CM450DY-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
A
D
K
K
E2
M
(3 PLACES)
FF
Q
P P P
E2
Q
LABEL
Di1
Tr1
K
G
G2
E2
C1
E1
G1
Z
U
G2
E2
C1
E1
G1
H
N
G
V
W
R
S
Tolerance Otherwise Specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
V
J
X
Y
(4 PLACES)
B
C2E1
L
E
C
Tr2
C2E1
Di2
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
J 0.81 20.5
K 0.55 14.0
L 0.26 Dia. Dia. 6.5
M M6 Metric M6
Dimensions Inches Millimeters
N 1.18 30.0
P 0.71 18.0
Q 0.28 7.0
R 0.83 21.2
S 0.33 8.5
T 0.0157 0.4
U 0.110 2.8
V 0.16 4.0
W 0.30 7.5
X 0.21 5.3
Y 0.47 12.0
Z 0.85 21.5
Dual IGBTMOD™
S-Series Module
450 Amperes/1200 Volts
Description:
Powerex Dual IGBTMOD™
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors in a half-bridge
configuration with each transistor
having a reverse-connected
super-fast recovery free-wheel
diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
£
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM450DY-24S is a
1200V (V
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 450 24
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Heat Sinking
), 450 Ampere Dual
CES
CES
108/13 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DY-24S
Dual IGBTMOD™ S-Series Module
450 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 125°C)
*2,*8
IC 410 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
Emitter Current (TC = 25°C)
*2,*4
P
*2,*4,*8
I
Emitter Current (Pulse, Repetitive)*3 I
1200 Volts
CES
±20 Volts
GES
900 Amperes
CRM
3330 Watts
tot
*1
410 Amperes
E
*1
900 Amperes
ERM
Module
Characteristics Symbol Rating Units
Maximum Junction Temperature T
Operating Junction Temperature T
Storage Temperature T
Case Temperature
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*8 This model has 450A size IGBT and FWDi chips. This package limitation is based
on package issue.
,*2
TC -40 to +125 °C
rating.
j(max)
) rating.
j(max)
+175 °C
j(max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
2500 Volts
ISO
20.4
46.8
77.4
Tr1
Di1
Tr1
Di1
Di1
Tr1
33.3
45.6
0
0
33.6
Tr2 Tr2 Tr2
Di2 Di2 Di2
0
21.5
21.6
35.0
48.2
48.4
0
20.6
33.6
46.6
66.2
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi
Each mark points to the center position of each chip.
LABEL SIDE
2 08/13 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DY-24S
Dual IGBTMOD™ S-Series Module
450 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Inverter Part IGBT/FWDi
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 450A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts
IC = 450A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 450A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 450A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 450A, VGE = 15V — 1050 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 450A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Emitter-Collector Voltage V
(Terminal) IE = 450A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts
IE = 450A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts
Emitter-Collector Voltage V
(Chip) IE = 450A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 450A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 450A, — 54.9 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 4.3 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 45mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 450A, VGE = 15V, Tj = 25°C*5 — 1.80 2.25 Volts
CE(sat)
IC = 450A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 45 nF
ies
VCE = 10V, VGE = 0V — — 9.0 nF
oes
— — 0.75 nF
res
— — 800 ns
d(on)
RG = 0Ω, Inductive Load — — 600 ns
d(off)
*1
IE = 450A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts
EC
*1
IE = 450A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts
EC
*1
VCC = 600V, IE = 450A, VGE = ±15V — — 300 ns
rr
*1
RG = 0Ω, Inductive Load — 24 — µC
rr
VGE = ±15V, RG = 0Ω, — 48.0 — mJ
off
*1
Tj = 150°C, Inductive Load — 32.4 — mJ
rr
CC' + EE'
Main Terminals-Chip, — — 0.7 mΩ
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
*2
20.4
46.8
77.4
0
Tr1
Di1
Tr1
Di1
Di1
Tr1
21.5
21.6
35.0
48.2
48.4
33.3
45.6
0
0
33.6
Tr2 Tr2 Tr2
Di2 Di2 Di2
0
20.6
33.6
46.6
66.2
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi
Each mark points to the center position of each chip.
LABEL SIDE
308/13 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DY-24S
Dual IGBTMOD™ S-Series Module
450 Amperes/1200 Volts
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Contact Thermal Resistance, R
Case to Heatsink*2 (Per 1 Module)
Q Per Inverter IGBT — — 0.045 K/W
th(j-c)
D Per Inverter FWDi — — 0.068 K/W
th(j-c)
Thermal Grease Applied — 0.018 — K/W
th(c-f)
*6
Mechanical Characteristics
Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb
Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb
Creepage Distance ds Terminal to Terminal — — — mm
Terminal to Baseplate — — — mm
Clearance da Terminal to Terminal — — — mm
Terminal to Baseplate — — — mm
Weight m — 580 — Grams
Flatness of Baseplate ec On Centerline X, Y*7 -100 — ±100 µm
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts
Gate (-Emitter Drive) Voltage V
External Gate Resistance RG Per Switch 0 — 8 Ω
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
Y
X
– CONCAVE
+ CONVEX
BOTTOM
LABEL SIDE
BOTTOM
– CONCAVE
+ CONVEX
Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts
GE(on)
20.4
46.8
46.6
77.4
Tr1
Di1
Tr1
Di1
Di1
Tr1
66.2
LABEL SIDE
BOTTOM
3 mm
0
0
33.3
45.6
0
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi
Each mark points to the center position of each chip.
