Powerex CM450DX-34SA Data Sheet

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A
D

H

J

K

L

AB (4 PLACES)

T

M

P

N

S

R

Q

AG

R

U

10

AF (4 PLACES)

11

1 2 3 4 5

V

W

E2

(10)

C1

(11)

X

Es2(9)

Y

G1(3)

Di2

G2(8)

Tr2

Di1

Tr1

Es1(4)

E
F

G

Y

89

TH2

(2)

7

6

AW

AX

DETAIL "C"

DETAIL "C"

DETAIL "A"

Z

Cs1(5)

Y

DETAIL "B"

C2E1

(7)

TH1

C2E1

(6)

AA AY

Th

NTC

(1)

AJ

AC

AD

B

AE

AH

C

45°

K

AE

AW

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0

B 2.44 62.0

C 0.67+0.04/-0.02 17.0+1.0/-0.5

D 5.39 137.0

E 4.79 121.7

F 4.33±0.02 110.0±0.5

G 3.72 94.5

H 0.60 15.14

J 0.53 13.5

K 0.31 7.75

L 1.33±0.012 33.91±0.3

M 2.28±0.012 57.95±0.3

N 1.54 39.0

P 0.87 22.0

Q 0.017±0.012 0.45±0.3

R 0.55 14.0

S 0.47 12.0

T 0.24 6.0

U 0.31 8.0

V 0.26 6.5

W 0.62 15.64

X 0.28±0.012 7.24±0.3

Y 0.15 3.81

Dimensions Inches Millimeters

AA 0.9±0.012 22.86±0.3

AB 0.22 Dia. 5.5 Dia.

AC 1.97±0.02 50.0±0.5

AD 2.26 57.5

AE 0.15 3.75

AF M6 M6

AG 0.28 7.0

AH 0.14 3.5

AJ 0.03 0.8

AK 0.81 20.5

AL 0.70 17.0

AM 0.12 3.0

AN 0.65 16.5

AP 0.49 12.5

AQ 0.18 4.5

AR 0.102 Dia. 2.6 Dia.

AS 0.089 Dia. 2.25 Dia.

AT 0.05 1.2

AU 0.03 0.65

AV 0.05 1.15

AW 0.54 13.7

AX 0.52 13.0

AY 0.285 7.25

Z 1.95±0.012 49.53±0.3

12/14 Rev. 2

AK

AL

AG

AR

AS

AP

AV

AT

DETAIL "B"

DETAIL "A"

AU

Y

AM

AN

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

AQ

AQ

AM

CM450DX-34SA

Dual IGBT
NX-Series Module

450 Amperes/1700 Volts

Description:

Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM450DX-34SA is a 1700V
(V

CES

Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 450 34

CE(sat)

Free-Wheel Diode

Heat Sinking

), 450 Ampere Dual IGBT

V

CES

1

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)*2 IC 300 Amperes

Collector Current (Pulse)*3 IC 450 Amperes

Collector Current (VGE = 15V , Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*4

P

*2,*4

I

Emitter Current (Pulse)*3 I

Emitter Current (Pulse, TC = 25°C)

*2,*4

I

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

0

1700 Volts

CES

±20 Volts

GES

900 Amperes

CRM

3000 Watts

tot

*1

300 Amperes

E

*1

450 Amperes

E

*1

900 Amperes

ERM

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

4000 Volts

ISO

Tr2

Di2

Tr2

Di2

Th

27.8

37.7

41.9

Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

Tr1 Tr1

78.8

Di1Di1

LABEL SIDE

92.7

46.4

32.4

21.2

0

35.4

23.0

2

12/14 Rev. 2

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Each mark points to the center position of each chip.

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 450A, VGE = 15V, Tj = 125°C*5 — 2.9 — Volts

IC = 450A, VGE = 15V, Tj = 150°C*5 — 3.0 — Volts

Collector-Emitter Saturation Voltage V

(Chip)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 450A, VGE = 15V — 1656 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 450A, VGE = ±15V, — 120 240 ns

Turn-off Delay Time t

Fall Time tf — 120 240 ns

Emitter-Collector Voltage V

(Terminal) IE = 450A, VGE = 0V, Tj = 125°C*5 — 3.8 — Volts

IE = 450A, VGE = 0V, Tj = 150°C*5 — 3.6 — Volts

Emitter-Collector Voltage V

(Chip)

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 450A, — 80 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 1.7 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 45mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 450A, VGE = 15V, Tj = 25°C*5 — 2.4 3.05 Volts

CE(sat)

IC = 450A, VGE = 15V, Tj = 25°C*5 — 2.25 2.9 Volts

CE(sat)

