Powerex CM450DY-24S Data Sheet

CM450DY-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

D

K

K

E2

M

(3 PLACES)

FF

Q

P P P

E2

Q

LABEL

Di1

Tr1

K

G

G2

E2

C1

E1
G1

Z

U

G2

E2

C1

E1
G1

H

N

G

V

W

R

S

Tolerance Otherwise Specified

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

V

J

X

Y

(4 PLACES)

B

C2E1

L

E

C

Tr2

C2E1

Di2

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0

B 3.15 80.0

C 1.14+0.04/-0.02 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 2.44±0.01 62.0±0.25

F 0.98 25.0

G 0.24 6.0

H 0.59 15.0

J 0.81 20.5

K 0.55 14.0

L 0.26 Dia. Dia. 6.5

M M6 Metric M6

Dimensions Inches Millimeters

N 1.18 30.0

P 0.71 18.0

Q 0.28 7.0

R 0.83 21.2

S 0.33 8.5

T 0.0157 0.4

U 0.110 2.8

V 0.16 4.0

W 0.30 7.5

X 0.21 5.3

Y 0.47 12.0

Z 0.85 21.5

Dual IGBTMOD™
S-Series Module

450 Amperes/1200 Volts

Description:

Powerex Dual IGBTMOD™
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors in a half-bridge
configuration with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and

thermal management.

Features:

£ Low Drive Power
£ Low V
£

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM450DY-24S is a
1200V (V
IGBTMOD™ Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 450 24

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

Heat Sinking

), 450 Ampere Dual

CES

CES

108/13 Rev. 2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM450DY-24S
Dual IGBTMOD™ S-Series Module

450 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter Part IGBT/FWDi

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*8

IC 410 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*4

P

*2,*4,*8

I

Emitter Current (Pulse, Repetitive)*3 I

1200 Volts

CES

±20 Volts

GES

900 Amperes

CRM

3330 Watts

tot

*1

410 Amperes

E

*1

900 Amperes

ERM

Module

Characteristics Symbol Rating Units

Maximum Junction Temperature T

Operating Junction Temperature T

Storage Temperature T

Case Temperature

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*8 This model has 450A size IGBT and FWDi chips. This package limitation is based
on package issue.

,*2

TC -40 to +125 °C

rating.

j(max)

) rating.

j(max)

+175 °C

j(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

2500 Volts

ISO

20.4

46.8

77.4

Tr1

Di1

Tr1

Di1

Di1

Tr1

33.3

45.6

0

0

33.6

Tr2 Tr2 Tr2

Di2 Di2 Di2

0

21.5

21.6

35.0

48.2

48.4

0

20.6

33.6

46.6

66.2

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi
Each mark points to the center position of each chip.

LABEL SIDE

2 08/13 Rev. 2