTION (Below options are available.)
●PC-TIM (Phase Change Thermal Interface Material) pre-apply
●V
CEsat
selection for parallel connection
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Tolerance otherwise specified
E2
G1
E2
(Es2)
G2
Di1
Di2
C1
C2E1
E1
(Es1)
Tr2
Tr1
Division of Dimension
Tolerance
0.5
to 3
±0.2 over 3
to 6
±0.3
over 6
to 30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
JIS B 0405 c
CM450DY-24T
HIGH POWER SWITCHING USE INSULATED TYPE
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
CMH-11294
Ver.1.0
Symbol
Item
Conditions
Rating
Unit
V
CES
Collector-emitter voltage
G-E short-circuited
1200
V
V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
Collector current DC, TC=125 °C
(Note2, 4)
450
A
I
CRM
Pulse, Repetitive
(Note3)
900
P
tot
Total power dissipation
TC=25 °C
(Note2, 4)
4835
W
IE
(Note1)
Emitter current DC
(Note2)
450
A
I
ERM
(Note1)
Pulse, Repetitive
(Note3)
900
V
is o l
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
V
T
vjmax
Maximum junction temperature
Instantaneous event (overload)
175
°C
T
Cm a x
Maximum case temperature
(Note4)
125
T
vjop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
°C
T
st g
Storage temperature
-
-40 ~ +125
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
I
CE S
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GE S
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
V
GE (th)
Gate-emitter threshold voltage
IC=45 mA, VCE=10 V
5.4
6.0
6.6
V
V
CE sat
(Terminal)
Collector-emitter saturation voltage
IC=450 A, VGE=15 V,
Tvj=25 °C
-
1.70
2.00
Refer to the figure of test circuit
Tvj=125 °C
-
1.95 - V
(Note5)
Tvj=150 °C
-
2.00 -
V
CE sat
(Chip)
IC=450 A,
Tvj=25 °C
-
1.55
1.80
VGE=15 V,
Tvj=125 °C
-
1.75 - V
(Note5)
Tvj=150 °C
-
1.80 - C
ies
Input capacitance
- -
92.3
C
oe s
Output capacitance
VCE=10 V, G-E short-circuited
- - 2.7
nF
C
re s
Reverse transfer capacitance
- -
1.1
QG
Gate charge
VCC=600 V, IC=450 A, VGE=15 V
-
3.0 - μC t
d( o n)
Turn-on delay time
VCC=600 V, IC=450 A, VGE=±15 V,
- - 500
tr
Rise time
- - 200
ns
t
d( o ff )
Turn-off delay time
RG=1.0 Ω, Inductive load
- - 600
tf
Fall time - -
300
VEC
(Note.1)
(Terminal)
Emitter-collector voltage
IE=450 A, G-E short-circuited,
Tvj=25 °C
-
1.80
2.20
Refer to the figure of test circuit
Tvj=125 °C
-
1.95 - V
(Note5)
Tvj=150 °C
-
1.95 -
VEC
(Note.1)
(Chip)
IE=450 A,
Tvj=25 °C
-
1.65
2.00
G-E short-circuited,
Tvj=125 °C
-
1.65 - V
(Note5)
Tvj=150 °C
-
1.65 -
t
rr
(Note1)
Reverse recovery time
VCC=600 V, IE=450 A, VGE=±15 V,
- - 400
ns
Qrr
(Note1)
Reverse recovery charge
RG=1.0 Ω, Inductive load
-
45 - μC Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=450 A,
-
40.9
-
mJ
E
off
Turn-off switching energy per pulse
VGE=±15 V, RG=1.0 Ω, Tvj=150 °C,
-
47
-
Err
(Note1)
Reverse recovery energy per pulse
Inductive load
-
31.6 - mJ
R
CC'+EE'
Internal lead resistance
Main terminals-chip, per switch, TC=25 °C
(Note4)
-
0.3 - mΩ
rg
Internal gate resistance
Per switch
-
1.0 - Ω
MAXIMUM RATINGS (Tvj=25 °C, unless otherwise specified)
ELECTRICAL CHARACTERISTICS (Tvj=25 °C, unless otherwise specified)
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
CMH-11294
Ver.1.0
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
R
th(j - c ) Q
Thermal resistance Junction to case, per Inverter IGBT
(Note4)
- - 31
K/kW
R
th(j - c)D
Junction to case, per Inverter FWD
(Note4)
- - 54
R
th(c- s )
Contact thermal resistance Case to heat sink,
Thermal grease applied
(Note4, 6)
-
13.3
-
K/kW
per 1 module,
PC-TIM applied
(Note4, 7)
-
3.5
-
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
Mt
Mounting torque
Main terminals
M 6 screw
3.5
4.0
4.5
N·m
Ms
Mounting torque
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
N·m
ds
Creepage distance Terminal to terminal
17.3 - -
mm
Terminal to base plate
25.3 - -
da
Clearance Terminal to terminal
12.6 - -
mm
Terminal to base plate
21.8 - -
ec
Flatness of base plate
On the centerline X, Y
(Note8)
±0 - +200
μm
m
mass - -
260 - g
*:
This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment (RoHS) directive 2011/65/EU.
