4 5
0
Dual switch (Half-Bridge)
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL t=0.8
SECTION A
DETAIL B
SECTION C-C
INTERNAL CONNECTION
Di1
Di2
Tr1
9
Th
Tr2
NTC
8
1 2 3 4 5
6
7
10
11
over 30
to 120
±0.8
< IGBT MODULES >
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
Collector current IC .............….......................…
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
●Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power suppl y, etc.
......................… 1 2 0 0 V
CES
.............. 1 7 5 °C
jmax
A
Publication Date : December 2013
Terminal code
1
TH1
2
TH2
3
G1
4
Es1
5
Cs1
6
C2E1
7
C2E1
8
G2
9
Es2
10
E2
11
C1
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 120 to 400 ±1.2
1
< IGBT MODULES >
V
Collector-emitter voltage
G-E short-circuited
1200
V
V
GES
Gate-emitter voltage
C-E short-circuited
± 20
V
(Note2, 4)
(Note3)
P
Total power dissipation
TC=25 °C
(Note2, 4)
2775
W
IE
DC
450
ERM
(Note1)
(Note3)
V
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
V
T
jmax
Maximum junction temperature
Instantaneous event (overload)
175
T
Cmax
Maximum case temperature
(Note4)
125
T
Storage temperature
-
-40 ~ +125
Min.
Typ.
Max.
I
CES
Collector-emitter cut-off current
VCE=V
CES
, G-E short-circuited
- - 1.0
mA
I
GES
Gate-emitter leakage current
VGE=V
GES
, C-E short-circuited
- - 0.5
μA
IC=450 A, VGE=15 V,
Tj=25 °C
-
1.80
2.25
Refer to the figure of test circuit
Tj=125 °C
-
2.00
-
(Note5)
Tj=150 °C
-
2.05
-
VGE=15 V,
Tj=125 °C
-
1.90
-
Tj=150 °C
-
1.95
-
C
ies
Input capacitance
- - 45
C
Reverse transfer capacitance
- - 0.75
QG
Gate charge
VCC=600 V, IC=450 A, VGE=15 V
-
945 - nC
t
d(on)
Turn-on delay time
- - 800
t
Turn-off delay time
- - 600
tf
Fall time - -
300
IE=450 A, G-E short-circuited,
Tj=25 °C
-
2.60
3.40
(Note5)
Tj=150 °C
-
2.10
-
IE=450 A,
Tj=25 °C
-
2.50
3.30
G-E short-circuited,
Tj=125 °C
-
2.06
-
(Note5)
t
(Note1)
Reverse recovery time
VCC=600 V, IE=450 A, VGE=±15 V,
- - 300
ns
Qrr
(Note1)
Reverse recovery charge
RG=0 Ω, Inductive load
-
12 - μC
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=450 A,
-
35.8
-
Err
(Note1)
Reverse recovery energy per pulse
Inductive load
-
27.9 - mJ
Main terminals-chip, per switch,
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
MAXIMUM RATINGS (T
=25 °C, unless otherwise specified )
j
INVERTER PART IGBT/DIODE
Symbol Item Conditions Rating Unit
CES
IC
I
Pulse, Repetitive
CRM
tot
(Note1)
I
Collector current
Emitter current
Pulse, Repetitive
DC, TC=107 °C
(Note2)
450
900
900
MODULE
Symbol Item Conditions Rating Unit
isol
T
Operating junction temperature Continuous operation (under switching) -40 ~ +150
j op
stg
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified )
INVERTER PART IGBT/DIODE
Symbol Item Conditions
Limits
A
A
°C
°C
Unit
V
Gate-emitter threshold voltage IC=45 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
V
CE sat
(Terminal)
Collector-emitter saturation voltage
V
CE sat
(Chip)
C
Output capacitance - - 9.0
oes
res
tr Rise time - - 200
d(off)
(Note1)
VEC
(Terminal)
IC=450 A, Tj=25 °C - 1.70 2.15
(Note5)
VCE=10 V, G-E short-circuited
VCC=600 V, IC=450 A, VGE=±15 V,
RG=0 Ω, Inductive load
Refer to the figure of test circuit Tj=125 °C - 2.16 -
V
V
nF
ns
V
Emitter-collector voltage
(Note1)
VEC
(Chip)
rr
Tj=150 °C - 2.00 -
V
E
Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 52.4 -
off
R
Internal lead resistance
CC'+EE'
rg Internal gate resistance Per switch - 4.3 - Ω
Publication Date : December 2013
TC=25 °C
(Note2)
2
mJ
- - 0.7 mΩ
< IGBT MODULES >
Min.