33.6
Tr2 Tr2 Tr2
Di2 Di2 Di2
20.6
33.6
0
21.5
21.6
35.0
48.2
48.4
4 08/13 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DY-24S
Dual IGBTMOD™ S-Series Module
450 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
900
800
700
15
VGE = 20V
13.5
600
, (AMPERES)
500
C
400
300
200
100
COLLECTOR CURRENT, I
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
, (AMPERES)
E
2
10
EMITTER CURRENT, I
1
10
0 1.0 0.5 2.51.5 2.0 3.0
EMITTER-COLLECTOR VOLTAGE, V
3
10
2
10
VCC = 600V
SWITCHING TIME, (ns)
V
R
T
Inductive Load
1
10
1
10
(CHIP - TYPICAL)
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
HALF-BRIDGE
SWITCHING CHARACTERISTICS
= ±15V
GE
= 0Ω
G
= 150°C
j
COLLECTOR CURRENT, I
t
t
d(off)
d(on)
t
f
(TYPICAL)
2
10
, (AMPERES)
C
12
11
10
9
Tj = 25°C
, (VOLTS)
EC
t
SATURATION VOLTAGE CHARACTERISTICS
3.5
3.0
, (VOLTS)
2.5
CE(sat)
2.0
1.5
COLLECTOR-EMITTER
1.0
0.5
SATURATION VOLTAGE, V
0
2
10
, (nF)
1
10
res
, C
oes
, C
ies
0
10
-1
10
CAPACITANCE, C
-2
10
10
3
10
2
r
3
10
10
SWITCHING TIME, (ns)
1
10
10
COLLECTOR-EMITTER
(CHIP - TYPICAL)
VGE = 15V
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
0
COLLECTOR CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(TYPICAL)
CE
C
C
C
ies
oes
res
VGE = 0V
-1
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0
10
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
t
-1
0
10
GATE RESISTANCE, R
d(on)
10
t
r
VCC = 600V
V
I
C
T
j
Inductive Load
10
G
1
t
d(off)
t
f
= ±15V
GE
= 450A
= 125°C
1
, (Ω)
800
900700100 200 300 400 500600
2
10
2
10
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE(sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
3
10
2
10
SWITCHING TIME, (ns)
1
10
10
3
10
2
10
SWITCHING TIME, (ns)
1
10
10
COLLECTOR-EMITTER
(CHIP - TYPICAL)
Tj = 25°C
IC = 900A
IC = 450A
IC = 180A
6 8 10 1412 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
VCC = 600V
V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
j
Inductive Load
1
COLLECTOR CURRENT, IC, (AMPERES)
-1
(TYPICAL)
t
d(off)
t
f
t
d(on)
2
10
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
t
d(on)
t
r
0
10
GATE RESISTANCE, R
t
r
t
d(off)
t
f
VCC = 600V
V
= ±15V
GE
I
= 450A
C
T
= 150°C
j
Inductive Load
1
10
, (Ω)
G
10
10
3
2
508/13 Rev. 2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DY-24S
Dual IGBTMOD™ S-Series Module
450 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
3
10
(ns)
rr
(A), t
rr
2
10
REVERSE RECOVERY, I
1
10
1
10
2
10
, (mJ/PULSE)
rr
, (mJ/PULSE)
off
, E
on
1
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
3
10
(TYPICAL)
2
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
10
2
10
VCC = 600V
V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
j
Inductive Load
I
rr
t
rr
V
= 600V
CC
V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
j
E
on
E
off
E
rr
3
10
3
10
REVERSE RECOVERY CHARACTERISTICS
3
10
(ns)
rr
(A), t
rr
2
10
REVERSE RECOVERY, I
1
10
1
10
CHARACTERISTICS (TYPICAL)
2
10
, (mJ/PULSE)
rr
, (mJ/PULSE)
off
, E
on
1
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
IMPEDANCE CHARACTERISTICS
10-310
0
th(j-c')
10
(TYPICAL)
2
EMITTER CURRENT, IE, (AMPERES)
10
HALF-BRIDGE SWITCHING
2
10
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
(MAXIMUM)
-2
-1
10
VCC = 600V
V
= ±15V
GE
R
= 0Ω
G
T
= 150°C
j
Inductive Load
I
rr
t
rr
VCC = 600V
V
= ±15V
GE
R
= 0Ω
G
T
= 150°C
j
E
on
E
off
E
rr
0
10
3
10
3
10
1
10
GATE CHARGE VS. V
20
VCC = 600V
I
= 450A
C
T
= 25°C
j
15
, (VOLTS)
GE
10
5
GATE-EMITTER VOLTAGE, V
0
0
3
10
, (mJ)
rr
, (mJ)
off
, E
2
10
on
1
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
-1
10
500 1000 1500
GATE CHARGE, QG, (nC)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
10
GATE RESISTANCE, RG, (Ω)
GE
V
= 600V
CC
V
= ±15V
GE
I
= 450A
C
T
= 125°C
j
E
on
E
off
E
rr
0
1
10
2
10
, (mJ)
rr
, (mJ)
off
2
, E
10
on
1
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
-1
10
10
GATE RESISTANCE, RG, (Ω)
-1
10
Single Pulse
T
= 25°C
V
= 600V
CC
V
= ±15V
GE
I
= 450A
C
T
= 150°C
j
E
on
E
off
E
rr
0
1
10
2
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
C
Per Unit Base =
R
=
th(j-c)
• (NORMALIZED VALUE)
-2
0.045°K/W
10
th
(IGBT)
= R
th
R
Z
-3
10
=
th(j-c)
0.068°K/W
(FWDi)
-5
10
TIME, (s)
-4
10
-1
10
-2
10
-3
10
-3
10
6 08/13 Rev. 2
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