POWEREX CM400HU-24H Datasheet
CM400HU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
J
C
G
D
2 - M4 NUTS
P
HE
G
E
K
L
E
C
CM
T
Measured Point
C
2 - M8 NUTS
M 4 - Mounting
Holes
F
N
Single IGBTMOD™
U-Series Module
400 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
E
E
G
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 3.66±0.01 93.0±0.25
C 2.44 62.0
D 1.89±0.01 48.0±0.25
E 0.53 13.5
F 0.49 12.55
G 0.39 10.0
C
Dimensions Inches Millimeters
H 1.02 26.0
J 0.37 9.5
K 1.14 29.0
L 0.81 20.5
M 0.26 Dia. 6.5 Dia.
N 1.34 +0.04/-0.02 34 +1.0/-0.5
P 1.02 +0.04/-0.02 26 +1.0/-0.5
Features:
□ Low Drive Power
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400HU-24H is a
1200V (V
), 400 Ampere Single
CES
IGBTMOD™ Power Module.
Type Amperes Volts (x 50)
Current Rating V
CM 400 24
CES
7
7
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HU-24H
Single IGBTMOD™ U-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400HU-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 25°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal, M6 Mounting – 40 in-lb
Mounting Torque, M4 Terminal – 15 in-lb
Weight – 450 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
400 Amperes
800* Amperes
400 Amperes
800* Amperes
2100 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 2 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 40mA, VCE = 10V 4.5 6 7.5 Volts
IC = 400A, VGE = 15V, Tj = 25°C – 2.9 3.7 V olts
IC = 400A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 600V, IC = 400A, VGE = 15V – 1500 – nC
IE = 400A, VGE = 0V – – 3.2 Volts
rating.
j(max)
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Tur n-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recover y Time t
Diode Reverse Recover y Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V – – 21 nf
VCC = 600V, IC = 400A, – – 250 ns
V
= V
GE1
= 15V, – – 350 ns
GE2
RG = 0.78V, Resistive – – 350 ns
Load Switching Operation – – 350 ns
IE = 400A, diE/dt = -800A/µs––300ns
IE = 400A, diE/dt = -800A/µs – 2.2 – µC
––60nf
––12nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
8
8
Q Per IGBT Module – – 0.06 °C/W
th(j-c)
D Per FWDi Module – – 0.09 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.02 – °C/W
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