Powerex CM400DY-24NF Data Sheet
CM400DY-24NF
A
W
FF
B
N
J
L
(4 PLACES)
D
M NUTS
(3 PLACES)
G
G
H
KKK
P P
P
T THICK
U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
T
C
MEASURED POINT
(BASEPLATE)
LABEL
C2E1 E2 C1
G2
E2
E1
G1
E
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
J 0.81 20.5
K 0.55 14.0
L 0.26 Dia. Dia. 6.5
Dimensions Inches Millimeters
M M6 Metric M6
N 1.18 30.0
P 0.71 18.0
Q 0.28 7.0
R 0.83 21.2
S 0.33 8.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
W 0.85 21.5
Dual IGBTMOD™
NF-Series Module
400 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the heat
sinking baseplate, offering simplified system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire from the table below -i.e.
CM400DY-24NF is a 1200V
(V
CES
MOD™ Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 400 24
CE(sat)
Free-Wheel Diode
Heat Sinking
), 400 Ampere Dual IGBT-
V
CES
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DY-24NF
Dual IGBTMOD™ NF-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400DY-24NF Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current*** (DC, TC´ = 111°C) IC 400 Amperes
Peak Collector Current ICM 800* Amperes
Emitter Current** (TC = 25°C) IE 400 Amperes
Peak Emitter Current** IEM 800* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1470 Watts
Mounting Torque, M6 Main Terminal — 40 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
–40 to 125 °C
stg
1200 Volts
CES
±20 Volts
GES
2500 Volts
ISO
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
VCE = V
CES
VGE = V
GES
IC = 40mA, VCE = 10V 6.0 7.0 8.0 Volts
GE(th)
IC = 400A, VGE = 15V, Tj = 25°C — 1.8 2.5 Volts
CE(sat)
, VGE = 0V — — 1.0 mA
CES
, VCE = 0V — — 0.5 µA
GES
IC = 400A, VGE = 15V, Tj = 125°C — 2.0 — Volts
Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 2700 — nC
Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V — — 3.2 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr VCC = 600V, IC = 400A, — — 160 ns
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load — — 350 ns
Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns
Diode Reverse Recovery Charge** Qrr IE = 400A — 20 — µC
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC´ measured point is just under the chips. If this value is used, R
— — 94 nf
ies
VCE = 10V, VGE = 0V — — 8.0 nf
oes
— — 1.8 nf
res
— — 600 ns
d(on)
d(off)
V
= V
GE1
should be measured just under the chips.
th(f-a)
= 15V, RG = 0.73Ω, — — 700 ns
GE2
j(max)
rating.
2
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