Typ.
Max.
R25
Zero-power resistance
TC=25 °C
4.85
5.00
5.15
kΩ
100
(Note4)
(Note6)
P25
Power dissipation
TC=25 °C
(Note4)
- - 10
mW
Limits
Min.
Typ.
Max.
(Note4)
R
Junction to case, per Inverter DIODE
(Note4)
- - 86
Case to heat sink, per 1 module,
(Note4, 7)
Mt
Mounting torque
Main terminals
M 6 screw
3.5
4.0
4.5
N·m
Ms
Mounting torque
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
N·m
Terminal to base plate
18.5 - -
Terminal to terminal
10 - -
(Note8)
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
−=
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting s
ide
mounting side
mounting side
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
=25 °C, unless otherwise specified )
j
NTC THERMISTOR PART
Symbol Item Conditions
(Note4)
ΔR/R Deviation of resistance R
B
B-constant Approximate by equation
(25/50)
=493 Ω, TC=100 °C
-7.3 - +7.8 %
- 3375 - K
Limits
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
R
th(j-c)Q
th(j-c)D
Contact thermal resistance
th(c-s)
Thermal resistance
Junction to case, per Inverter IGBT
Thermal grease applied
- - 54
- 15 - K/kW
Unit
K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
m mass - - 350 - g
ds Creepage distance
Terminal to terminal 17 - -
Limits
Min. Typ. Max.
Unit
mm
da Clearance
ec Flatness of base plate On the centerline X, Y
Terminal to base plate 16.3 - -
±0 - +100 μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE)
2. Junction temperature (T
3. Pulse width and repetition rate should be such that the device junction temperature (T
4. Case temperature (T
) should not increase beyond T
j
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink
C
jmax
rating.
) dose not exceed T
j
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
6.
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
R
50
,
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on thickness (t1.6~t2.0) of the PCB.
jmax
mm
rating.
Publication Date : December 2013
3
< IGBT MODULES >
Limits
Min.
Typ.
Max.
RG
External gate resistance
Per switch
0 - 10
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol Item Conditions
VCC (DC) Supply voltage Applied across C1-E2 terminals - 600 850 V
V
Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 terminals 13.5 15.0 16.5 V
GEon
Unit
Publication Date : December 2013
4
< IGBT MODULES >
VCC
-VGE
+VGE
-VGE
+
vCE
vGE
0
iE
iC
11
10
6,7
3
4
8
9
5
Load
RG
～
t
tf
tr
t
d(on)
iC
10%
90 %
90 %
vGE
～
～
～
0 V
0 A
0
t
d(off)
t
Irr
Qrr=0.5×Irr×trr
0.5×Irr
t
trr
iE
0 A
IE
0.1×ICM
ICM
VCC
vCE
iC
t
0
ti
0.1×VCC
0.1×VCC
VCC
ICM
vCE
iC
t
0
0.02×ICM
ti
IEM
vEC
iE
t
0 V
ti
t
VCC
0 A
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
5
V
Short-
circuited
11
6,7
10
IC
3
4
8
9
VGE=15V
V
GE
=15V
5
Short-
circuited
11
6,7
10
IC
3
4
8
9
V
5
V
Short-
circuited
11
6,7
10
IE
3
4
8
9
Short-
circuited
5
Short-
circuited
11
6,7
10
IE
3
4
8
9
V
Short-
circuited
Tr1 Tr2 Di1
Di2
V
CEsat
characteristics test circuit
VEC characteristics test circu it
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
TEST CIRCUIT AND WAVEFORMS
Switching characteristic s t est circuit and waveforms trr, Qrr characteristics test waveform
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
TEST CIRCUIT
Publication Date : December 2013
5
< IGBT MODULES >
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
Tj=25 °C
(Chip)
VGE=15 V
(Chip)
COLLECTOR CURRENT I
(A)
0
100
200
300
400
500
600
700
800
900
0 2 4 6 8 10
0
0.5
1
1.5
2
2.5
3
3.5
0 100 200 300 400 500 600 700 800 900
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE
(TYPICAL)
FREE WHEELING DIODE
(TYPICAL)
