SD-14
Powerex,Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM421255, CM421655
SCR/Diode POW-R-BLOK™ Modules
55 Amperes/1200-1600 Volts
Absolute Maximum Ratings
Characteristics Symbol CM421255 CM421655 Units
Peak Forward Blocking Voltage V
DRM
1200 1600 Volts
Transient Peak Forward Blocking Voltage (Non-Repetitive), t < 5ms V
DSM
1350 1700 Volts
DC Forward Blocking Voltage V
D(DC)
960 1280 Volts
Peak Reverse Blocking Voltage V
RRM
1200 1600 Volts
Transient Peak Reverse Blocking Voltage (Non-Repetitive), t < 5ms V
RSM
1350 1700 Volts
DC Reverse Blocking Voltage V
R(DC)
960 1280 Volts
RMS On-State Current I
T(RMS), IF(RMS)
86 86 Amperes
Average On-State Current, TC= 81°C I
T(AV), IF(AV)
55 55 Amperes
Peak One-Cycle Surge (Non-Repetitive) On-State Current (60Hz) I
TSM, IFSM
1100 1100 Amperes
Peak One-Cycle Surge (Non-Repetitive) On-State Current (50Hz) I
TSM, IFSM
1000 1000 Amperes
I2t (for Fusing), 8.3 milliseconds I2t 5000 5000 A2sec
Critical Rate-of-Rise of On-State Current* di/dt 100 100 Amperes/ms
Peak Gate Power Dissipation P
GM
5.0 5.0 Watts
Average Gate Power Dissipation P
G(AV)
0.5 0.5 Watts
Peak Forward Gate Voltage V
GFM
10 10 Volts
Peak Reverse Gate Voltage V
GRM
5.0 5.0 Volts
Peak Forward Gate Current I
GFM
2.0 2.0 Amperes
Storage Temperature T
STG
-40 to 125 -40 to 125 °C
Operating Temperature T
j
-40 to 125 -40 to 125 °C
Maximum Mounting Torque M6 Mounting Screw — 26 26 in.-lb.
Maximum Mounting Torque M5 Terminal Screw — 17 17 in.-lb.
Module Weight (Typical) — 160 160 Grams
V Isolation V
RMS
2500 2500 Volts
*Tj= 125°C, IG= 0.5A, VD= 1/2 V
DRM
Electrical and Thermal Characteristics, Tj= 25°C unless otherwise specified
Characteristics Symbol Test Conditions CM421255/CM421655 Units
Blocking State Maximums
Forward Leakage Current, Peak I
DRM
Tj= 125°C, V
DRM
= Rated 10 mA
Reverse Leakage Current, Peak I
RRM
Tj= 125°C, V
RRM
= Rated 10 mA
Conducting State Maximums
Peak On-State Voltage V
FM, VTMIFM
= 165A, ITM= 165A 1.5 Volts
Switching Minimums
Critical Rate-of-Rise of Off-State Voltage dv/dt Tj= 125°C, VD= 2/3 V
DRM
500 Volts/ms
Thermal Maximums
Thermal Resistance, Junction-to-Case R
u(J-C)
Per Module 0.8 °C/Watt
Thermal Resistance, Case-to-Sink (Lubricated) R
u(C-S)
Per Module 0.2 °C/Watt
Gate Parameters Maximums
Gate Current-to-Trigger I
GT
VD= 6V, RL= 2Ω 100 mA
Gate Voltage-to-Trigger V
GT
VD= 6V, RL= 2Ω 2.0 Volts
Non-Tr iggering Gate Voltage V
GDM
Tj= 125°C, VD= 1/2 V
DRM
0.25 Volts