CM450DX-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
A
D
E
FJ J
G
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Q
S
T
U
R
S
T
U
Q
W
V
AK
AW
AX
DETAIL "B"
47
48
12345678910111213141516171819202122
X
AT
AU
KK
L
M
AV
G2(38)
E2(39)
K
N
DETAIL "A"
E1C2(24) E1C2(23)
Tr 2
E2
(47)
Di2
C1
(48)
Di1
DETAIL "B"
Tr 1
Th
NTC
TH1
(1)
P
C1(22)
E1(16)
G1(15)
TH2
(2)
24
23
L
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
Y
(4 PLACES)
ZAAAB
AC (4 PLACES)
AL
AM
C
AP
AN
AQ
B
AG
AR
AS
DETAIL "A"
AH
AJ
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.98 152.0
B 2.44 62.0
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.89 99.0
H 3.72 94.5
J 0.53 13.5
K 0.15 3.8
L 0.28 7.25
M 0.30 7.75
N 1.95 49.54
P 0.9 22.86
Q 0.55 14.0
R 0.87 22.0
S 0.67 17.0
T 0.48 12.0
U 0.24 6.0
V 0.16 4.2
W 0.37 6.5
X 0.83 21.14
Y M6 M6
Dimensions Inches Millimeters
Z 1.53 39.0
AA 1.97±0.02 50.0±0.5
AB 2.26 57.5
AC 0.22 Dia. 5.5 Dia.
AD 0.67+0.04/-0.02 17.0+1.0/-0.5
AE 0.51 13.0
AF 0.27 7.0
AG 0.03 0.8
AH 0.81 20.5
AJ 0.12 3.0
AK 0.14 3.5
AL 0.21 5.4
AM 0.49 12.5
AN 0.15 3.81
AP 0.05 1.15
AQ 0.025 0.65
AR 0.29 7.4
AS 0.05 1.2
AT 0.17 Dia. 4.3 Dia.
AU 0.10 Dia. 2.5 Dia.
AV 0.08 Dia. 2.1 Dia.
AW 0.06 1.5
AX 0.49 12.5
AD
AE
Dual IGBTMOD™
NX-S Series Module
450 Amperes/1200 Volts
AF
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM450DX-24S is a 1200V (V
450 Ampere Dual IGBTMOD™
Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 450 24
CE(sat)
Free-Wheel Diode
Heat Sinking
),
CES
V
CES
110/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBTMOD™ NX-S Series Module
450 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol CM450DX-24S Units
Maximum Junction Temperature T
Operating Power Device Junction Temperature T
Storage Temperature T
+175 °C
j(max)
-40 to 150 °C
j(op)
-40 to 125 °C
stg
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M6 Main Terminal Screws — 40 in-lb
Module Weight (Typical) — 330 Grams
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V
2500 V
ISO
rms
Inverter Sector
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 119°C)
*1,*5
IC 450 Amperes
Collector Current (Pulse)*4 I
Total Power Dissipation (TC = 25°C)
Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)
*1,*5
P
*1,*5
I
Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 I
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (T
j(max)
) rating.
j(max)
rating.
