POWEREX CM400HA-24H Datasheet

CM400HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A B
KFJH
Q - THD (2 TYP.)
D
C
J
P - DIA. (4 TYP.)
E
G
R - THD (2 TYP.)
M
L
Single IGBTMOD™ H-Series Module
400 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
E
E
G
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
N
C
Dimensions Inches Millimeters
J 0.79 20.0 K 0.69 17.5 L 0.63 16.0 M 0.35 9.0 N 0.28 7.0 P 0.26 Dia. Dia. 6.5 Q M6 Metric M6 R M4 Metric M4
Features:
Low Drive PowerLow V
CE(sat)
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor ControlMotion/Servo ControlUPSWelding Power SuppliesLaser Power Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM400HA-24H is a 1200V (V
), 400 Ampere
CES
Single IGBTMOD™ Power Module.
Type Current Rating V
Amperes Volts (x 50)
CM 400 24
CES
189
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HA-24H Single IGBTMOD™ H-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400HA-24H Units
Junction Temperature T Storage T emperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage V Collector Current I Peak Collector Current I Diode Forward Current I Diode Forward Surge Current I Power Dissipation P
j
stg CES GES
C
CM
F
FM
d
Max. Mounting Torque M6 Terminal Screws 26 in-lb Max. Mounting Torque M6 Mounting Screws 26 in-lb Module Weight (Typical) 400 Grams V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C –40 to 125 °C
1200 Volts
±20 Volts 400 Amperes
800* Amperes
400 Amperes 800* Amperes 2800 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Current I Gate-Emitter Threshold V oltage V Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V VGE = V
, VGE = 0V 1.0 mA
CES
, VCE = 0V 0.5
GES
µ
IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 400A, VGE = 15V 2.5 3.4** Volts
A
IC = 400A, VGE = 15V, Tj = 150°C 2.25 Volts Total Gate Charge Q Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 400A, VGS = 15V 2000 nC
IE = 400A, VGS = 0V 3.4 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Resistive Turn-on Delay Time t
d(on)
Load Rise Time t Switching Turn-off Delay Time t
d(off)
Times Fall Time t Diode Reverse Recovery Time t Diode Reverse Recovery Charge Q
ies oes res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz 28 nF
VCC = 600V, IC = 400A 500 ns
V
= V
GE1
= 15V, RG = 0.78 350 ns
GE2
IE = 400A, diE/dt = –800A/µs 250 ns IE = 400A, diE/dt = –800A/µs 2.97
80 nF
–– 16nF – 300 ns
350 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Contact Thermal Resistance R
th(j-c) th(j-c)
th(c-f)
Per Module, Thermal Grease Applied 0.040 °C/W
Per IGBT 0.045 °C/W
Per FWDi 0.09 °C/W
190
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