— — 79 nF

ies

VCE = 10V, VGE = 0V — — 8 nF

oes

— — 1.36 nF

res

— 300 600 ns

d(on)

RG = 1.2Ω, Inductive Load — 350 700 ns

d(off)

*1

IE = 450A, VGE = 0V, Tj = 25°C*5 — 5.05 6.25 Volts

EC

*1

IE = 450A, VGE = 0V, Tj = 25°C*5 — 4.90 6.10 Volts

EC

*1

VCC = 1000V, IE = 450A, VGE = ±15V — 100 200 ns

rr

*1

RG = 1.2Ω, Inductive Load — 90 — µC

rr

VGE = ±15V, RG = 1.2Ω, — 98 — mJ

off

*1

Tj = 150°C, Inductive Load — 61 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 2.0 mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

*2

Tr2

Di2

Tr2

Di2

Th

0

27.8

37.7

41.9

Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor

Tr1 Tr1

78.8

Di1Di1

LABEL SIDE

92.7

46.4

32.4

21.2

0

35.4

23.0

12/14 Rev. 2

3

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*6 — 3375 — K

(25/50)

= 493Ω -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*2 — — 10 mW

Thermal Resistance Characteristics

Thermal Resistance, Junction to Case*2 R

Thermal Resistance, Junction to Case*2 R

Contact Thermal Resistance, R

Case to Heatsink*2 (Per 1 Module)

Q Per Inverter IGBT — — 0.05 K/W

th(j-c)

D Per Inverter FWDi — — 0.08 K/W

th(j-c)

Thermal Grease Applied — 15 — K/kW

th(c-f)

*7

Mechanical Characteristics

Mounting Torque Mt Mounting to Heatsink, M6 Screw 31 35 40 in-lb

Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb

Creepage Distance ds Terminal to Terminal 17.0 — — mm

Terminal to Baseplate 10.0 — — mm

Clearance da Terminal to Terminal 17.5 — — mm

Terminal to Baseplate 10.0 — — mm

Weight m — 330 — Grams

Flatness of Baseplate ec On Centerline X, Y*8 ±0 — +100 µm

Recommended Operating Conditions, Ta = 25°C

(DC) Supply Voltage VCC Applied Across C1-E2 — 1000 1200 Volts

Gate (-Emitter Drive) Voltage V

External Gate Resistance RG Per Switch 1.2 — 27 Ω

*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

*6 B

(25/50)

R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

MOUNTING SIDE

R

25

= In(

)/( 1 –

50 T25 T50

+ : CONVEX

MOUNTING SIDE

1

– : CONCAVE

)

MOUNTING

X

Y

SIDE

– : CONCAVE

+ : CONVEX

4

Applied Across G1-Es1 / G2-Es2 14.0 15.0 16.5 Volts

GE(on)

Tr2

Di2

Tr2

Di2

Th

0

27.8

37.7

41.9

Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

Tr1 Tr1

78.8

Di1Di1

92.7

LABEL SIDE

46.4

32.4

21.2

0

35.4

23.0

12/14 Rev. 2

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)

900

800

VGE = 20V

15

700

600

, (AMPERES)

C

500

11

400

300

200

100

COLLECTOR CURRENT, I

10

9

8

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

Tj = 25°C

Tj = 25°C

SATURATION VOLTAGE CHARACTERISTICS

(INVERTER PART - TYPICAL)

4.5

VGE = ±15V

, (VOLTS)

CE(sat)

4.0

3.5

3.0

Tj = 25°C
T
T

2.5

2.0

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

FORWARD CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

COLLECTOR-EMITTER

= 125°C

j

= 150°C

j

400 500 600 800700 900100 200 300

FREE-WHEEL DIODE

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

6 8 10 1412 16 18 20

COLLECTOR CURRENT, I

IC = 600A

IC = 450A

IC = 180A

, (AMPERES)

C

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 1 3 652 4

EMITTER-COLLECTOR VOLTAGE, V

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

, (VOLTS)

EC

12/14 Rev. 2

5

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

3

10

, (nF)

10

res

, C

oes

, C

ies

10

10

CAPACITANCE, C

10

VGE = 0V

2

1

0

-1

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING CHARACTERISTICS

4

10

CAPACITANCE VS. V

(INVERTER PART - TYPICAL)

0

10

10

1

CE

C

C

C

ies

oes

res

HALF-BRIDGE

(INVERTER PART - TYPICAL)

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(INVERTER PART - TYPICAL)