Note1.
Represent ratings and characteristics of the anti-parallel, emitter-collector free-wheeling diode (FWD).
2.
Junction temperature (Tvj) should not increase beyond T
vjm a x
rating.
3.
Pulse width and repetition rate should be such that the device junction temperature (Tvj) dose not exceed T
vjm a x
rating.
4.
Case temperature (TC) and heat sink temperature (TS) are defined on the each surface (mounting side) of base plate and heat sink just under the chips.
Refer to the figure of chip location.
5.
Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
6.
Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K)/D
(C-S)
=50 μm.
7.
Typical value is measured by using PC-TIM of λ=3.4 W/(m·K)/D
(C-S)
=50 μm.
8.
The base plate (mounting side) flatness measurement points (X, Y) are shown in the following figure.
Y
X
+: Convex
Mounting side
Mounting
side
Mounting side
7 mm
9 mm
9 mm
7 mm
+: Convex
14.3 mm
6.3 mm
14.3 mm
THERMAL RESISTANCE CHARACTERISTICS
MECHANICAL CHARACTERISTICS
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
CMH-11294
Ver.1.0
Symbol
Item
Conditions
Limits
Unit
Min.
Typ.
Max.
VCC
(DC) Supply voltage
Applied across C1-E2 terminals
-
600
850
V
V
GEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2 terminals
13.5
15.0
16.5
V
RG
External gate resistance
Per switch
1.0 - 10
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: FWD
RECOMMENDED OPERATING CONDITIONS
Option: PC-TIM applied baseplate outline
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
CMH-11294
Ver.1.0
VCC
-VGE
+VGE
-VGE
+
vCE
vGE
0
iE
iC
C1
E2
C2E1
G1
Es1
G2
Es2
Load
RG
～
t
tf
tr
t
d( o n)
iC
10%
90 %
90 %
vGE
～
～
～
0 V
0 A
0
t
d( o ff )
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iE
0 A
IE
Switching characteristics test circuit and waveforms
trr, Qrr characteristics test waveform
0.1×ICM
ICM
VCC
vCE
iC
t
0
ti
0.1×VCC
0.1×VCC
VCC
ICM
vCE
iC
t
0
0.02×ICM
0.1×VCC
VCC
ICM
vCE
iC
t
0
0.02×ICM
ti
IEM
vEC
iE
t
0 V
ti
t
VCC
0 A
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWD Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
V
G-E short-
circuited
C1
C2E1
E2
G1
Es1
G2
Es2
VGE=15 V
IC
G-E short-
circuited
C1
C2E1
E2
G1
Es1
G2
Es2
VGE=15 V
IC
V
V
G-E short-
circuited
C1
C2E1
E2
G1
Es1
G2
Es2
IE
G-E short-
circuited
G-E short-
circuited
C1
C2E1
E2
G1
Es1
G2
Es2
IE
V
G-E short-
circuited
Tr1 Tr2 Di1
Di2
V
CEsat
characteristics test circuit
VEC characteristics test circuit
TEST CIRCUIT AND WAVEFORMS
TEST CIRCUIT
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
CMH-11294
Ver.1.0
OUTPUT CHARACTERISTICS
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
CHARACTERISTICS
(TYPICAL)
Tvj=25 °C
(Chip)
VGE=15 V
(Chip)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION VOLTAGE V
CEsat
(V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE CHARACTERISTICS
FREE WHEELING DIODE
(TYPICAL)
FORWARD CHARACTERISTICS
