POWEREX CM400HB-90H Datasheet

CM400HB-90H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
S
P
F
Q
R
U NUTS
T
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
J 0.42 10.65 K 1.92 48.8 L 2.24±0.01 57.0±0.25 M 1.71 43.5
(3 TYP)
D
LL
CM
C
K
C
G
E
N
Y
C
E
EG
J
C
E
Dimensions Inches Millimeters
N 2.42 61.5 P 0.59 15.0 Q 1.57 40.0 R 0.20 5.2 S 1.16 29.5 T 1.10 28.0 U M4 Metric M4 V M8 Metric M8
W 0.28 Dia. Dia.7.0
X 0.20 5.0 Y 0.71 18.0
C
E
H
M
C
E
G
W (6 TYP)
V NUTS (4 TYP)
EB
C
X
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
Low Drive PowerLow V Super-Fast Recovery
Isolated Baseplate for Easy
Applications:
Traction □ Medium Voltage DriveHigh Voltage Power Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM400HB-90H is a 4500V (V 400 Ampere Single IGBTMOD™ Power Module.
Type Current Rating V
CM 400 90
CE(sat)
Free-Wheel Diode
Heat Sinking
CES
CES
Amperes Volts (x 50)
),
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HB-90H Single IGBTMOD HVIGBT
400 Amperes/4500 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400HB-90H Units
Junction Temperature T Storage T emperature T Collector-Emitter Voltage (VGE = 0V) V Gate-Emitter Voltage (VCE = 0V) V Collector Current (Tc = 25°C) I Peak Collector Current (Pulse) I Diode Forward Current** (Tc = 25°C) I Diode Forward Surge Current** (Pulse) I Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj 125°C) P
j
stg CES GES
C
CM
E
EM
C
Max. Mounting Torque M8 Terminal Screws – 115 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Max. Mounting Torque M4 Auxiliary Terminal Screws – 17 in-lb Module Weight (Typical) – 1.5 kg Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
rating.
iso
-40 to 150 °C
-40 to 125 °C 4500 Volts
±20 Volts 400 Amperes
800* Amperes
400 Amperes 800* Amperes 4300 Watts
6000 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Current I Gate-Emitter Threshold V oltage V Collector-Emitter Saturation Voltage V
Total Gate Charge Q Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES GES
GE(th)
CE(sat)
G VCC
EC
VCE = V VGE = V
, VGE = 0V ––8.0 mA
CES
, VCE = 0V ––0.5
GES
µ
A
IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 400A, VGE = 15V, Tj = 25°C 3.0 3.9* Volts
IC = 400A, VGE = 15V, Tj = 125°C 3.3 Volts
= 2250V, IC = 400A, VGE = 15V – 3.6 – µC
IE = 400A, VGE = 0V 4.0 5.2 Volts
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