4

10

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

2

10

1

t

d(off)

t

f

t

d(on)

t

r

2

10

COLLECTOR CURRENT, I

VCC = 1000V
V

= ±15V

GE

R

= 1.2Ω

G

T

= 125°C

j

Inductive Load

, (AMPERES)

C

10

3

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

4

10

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

1

10

t

d(off)

t

d(on)

COLLECTOR CURRENT, I

t

t

f

t

r

VCC = 1000V
V

= ±15V

GE

R

= 1.2Ω

G

T

= 150°C

j

Inductive Load

10

2

C

, (AMPERES)

10

3

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

EXTERNAL GATE RESISTANCE, R

10

t

f

1

d(off)

t

d(on)

t

r

VCC = 1000V
V

= ±15V

GE

I

= 450A

C

T

= 125°C

j

Inductive Load

, (Ω)

G

10

2

6

12/14 Rev. 2

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

SWITCHING TIME VS.

(INVERTER PART - TYPICAL)

4

10

3

10

2

10

SWITCHING TIME, (ns)

1

10

0

10

EXTERNAL GATE RESISTANCE, R

REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

(ns)

rr

(A), t

rr

2

10

REVERSE RECOVERY, I

1

10

1

10

EMITTER CURRENT, I

GATE RESISTANCE

t

f

t

r

VCC = 1000V
V

GE

I

C

T

= 150°C

j

Inductive Load

1

10

VCC = 1000V
V
R
T

j

Inductive Load

2

10

, (AMPERES)

E

t

d(off)

t

d(on)

= ±15V

= 450A

, (Ω)

G

= ±15V

GE

= 1.2Ω

G

= 150°C

I

rr

t

rr

10

10

REVERSE RECOVERY CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

(ns)

rr

(A), t

rr

2

10

VCC = 1000V
V

= ±15V

GE

R

= 1.2Ω

G

T

= 125°C

j

Inductive Load

REVERSE RECOVERY, I

1

2

10

10

1

EMITTER CURRENT, IE, (AMPERES)

10

2

GATE CHARGE VS. V

(INVERTER PART)

GE

I

rr

t

rr

3

10

20

IC = 450A
V

= 1000V

CC

16

, (VOLTS)

GE

12

8

4

GATE-EMITTER VOLTAGE, V

3

0

0

500 1500 2000 25001000

GATE CHARGE, QG, (nC)

12/14 Rev. 2

7

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

, (mJ)

rr

, (mJ)

off

, E

SWITCHING ENERGY, E

2

10

on

1

10

E

on

REVERSE RECOVERY ENERGY, E

0

10

10

E

off

E

rr

1

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

10

VCC = 1000V
V

GE

R

G

T

= 125°C

j

Inductive Load

2

= ±15V

= 1.2Ω

10

2

10

, (mJ)

rr

1

10

0

10

REVERSE RECOVERY ENERGY, E

-1

10

3

3

10

, (mJ)

rr

, (mJ)

off

2

, E

10

on

1

10

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

0

10

1

10

3

10

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(INVERTER PART - TYPICAL)

VCC = 1000V
V

= ±15V

E

on

E

off

E

rr

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

GE

R

G

T

= 150°C

j

Inductive Load

2

= 1.2Ω

HALF-BRIDGE SWITCHING

CHARACTERISTICS

(INVERTER PART - TYPICAL)

10

10

10

10

10

3

2

, (mJ)

rr

1

0

REVERSE RECOVERY ENERGY, E

-1

, (mJ)

rr

, (mJ)

off

, E

on

2

10

E

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

1

10

0

10

on

E

off

E

rr

GATE RESISTANCE, RG, (Ω)

10

VCC = 1000V
V
I
T
Inductive Load

1

= ±15V

GE

= 450A

C

= 125°C

j

10

, (mJ)

rr

, (mJ)

off

, E

on

2

10

VCC = 1000V
V

= ±15V

E

SWITCHING ENERGY, E

REVERSE RECOVERY ENERGY, E

1

2

10

10

0

on

E

off

E

rr

1

10

GATE RESISTANCE, RG, (Ω)

GE

I

= 450A

C

T

= 150°C

j

Inductive Load

10

2

8

12/14 Rev. 2

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(INVERTER PART - MAXIMUM)

0

th(j-c')

10

-1

10

Single Pulse
T

= 25°C

C

Per Unit Base =
R

• (NORMALIZED VALUE)

-2

10

th

= R

th

Z

th(j-c)

0.05 K/W
(IGBT)
R

th(j-c)

0.08 K/W
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

-5

10

-3

-4

10

10-210-110010

TIME, (s)

=

=

1

12/14 Rev. 2

9