Powerex CM400E3Y6-24NFH Data Sheet

CM400E3Y6-24NFH

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

M

K

N

P

H

B

(4 PLACES)

Q

LABEL

Di2

D

W W

Q

Di1

E2

NTC

F F

E

C2E1 E2 C1

Q

R

C

S T T U

W

X X X

Tr 2

C2E1

C1

G2

G

E2

H

E1

G1

G

J

V NUTS (3 PLACES)

Y

Z

AA

G2
E2

E1 (TH2)

G1 (TH1)

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0

B 2.44 62.0

C 1.18+0.4/-0.02 30.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 1.89±0.01 48.0±0.25

F 0.29 7.5

G 0.24 6.0

J 0.689 17.5

H 0.59 15.0

K 0.244 6.2

L 0.16 4.0

M 0.56 14.2

N 1.18 30.0

Dimensions Inches Millimeters

P 0.79 20.0

Q 0.28 7.0

R 0.26 Dia. Dia. 6.5

S 0.85 21.5

T 0.98 25.0

U 0.94 24.0

V M6 Metric M6

V 0.16 4.0

W 0.71 18.0

X 0.55 14.0

Y 0.02 0.5

Z 0.33 8.5

AA 0.87 22.2

Chopper IGBTMOD™
NFH-Series Module

400 Amperes/1200 Volts

L

Description:

Powerex IGBTMOD™ Modules
are designed for use high
frequency applications; 30 kHz for
hard switching applications and
60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low E
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ Power Supplies
£ Induction Heating
£ Welders

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM400E3Y6-24NFH is a 1200V
(V

CES

IGBTMOD™ Power Module.

SW(off)

Free-Wheel Diode

Heat Sinking

), 400 Ampere Chopper

Type Current Rating

V

CES

Amperes Volts (x 50)

CM 400 24

112/11 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM400E3Y6-24NFH
Chopper IGBTMOD™ NFH-Series Module

400 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Inverter IGBT/FWDi Part

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

1200 Volts

CES

±20 Volts

GES

Collector Current (Operation, TC = 25°C)*3 IC 400 Amperes

Collector Current (Pulse, Repetitive)*2 I

Total Power Dissipation (TC = 25°C)

*2,*3

P

Emitter Current (Operation, TC = 25°C)*3 I

Emitter Current (Pulse, Repetitive)*2 I

800 Amperes

CRM

2190 Watts

tot

*1

50 Amperes

E

*1

100 Amperes

ERM

Clamp Diode Part

Characteristics Symbol Rating Units

Repetitive Peak Reverse Voltage V

Forward Current (Operation, TC = 25°C)*3 IF 400 Amperes

Forward Current (Pulse, Repetitive)*2 I

1200 Volts

RRM

800 Amperes

FRM

Module

Characteristics Symbol Rating Units

Isolation Voltage (Charged Part to Baseplate, f= 60 Hz, AC 1 Minute) V

Maximum Junction Temperature T

Operating Junction Temperature T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location. The heatsink ther mal resistance should be measured just under the chips.

0 60.1

0

18.4

30.4

34.4

0 77.042.231.8

Each mark points to the center position of each chip.

Tr2: IGBT Di2: FWDi

Di1: ClampDi Th: NTC Thermistor

Th

Di1

Tr2Tr2

Di2

52.4

Di1

LABEL SIDE

0

24.4

34.5

j(max)

rating.

2500 V

ISO

+150 °C

j(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

rms

2 12/11 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM400E3Y6-24NFH
Chopper IGBTMOD™ NFH-Series Module

400 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Inverter IGBT/FWDi Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 400A, VGE = 15V, Tj = 125°C*4 — 5.0 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 1800 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 400A, VGE = ±15V, — — 100 ns

Turn-off Delay Time t

Fall Time tf — — 150 ns

Emitter-Collector Voltage V

Internal Lead Resistance R

Chip - Terminals

Internal Gate Resistance rg TC = 25°C — 0.8 — Ω

External Gate Resistance RG 0.78 — 7.8 Ω

VCE = V

CES

±VGE = V

GES

IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts

GE(th)

IC = 400A, VGE = 15V, Tj = 25°C*4 — 5.0 6.5 Volts

CE(sat)

— — 63 nF

ies

VCE = 10V, VGE = 0V — — 5.3 nF

oes

— — 1.2 nF

res

— — 300 ns

d(on)

RG = 0.78Ω, Inductive Load — — 500 ns

d(off)

*1

IE = 50A, VGE = 0V*4 — 2.8 3.8 Volts

EC

CC' + EE'

IC = 400A, TC = 25°C, — 0.53 — mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 1 µA

GES

Clamp Diode Part

Collector Cutoff Current I

Reverse Recovery Time trr VCC = 600V, IF = 400A, VGE = ±15V, — — 100 ns

Reverse Recovery Charge Qrr RG = 0.78Ω, Inductive Load — 7.0 — µC

Emitter-Collector Voltage VFM IF = 400A*4 — 5.5 7.0 Volts

Internal Lead Resistance R

Chip - Terminals

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VR = V

RRM

CC' + EE'

IF = 400A, TC = 25°C, — 0.53 — mΩ

— — 1 mA

RRM

312/11 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM400E3Y6-24NFH
Chopper IGBTMOD™ NFH-Series Module

400 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

NTC Thermistor Part

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R25 TC = 25°C*3 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R R

B Constant B

Approximate by Equation*5 — 3375 — K

(25/50)

= 493Ω, TC = 100°C*3 -7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C*3 — — 10 mW

Mechanical Characteristics

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Mounting Torque Ms Mounting, M6 Screw 31 35 40 in-lb

Weight m — 400 — Grams

Flatness of Baseplate ec On Centerline X, Y*6 -100 — +100 µm

Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Thermal Resistance, Junction to Case R

Contact Thermal Resistance, R

Case to Heatsink*2 per 1/2 Module

*3 Case temperature (TC) is measured on the surface (mounting side) of the baseplate just under the chips.
Refer to the figure to the right for chip location.

*5 B

(25/50)

R

R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
*6 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure.

= In(

R

25

)/( 1 –

50 T25 T50

1

)

+ CONVEX

– CONCAVE

Y

X

Q Per Inver ter IGBT*3 — — 0.057 K/W

th(j-c)

D Per Inverter FWDi*3 — — 0.430 K/W

th(j-c)

D Per ClampDi*3 — — 0.098 K/W

th(j-c)

Thermal Grease Applied, — 0.02 — K/W

th(c-s)

*3,*7

0 60.1

0

BOTTOM

18.4

30.4

34.4

3 mm

Th

Di1

Tr2Tr2

Di2

Di1

0

24.4

34.5

HEATSINK SIDE

HEATSINK SIDE

*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

– CONCAVE

+ CONVEX

0 77.042.231.8

Each mark points to the center position of each chip.

Tr2: IGBT Di2: FWDi

Di1: ClampDi Th: NTC Thermistor

52.4

LABEL SIDE

4 12/11 Rev. 0