(TYPICAL)
Tvj=25 °C
(Chip)
G-E short-circuited
(Chip)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
EMITTER CURRENT I
E
(A)
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Tvj=150 °C
Tvj=125 °C
Tvj=25 °C
VGE=20 V
12 V
11 V
10 V
8 V
15 V
9 V
13.5 V
Tvj=125 °C
Tvj=25 °C
IC=900 A
IC=450 A
IC=225 A
Tvj=150 °C
PERFORMANCE CURVES
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
CMH-11294
Ver.1.0
HALF-BRIDGE SWITCHING CHARACTERISTICS
HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL)
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=1.0 Ω, INDUCTIVE LOAD
VCC=600 V, VGE=±15 V, IC=450 A, INDUCTIVE LOAD
---------------: Tvj=150 °C, - - - - -: Tvj=125 °C
---------------: Tvj=150 °C, - - - - -: Tvj=125 °C
SWITCHING TIME (ns)
SWITCHING TIME (ns)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE SWITCHING CHARACTERISTICS
HALF-BRIDGE SWITCHING CHARACTERISTICS
(TYPICAL)
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=1.0 Ω, INDUCTIVE LOAD
VCC=600 V, VGE=±15 V, IC=450 A, INDUCTIVE LOAD
---------------: Tvj=150 °C, - - - - -: Tvj=125 °C
---------------: Tvj=150 °C, - - - - -: Tvj=125 °C
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
EMITTER CURRENT IE (A)
Eon
Err
t
d( o n )
tr
tf
t
d( o ff)
Eon
E
off
Err
t
d( o n )
tr
t
d( o ff)
tf
E
off
PERFORMANCE CURVES
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
CMH-11294
Ver.1.0
CAPACITANCE CHARACTERISTICS
FREE WHEELING DIODE
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=1.0 Ω, INDUCTIVE LOAD
G-E short-circuited, Tvj=25 °C
---------------: Tvj=150 °C, - - - - -: Tvj=125 °C
CAPACITANCE (nF)
t
rr
(ns), I
rr
(A)
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
GATE CHARGE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(TYPICAL)
(MAXIMUM)
Single pulse, TC=25 °C
VCC=600 V, IC=450 A, Tvj=25 °C
R
th(j - c ) Q
=31 K/kW, R
th(j - c) D
=54 K/kW
GATE-EMITTER VOLTAGE V
GE
(V)
NORMALIZED TRANSIENT THERMAL RESISTANCE Z
th(j- c)
GATE CHARGE QG (nC)
TIME (S)
trr
Irr
C
ies
C
oes
C
res
PERFORMANCE CURVES
Note: The characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
CMH-11294
Ver.1.0
TURN-OFF SWITCHING SAFE OPERATING AREA
SHORT-CIRCUIT SAFE OPERATING AREA
(REVERSE BIAS SAFE OPERATING AREA)
(MAXIMUM)
(MAXIMUM)
VCC850 V, VGE=±15 V, RG=1.0~10 Ω,
-----------------: Tvj=25~150 °C (Normal load operations (Continuous)
VCC800 V, VGE=±15 V, RG=1.0~10 Ω,
- - - - - -: Tvj=175 °C (Unusual load operations (Limited period)
Tvj= 25 ~ 150 °C, tW8 μs, Non-Repetitive
NORMALIZED COLLECTOR CURRENT I
C
NORMALIZED COLLECTOR CURRENT I
C
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER VOLTAGE VCE (V)
PERFORMANCE CURVES
<IGBT Modules>
CM450DY-24T
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : February 2017
10
CMH-11294
Ver.1.0
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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