Powerex CM400E4G-130H Data Sheet

MITSUBISHI HVIGBT MODULES

Prepared by

Date

th

3

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE

K.Kurachi

I.Umezaki 24-Feb.-2009

Revision: B

CM400E4G-130H

HIGH POWER SWITCHING USE

CM400E4G-130H

● IC ……………………… 400 A

● V

CES

● 1-element in a Pack (for brake chopper)

● Insulated Type

● AlSiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

…………………… 6500 V

Dimensions in mm

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES

HVM-1049-B 1 of 8

MITSUBISHI HVIGBT MODULES

CM400E4G-130H

th

3

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE

HIGH POWER SWITCHING USE

MAXIMUM RATINGS

Symbol

V

CES

V

GES

IC DC, Tc = 80°C 400 A

ICM

IE DC 400 A

IEM

Pc

V

iso

Ve

Tj

Top

T

stg

t

psc

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum power dissipation

Isolation voltage

Partial discharge extinction voltage

Junction temperature

Operating temperature

Storage temperature

Maximum short circuit pulse width

Item

VGE = 0 V

VCE = 0V, Tj = 25°C ± 20 V

(Note 1)

Pulse

(Note 2)

(Note 3)

(Note 1)

Pulse

= 25°C, IGBT part 5900 W

T

c

RMS, sinusoidal, f = 60Hz, t = 1 min. 10200 V

RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC 5100 V

−40 ~ +150 °C

−40 ~ +125 °C

−40 ~ +125 °C

V

=4500V, VCE ≤ V

CC

Conditions Ratings Unit

Tj = -40 °C 5800

Tj = +25 °C 6300

= +125 °C 6500

T

j

V

800 A

800 A

, VGE =15V, Tj =125°C

CES

10 µs

ELECTRICAL CHARACTERISTICS

Symbol

I

CES

V

GE(th)

I

GES

C

ies

C

oes

C

res

Qg

V

CE(sat)

t

d(on)

tr

E

on(10%)

t

d(off)

tf

tf2

E

off(10%)

VEC

trr

t

Reverse recovery time

rr2

Collector cutoff current V

Gate-emitter threshold voltage V

Gate leakage current V

Input capacitance

Output capacitance

Reverse transfer capacitance

Total gate charge

Collector-emitter saturation voltage

Turn-on delay time

Turn-on rise time

Turn-on switching energy

Turn-off delay time

Turn-off fall time

Turn-off fall time

Turn-off switching energy

Emitter-collector voltage

Reverse recovery time

Item Conditions

Qrr Reverse recovery charge

E

Reverse recovery energy

rec(10%)

(Note 2), (Note 5)

Min Typ Max

= V

CE

CE

GE

, VGE = 0V

CES

= 10 V, IC = 40 mA, Tj = 25°C

= V

, VCE = 0V, Tj = 25°C

GES

Tj = 25°C

= 125°C

T

j

— — 7

— 20 60

5.0 6.0 7.0 V

−0.5 — 0.5 µA

— 82.0 — nF

= 10 V, VGE = 0 V, f = 100 kHz

V

CE

= 25°C

T

j

V

= 3600 V, IC = 400 A

CC

V

= ±15 V, Tj = 25 °C

GE

= 400 A

I

C

V

GE

V

CC

V

GE

= 125 °C, Ls = 170 nH

T

(Note 5)

(Note 5)

(Note 2)

(Note 2)

(Note 2)

(Note 2)

j

t

(IGBT_off)

V

CC

V

GE

= 125 °C, Ls = 170 nH

T

j

Inductive load

I

= 400 A

E

VGE = 0 V

V

CC

— 2.4 — µs

V

GE

= 125 °C, Ls = 170 nH

T

j

— 740 — µC

t

(IGBT_off)

(Note 4)

= 15 V

= 3600 V, IC = 400 A

= ±15 V, R

= 60 µs

G(on)

(Note 6)

= 3600 V, IC = 400 A

= ±15 V, R

G(off)

(Note 4)

= 3600 V, IE = 400 A

= ±15 V, R

= 60 µs

G(on)

(Note 6)

Tj = 25°C

T

= 125°C

j

= 15 Ω

, Inductive load

= 50 Ω

Tj = 25 °C

T

= 125 °C

j

= 15 Ω

, Inductive load

— 5.0 — nF

— 1.4 — nF

— 6.6 — µC

— 4.5 —

— 4.6 —

— 1.2 — µs

— 0.35 — µs

— 3.0 — J/P

— 8.2 — µs

— 0.5 — µs

— 3.1 — µs

— 2.7 — J/P

— 4.0 —

— 3.6 —

— 1.0 — µs

— 1.4 — J/P

Limits

Unit

mA

V

V

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES

HVM-1049-B 2 of 8

MITSUBISHI HVIGBT MODULES

CM400E4G-130H

th

3

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE

HIGH POWER SWITCHING USE

THERMAL CHARACTERISTICS

Symbol Item Conditions

Min Typ Max

R

Thermal resistance Junction to Case, IGBT part — — 21.0 K/kW

th(j-c)Q

Junction to Case, FWDi part — — 33.0 K/kW

R

Thermal resistance

th(j-c)R

R

Contact thermal resistance

th(c-f)

Junction to Case, Clamp-Di part — — 33.0 K/kW

Case to Fin,

λ

= 1W/m·K, D

grease

= 100 µm

(c-f)

— 9.0 — K/kW

Limits

Unit

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

Min Typ Max

Mt M8: Main terminals screw 7.0 — 15.0 N·m

Ms M6: Mounting screw 3.0 — 6.0 N·m

Mt

Mounting torque

M4: Auxiliary terminals screw 1.0 — 3.0 N·m

m Mass — 1.35 — kg

CTI Comparative tracking index 600 — — —

da Clearance 26.0 — — mm

Limits

Unit

ds Creepage distance 56.0 — — mm

Collector to Emitter — 27.0 — nH

L

Parasitic stray inductance

P CE

Anode to Cathode — 54.0 — nH

Tc = 25°C, Collector to Emitter — 0.19 — mΩ

R

Internal lead resistance

CC’+EE’

Note 1. Pulse width and repetition rate should be such that junction temperature (T
Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper,

T

= 25°C, Anode to Cathode — 0.38 — mΩ

c

) does not exceed T

j

rating (125°C).

opmax

anode to cathode clamp diode (Clamp-Di).

Note 3. Junction temperature (T
Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note 5. E

Note 6. t

IC

on(10%)

(IGBT_off)

/ E

/ E

off(10%)

definition is shown as follows.

) should not exceed T

j

are the integral of 0.1VCE x 0.1IC x dt.

rec(10%)

rating (150°C).

jmax

t

(IGBT_off)

time

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES

HVM-1049-B 3 of 8