Tj=25 °C
(Chip)
G-E short-circuited
(Chip)
COLLECTOR-EMITTER SATURATION VOLTAGE V
(V)
0
2
4
6
8
10
6 8 10 12 14 16 18 20
10
100
1000
0 0.5 1 1.5 2 2.5 3 3.5 4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
IC=900 A
IC=450 A
IC=180 A
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
PERFORMANCE CURVES
INVERTER PART
C
VGE=20 V
OUTPUT CHARACTERISTICS
15 V
12 V
11 V
10 V
9 V
(V)
CEsat
COLLECTOR-EMITTER SATURATION VOLTAGE V
CHARACTERISTICS
Tj=150 °C
Tj=125 °C
Tj=25 °C
CHARACTERISTICS
CEsat
Publication Date : December 2013
FORWARD CHARACTERISTICS
Tj=150 °C
(A)
E
Tj=25 °C
EMITTER CURRENT I
Tj=125 °C
6
< IGBT MODULES >
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
SWITCHING TIME t
, t
, t
(ns)
100
1000
10000
10 100 1000
1
10
100
SWITCHING TIME t
(ns)
SWITCHING TIME t
f
, t
d(off)
(ns)
100
1000
10000
0.1 1 10 100
10
100
1000
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
HALF-BRIDGE
(TYPICAL)
HALF-BRIDGE
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω,
VCC=600 V, VGE=±15 V, IC/IE=450 A,
SWITCHING ENERGY (mJ)
0.1
1
10
100
10 100 1000
1
10
100
1000
REVERSE RECOVERY ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
0.01 0.1 1 10 100
10
100
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
EXTERNAL GATE RESISTANCE RG (Ω)
t
d(on)
tr
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
PERFORMANCE CURVES
INVERTER PART
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
tr
VCC=600 V, VGE=±15 V, IC=450 A, INDUCTIVE LOAD
---------------: T
=150 °C, - - - - -: Tj=125 °C
j
d(off)
f
d(on)
t
d(off)
t
d(on)
tf
r
t
d(off)
tf
(ns)
d(on)
, t
r
SWITCHING TIME t
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
INDUCTIVE LOAD, PER PULSE
---------------: Tj=150 °C, - - - - -: Tj=125 °C
Publication Date : December 2013
INDUCTIVE LOAD, PER PULSE
---------------: Tj=150 °C, - - - - -: Tj=125 °C
E
off
E
off
Err
Eon
(mJ)
on
SWITCHING ENERGY E
Eon
(mJ)
Err
off
SWITCHING ENERGY E
7
< IGBT MODULES >
(TYPICAL)
FREE WHEELING DIODE
(TYPICAL)
CAPACITANCE (nF)
0.01
0.1
1
10
100
0.1 1 10 100
10
100
1000
10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER CURRENT IE (A)
(TYPICAL)
(MAXIMUM)
GATE-EMITTER VOLTAGE V
(V)
0
5
10
15
20
0 500 1000 1500
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
GATE CHARGE QG (nC)
TIME (S)
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
G-E short-circuited, Tj=25 °C
REVERSE RECOVERY CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T
C
ies
C
oes
(A)
rr
C
res
(ns), I
rr
t
=150 °C, - - - - -: Tj=125 °C
j
Irr
trr
GATE CHARGE CHARACTERISTICS
VCC=600 V, IC=450 A, Tj=25 °C
GE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Single pulse, TC=25 °C
R
th(j-c)Q
=54 K/kW, R
th(j-c)D
=86 K/kW
th(j-c)
Publication Date : December 2013
NORMALIZED TRANSIENT THERMAL RESISTANCE Z
8
< IGBT MODULES >
(TYPICAL)
RESISTANCE R (kΩ)
0.1
1
10
100
-50 -25 0 25 50 75 100 125
TEMPERATURE T (°C)
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
PERFORMANCE CURVES
NTC thermistor part
TEMPERATURE CHARACTERISTICS
Publication Date : December 2013
9
< IGBT MODULES >
CM450DX-24S1
HIGH POWER SWITCHING USE
INSULATE D TYPE
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occ ur with them. Trouble with semiconductors
may lead to personal injury, fire or property dama ge. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer's applicat ion; they do not convey any lic ense under any
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© 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : December 2013
10
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