1200 Volts
CES
±20 Volts
GES
900 Amperes
CRM
3400 Watts
tot
*3
450 Amperes
E
*3
900 Amperes
ERM
2 10/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBTMOD™ NX-S Series Module
450 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Inverter Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Chip) IC = 450A, VGE = 15V, Tj = 125°C — 1.9 — Volts
IC = 450A, VGE = 15V, Tj = 150°C — 1.95 — Volts
Collector-Emitter Saturation Voltage V
(Terminal) IC = 450A, VGE = 15V, Tj = 125°C*6 — 2.15 — Volts
IC = 450A, VGE = 15V, Tj = 150°C*6 — 2.2 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge QG VCC = 600V, IC = 450A, VGE = 15V — 1050 — nC
Inductive Turn-on Delay Time t
Load Turn-on Rise Time tr VCC = 600V, IC = 450A, *7 — — 200 ns
Switch Turn-off Delay Time t
Time Turn-off Fall Time tf RG = 1.6Ω, Inductive Load, — — 300 ns
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Loss per Pulse Eon VCC = 600V, IC (IE) = 450A, *7 — 55 — mJ
Turn-off Switching Loss per Pulse E
Reverse Recovery Loss per Pulse E
Emitter-Collector Voltage V
(Chip) IE = 450A, VGE = 0V, Tj = 125°C — 1.7 — Volts
IE = 450A, VGE = 0V, Tj = 150°C — 1.7 — Volts
Emitter-Collector Voltage V
(Terminal) IE = 450A, VGE = 0V, Tj = 125°C*6 — 1.95 — Volts
IE = 450A, VGE = 0V, Tj = 150°C*6 — 1.95 — Volts
VCE = V
CES
±VGE = V
GES
IC = 45mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 450A, VGE = 15V, Tj = 25°C — 1.7 2.15 Volts
CE(sat)
IC = 450A, VGE = 15V, Tj = 25°C*6 — 1.95 2.4 Volts
CE(sat)
— — 45 nF
ies
VGE = 0V, VCE = 10V — — 9.0 nF
oes
— — 0.75 nF
res
— — 800 ns
d(on)
VGE = ±15V, — — 600 ns
d(off)
*3
IE = 450A — — 300 ns
rr
*3
— 24 — µC
rr
VGE = ±15V, RG = 1.6Ω, — 48 — mJ
off
*3
Tj = 150°C, Inductive Load — 27 — mJ
rec
*3
IE = 450A, VGE = 0V, Tj = 25°C — 1.7 2.15 Volts
EC
*3
IE = 450A, VGE = 0V, Tj = 25°C*6 — 1.95 2.4 Volts
EC
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*1 R
Thermal Resistance, Junction to Case*1 R
Internal Gate Resistance rg Per Switch — 4.3 — Ω
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Recommended maximum collector supply voltage VCC is 800Vdc.
Q Per IGBT — — 0.044 K/W
th(j-c)
D Per FWDi — — 0.78 K/W
th(j-c)
310/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBTMOD™ NX-S Series Module
450 Amperes/1200 Volts
NTC Thermistor Sector, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R
B Constant B
Approximate by Equation*9 — 3375 — K
(25/50)
= 493Ω –7.3 — +7.8 %
100
Power Dissipation P25 TC = 25°C — — 10 mW
Module, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Lead Resistance (Main Terminals-Chip) R
Contact Thermal Resistance*1 R
(Case to Heatsink) (Per 1 Module)
*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*9 B
(25/50)
R
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]
= In(
R
25
)/( 1 –
50 T25 T50
1
) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],
TC = 25°C (Per Switch) — — 0.7 mΩ
lead
Thermal Grease Applied — 0.015 — K/W
th(c-f)
*2
4 10/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBTMOD™ NX-S Series Module
450 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
900
800
VGE =
20V
15
13.5
700
600
, (AMPERES)
500
C
400
300
200
100
COLLECTOR CURRENT, I
0
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
3
10
2
10
