POWEREX CM400HA-34H Datasheet
CM400HA-34H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
R - M4 THD
(2 TYP.)
A B
E
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.49 114.0
B 3.66±0.01 93.0±0.25
C 1.50+0.04/-0.02 38.0+1.0/-0.5
D 1.26 32.0
E 1.18+0.04/-0.02 30.0+1.0/-0.5
F 1.02 26.0
G 1.0 25.5
H 0.83 21.0
H
H
E
G
N
E
G
L
E
J
EC
DF
Dimensions Inches Millimeters
J 0.71 18.0
K 0.57 14.5
L 0.43 11.0
M 0.41 10.5
N 0.35 9.0
P M8 Metric M8
Q 0.26 Dia. Dia. 6.5
R M4 Metric M4
M
K
Q - DIA.
(4 TYP.)
P - M8 THD
(2 TYP.)
G
M
C
C
Single IGBTMOD™
H-Series Module
400 Amperes/1700 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recover y
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Auxilliary Inverter for Traction
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-34H
is a 1700V (V
Single IGBTMOD™ Power Module.
Type Current Rating V
CM 400 34
CE(sat)
Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 400 Ampere
CES
Amperes Volts (x 50)
CES
219
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-34H
Single IGBTMOD™ H-Series Module
400 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400HA-34H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Max. Mounting Torque M4 G-E Terminal Screw – 13 in-lb
Module Weight (Typical) – 980 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to +150 °C
–40 to +125 °C
1700 Volts
±20 Volts
400 Amperes
800* Amperes
400 Amperes
800* Amperes
4100 Watts
4000 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 4 mA
CES
, VCE = 0V – – 0.5
GES
µ
IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 400A, VGE = 15V – 2.7 3.7** Volts
A
IC = 400A, VGE = 15V, Tj = 150°C – – –* Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 750V, IC = 400A, VGS = 15V – 2900 – nC
IE = 400A, VGS = 0V – – 3.4 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V – – 20 nF
VCC = 750V, IC = 400A, – – 1500 ns
V
= V
GE1
= 15V, RG = 10Ω – – 1500 ns
GE2
IE = 600A, diE/dt = –800A/µs – – 400 ns
IE = 600A, diE/dt = –800A/µs – 7.0 –
––85nF
–– 15nF
– – 900 ns
– – 800 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.023 °C/W
Per IGBT – – 0.030 °C/W
Per FWDi – – 0.060 °C/W
220
Loading...