Powerex CM450DX-34SA Data Sheet

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A
D

H

J

K

L

AB (4 PLACES)

T

M

P

N

S

R

Q

AG

R

U

10

AF (4 PLACES)

11

1 2 3 4 5

V

W

E2

(10)

C1

(11)

X

Es2(9)

Y

G1(3)

Di2

G2(8)

Tr2

Di1

Tr1

Es1(4)

E
F

G

Y

89

TH2

(2)

7

6

AW

AX

DETAIL "C"

DETAIL "C"

DETAIL "A"

Z

Cs1(5)

Y

DETAIL "B"

C2E1

(7)

TH1

C2E1

(6)

AA AY

Th

NTC

(1)

AJ

AC

AD

B

AE

AH

C

45°

K

AE

AW

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0

B 2.44 62.0

C 0.67+0.04/-0.02 17.0+1.0/-0.5

D 5.39 137.0

E 4.79 121.7

F 4.33±0.02 110.0±0.5

G 3.72 94.5

H 0.60 15.14

J 0.53 13.5

K 0.31 7.75

L 1.33±0.012 33.91±0.3

M 2.28±0.012 57.95±0.3

N 1.54 39.0

P 0.87 22.0

Q 0.017±0.012 0.45±0.3

R 0.55 14.0

S 0.47 12.0

T 0.24 6.0

U 0.31 8.0

V 0.26 6.5

W 0.62 15.64

X 0.28±0.012 7.24±0.3

Y 0.15 3.81

Dimensions Inches Millimeters

AA 0.9±0.012 22.86±0.3

AB 0.22 Dia. 5.5 Dia.

AC 1.97±0.02 50.0±0.5

AD 2.26 57.5

AE 0.15 3.75

AF M6 M6

AG 0.28 7.0

AH 0.14 3.5

AJ 0.03 0.8

AK 0.81 20.5

AL 0.70 17.0

AM 0.12 3.0

AN 0.65 16.5

AP 0.49 12.5

AQ 0.18 4.5

AR 0.102 Dia. 2.6 Dia.

AS 0.089 Dia. 2.25 Dia.

AT 0.05 1.2

AU 0.03 0.65

AV 0.05 1.15

AW 0.54 13.7

AX 0.52 13.0

AY 0.285 7.25

Z 1.95±0.012 49.53±0.3

12/14 Rev. 2

AK

AL

AG

AR

AS

AP

AV

AT

DETAIL "B"

DETAIL "A"

AU

Y

AM

AN

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

AQ

AQ

AM

CM450DX-34SA

Dual IGBT
NX-Series Module

450 Amperes/1700 Volts

Description:

Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM450DX-34SA is a 1700V
(V

CES

Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 450 34

CE(sat)

Free-Wheel Diode

Heat Sinking

), 450 Ampere Dual IGBT

V

CES

1

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)*2 IC 300 Amperes

Collector Current (Pulse)*3 IC 450 Amperes

Collector Current (VGE = 15V , Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current (TC = 25°C)

*2,*4

P

*2,*4

I

Emitter Current (Pulse)*3 I

Emitter Current (Pulse, TC = 25°C)

*2,*4

I

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

0

1700 Volts

CES

±20 Volts

GES

900 Amperes

CRM

3000 Watts

tot

*1

300 Amperes

E

*1

450 Amperes

E

*1

900 Amperes

ERM

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

4000 Volts

ISO

Tr2

Di2

Tr2

Di2

Th

27.8

37.7

41.9

Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.

Tr1 Tr1

78.8

Di1Di1

LABEL SIDE

92.7

46.4

32.4

21.2

0

35.4

23.0

2

12/14 Rev. 2

CM450DX-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

Each mark points to the center position of each chip.

Dual IGBT NX-Series Module

450 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 450A, VGE = 15V, Tj = 125°C*5 — 2.9 — Volts

IC = 450A, VGE = 15V, Tj = 150°C*5 — 3.0 — Volts

Collector-Emitter Saturation Voltage V

(Chip)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 450A, VGE = 15V — 1656 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 450A, VGE = ±15V, — 120 240 ns

Turn-off Delay Time t

Fall Time tf — 120 240 ns

Emitter-Collector Voltage V

(Terminal) IE = 450A, VGE = 0V, Tj = 125°C*5 — 3.8 — Volts

IE = 450A, VGE = 0V, Tj = 150°C*5 — 3.6 — Volts

Emitter-Collector Voltage V

(Chip)

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IE = 450A, — 80 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 1.7 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 45mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 450A, VGE = 15V, Tj = 25°C*5 — 2.4 3.05 Volts

CE(sat)

IC = 450A, VGE = 15V, Tj = 25°C*5 — 2.25 2.9 Volts

CE(sat)

— — 79 nF

ies

VCE = 10V, VGE = 0V — — 8 nF

oes

— — 1.36 nF

res

— 300 600 ns

d(on)

RG = 1.2Ω, Inductive Load — 350 700 ns

d(off)

*1

IE = 450A, VGE = 0V, Tj = 25°C*5 — 5.05 6.25 Volts

EC

*1

IE = 450A, VGE = 0V, Tj = 25°C*5 — 4.90 6.10 Volts

EC

*1

VCC = 1000V, IE = 450A, VGE = ±15V — 100 200 ns

rr

*1

RG = 1.2Ω, Inductive Load — 90 — µC

rr

VGE = ±15V, RG = 1.2Ω, — 98 — mJ

off

*1

Tj = 150°C, Inductive Load — 61 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 2.0 mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

*2

Tr2

Di2

Tr2

Di2

Th

0

27.8

37.7

41.9

Tr1, Tr2: IGBT, Di1, Di2: FWDi, Th: NTC Thermistor

Tr1 Tr1

78.8

Di1Di1

LABEL SIDE

92.7

46.4

32.4

21.2

0

35.4

23.0

12/14 Rev. 2

3