, (AMPERES)
E
1
10
EMITTER CURRENT, I
0
10
0 1.0 1.50.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
3
10
2
10
SWITCHING TIME, (ns)
1
10
-1
10
10
GATE RESISTANCE, R
VGE = 15V
t
d(on)
t
f
t
r
0
Tj = 25°C
12
11
10
9
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
, (VOLTS)
EC
t
d(off)
VCC = 600V
V
= ±15V
GE
I
= 450A
C
T
= 150°C
j
Inductive Load
1
10
, (Ω)
G
SATURATION VOLTAGE CHARACTERISTICS
3.5
3.0
, (VOLTS)
2.5
CE(sat)
2.0
1.5
1.0
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE, V
0
2
10
, (nF)
1
10
res
, C
oes
, C
ies
0
10
-1
10
CAPACITANCE, C
COLLECTOR-EMITTER
(INVERTER PART - TYPICAL)
VGE = 15V
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
0
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. V
(INVERTER PART - TYPICAL)
CE
C
C
C
ies
oes
res
SATURATION VOLTAGE CHARACTERISTICS
10
8
, (VOLTS)
CE(sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
900800500 600400100 200 300 700
0
3
10
2
10
SWITCHING TIME, (ns)
VGE = 0V
-2
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
3
10
(ns)
rr
(A), t
rr
2
10
REVERSE RECOVERY, I
1
2
10
10
1
10
0
10
1
10
(INVERTER PART - TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 1.6W
G
T
= 150°C
j
Inductive Load
I
rr
t
rr
2
EMITTER CURRENT, IE, (AMPERES)
10
2
10
3
10
1
10
10
20
16
, (VOLTS)
GE
12
8
4
GATE-EMITTER VOLTAGE, V
0
COLLECTOR-EMITTER
(INVERTER PART - TYPICAL)
Tj = 25°C
IC = 900A
IC = 450A
IC = 180A
6 8 10 1412 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
t
d(off)
t
d(on)
t
r
1
COLLECTOR CURRENT, IC, (AMPERES)
GATE CHARGE VS. V
IC = 450A
V
= 600V
CC
250 500 750 1000 1250 1500
0
GATE CHARGE, QG, (nC)
2
10
(INVERTER PART)
t
f
VCC = 600V
V
= ±15V
GE
R
= 1.6W
G
T
= 150°C
j
Inductive Load
GE
3
10
510/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBTMOD™ NX-S Series Module
450 Amperes/1200 Volts
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
2
10
VCC = 600V
V
= ±15V
GE
R
= 1.6W
G
T
= 150°C
j
Ls = 50nH
, (mJ/PULSE)
off
Inductive Load
, E
on
1
10
SWITCHING LOSS, E
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
2
10
, (mJ/PULSE)
rr
1
10
REVERSE RECOVERY
SWITCHING LOSS, E
0
10
10
GATE RESISTANCE
(INVERTER PART - TYPICAL)
-1
GATE RESISTANCE, R
2
10
E
rr
0
10
10
E
on
E
off
VCC = 600V
V
= ±15V
GE
I
= 450A
C
T
= 150°C
j
Ls = 50nH
Inductive Load
1
, (Ω)
G
3
10
2
10
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
2
10
, (mJ/PULSE)
off
, E
on
1
10
SWITCHING LOSS, E
0
10
-1
10
IMPEDANCE CHARACTERISTICS
10-310
0
th(j-c')
10
-1
10
Single Pulse
T
C
Per Unit Base =
R
th(j-c)
• (NORMALIZED VALUE)
0.044°C/W
-2
10
th
(IGBT)
= R
th
R
th(j-c)
Z
0.078°C/W
(FWDi)
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
0
10
GATE RESISTANCE, RG, (Ω)
TRANSIENT THERMAL
(INVERTER PART - TYPICAL)
-2
= 25°C
=
=
-1
10
-5
10
TIME, (s)
VCC = 600V
V
= ±15V
GE
I
= 450A
C
T
= 150°C
j
Ls = 50nH
Inductive Load
1
10
0
10
-4
10
REVERSE RECOVERY SWITCHING LOSS VS.
2
10
, (mJ/PULSE)
rr
1
10
REVERSE RECOVERY
2
1
-1
10
-2
10
-3
10
-3
SWITCHING LOSS, E
0
10
10
E
on
E
off
10
10
10
EMITTER CURRENT
(INVERTER PART - TYPICAL)
VCC = 600V
V
= ±15V
GE
R
= 1.6W
G
T
= 150°C
j
Ls = 50nH
Inductive Load
1
EMITTER CURRENT, IE, (AMPERES)
2
10
E
rr
3
10
6 10/10 Rev. 1
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