Powerex CM450DXL-34SA Data Sheet

CM450DXL-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A
D

AX

E

H

DETAIL “C & D”

AE

B

DETAIL “B”

Es2

Cs2

(13)G2(12)

(11)

HH

DETAIL “A”

NC(10)

NC(9)

C2E1 (8)

C2E1 (7)

G

10

H

U

9

8
7

X

W

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

The tolerance of size between
terminals is assumed to ±0.4

T

Z

Y

V

P

AK

AG

E B

AH

AJ

AQ

AM

H

AL

AZ

C

11

M N

RQ

AF

C1(1)

C1(2)

E2(3)

E2(4)

AU

F

AD

L

1

P

2

S

3

P

4

G H

AC

AG

Es1

TH2

(18)G1(17)

(16)

Tr1 Tr2

Di1 Di2

NC

(5)NC(6)

G J J K J

18

17 16 15 14 13 12 11

AB (6 PLACES)

AA (4 PLACES)

5 6

TH1

Cs1

Th

(15)

(14)

NTC

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0
B 4.79 121.7
C 0.81 20.5
D 5.39 137.0
E 4.33±0.02 110.0±0.5
F 0.53 13.5
G 0.81±0.012 20.5±0.3
H 0.15 3.81
J 0.6 15.24
K 0.74±0.012 19.05±0.3
L 0.75 19.24
M 0.3 7.75
N 0.42 10.74
P 0.86 22.0
Q 3.72±0.012 94.5±0.3
R 3.48 88.53
S 1.08 27.53
T 1.62 41.22
U 1.95 49.72
V 1.53 39.0
W 0.47 12.0
X 0.31 8.0
Y 0.26 6.5
Z 0.61 15.64
AA Dia. 5.5 Dia.

Dimensions Inches Millimeters

AB M6 Metric M6
AC 0.6 15.14
AD 0.14 3.6
AE 4.16±0.012 105.9±0.3
AF 0.55 14.0
AG 0.27 7.0
AH 0.14 3.5
AJ 0.67+0.04/-0.02 17.0+1.0/-0.5
AK 0.12 3.0
AL 0.04 1.15
AM 0.02 0.65
AN 0.05 1.2
AP 0.18 4.5
AQ 0.5 12.5
AR 0.18 Dia. 4.5 Dia.
AS 0.10 Dia. 2.6 Dia.
AT 0.09 Dia. 2.25 Dia.
AU 0.45±0.012 11.36±0.3
AV 0.36±0.012 9.15±0.3
AW 0.46±0.012 11.8±0.3
AX 4.18±0.012 106.3±0.3
AY 0.017±0.012 0.45±0.3
AZ 0.51 13.0
BA 0.54 13.7
BB 0.53±0.012 11.35±0.3

AK

DETAIL “A”

DETAIL “B”

BA

M

DETAIL “C”

AW

AU

AV

DETAIL “D”

Dual IGBT
NX-Series Module

450 Amperes/1700 Volts

AR
AS

AT

AP

AN

Description:

Powerex IGBT Modules are
designed for use in switching

45°

M

BA

AY

BB

G

10

H

9

applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM450DXL-34SA is a 1700V
(V

), 450 Ampere Dual

CES

IGBT Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 450 34

V

CES

106/13 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM450DXL-34SA
Dual IGBT NX-Series Module

450 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)

*2,*4

IC 450 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse, Repetitive)*3 I

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature, Instantaneous Event (Overload) T

Maximum Case Temperature*4 T

Operating Junction Temperature, Continuous Operation (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

18.5

29.5

30.5

43.6

44.6

70.8

84.9

0

24.2

0

Tr1

Di1

Tr2

Di2

1700 Volts

CES

±20 Volts

GES

900 Amperes

CRM

4410 Watts

tot

*1

450 Amperes

E

*1

900 Amperes

ERM

4000 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

45.1

47.2

Th

Tr1

Di1

92.1

0

Tr1

Di1

Tr2

Tr2

Di2

Di2

27.0

41.1

70.2

84.3

0

27.6

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

74.5

95.8

2

06/13 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM450DXL-34SA
Dual IGBT NX-Series Module

450 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 450A, VGE = 15V, Tj = 125°C*5 — 2.2 — Volts

IC = 450A, VGE = 15V, Tj = 150°C*5 — 2.25 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 450A, VGE = 15V, Tj = 125°C*5 — 2.1 — Volts

IC = 450A, VGE = 15V, Tj = 150°C*5 — 2.15 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 450A, VGE = 15V — 2480 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 450A, VGE = ±15V, — — 150 ns

Turn-off Delay Time t

Fall Time tf — — 400 ns

Emitter-Collector Voltage V

(Terminal) IE = 450A, VGE = 0V, Tj = 125°C*5 — 2.9 — Volts

IE = 450A, VGE = 0V, Tj = 150°C*5 — 2.7 — Volts

Emitter-Collector Voltage V

(Chip) IE = 450A, VGE = 0V, Tj = 125°C*5 — 2.8 — Volts

IE = 450A, VGE = 0V, Tj = 150°C*5 — 2.6 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 450A, VGE = ±15V — 147 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 3.2 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 45mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 450A, VGE = 15V, Tj = 25°C*5 — 2.0 2.5 Volts

CE(sat)

IC = 450A, VGE = 15V, Tj = 25°C*5 — 1.9 2.4 Volts

CE(sat)

— — 119 nF

ies

VCE = 10V, VGE = 0V — — 9.8 nF

oes

— — 2.2 nF

res

— — 900 ns

d(on)

RG = 0Ω, Inductive Load — — 900 ns

d(off)

*1

IE = 450A, VGE = 0V, Tj = 25°C*5 — 4.1 5.3 Volts

EC

*1

IE = 450A, VGE = 0V, Tj = 25°C*5 — 4.0 5.2 Volts

EC

*1

VCC = 1000V, IE = 450A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 17 — µC

rr

RG = 0Ω, Tj = 150°C — 129 — mJ

off

*1

Inductive Load — 73 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 0.6 mΩ

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

*4

0

24.2

45.1

18.5

29.5

30.5

43.6

44.6

70.8

84.9

47.2

0

Th

Tr1

Tr1

Di1

Di1

Tr2

Di2

92.1

Tr1

Di1

Tr2

Tr2

Di2

Di2

0

27.0

41.1

70.2

84.3

06/13 Rev. 1

0

27.6

Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

74.5

95.8

3