Powerex CM400DY-24A Data Sheet
CM400DY-24A
A
W
FF
B
N
J
L
(4 PLACES)
D
M NUTS
(3 PLACES)
G
G
H
KKK
PPP
T THICK
U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
LABEL
C2E1 E2 C1
G2
E2
E1
G1
E
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual IGBTMOD™
A-Series Module
400 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the heat
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.4/-0.002 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
J 0.81 20.5
K 0.55 14.0
L 0.26 Dia. Dia. 6.5
Rev. 10/07 1
Dimensions Inches Millimeters
M M6 Metric M6
N 1.18 30.0
P 0.71 18.0
Q 0.28 7.0
R 0.83 21.2
S 0.33 8.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
W 0.85 21.5
sinking baseplate, offering simplified system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire from the table below -i.e.
CM400DY-24A is a 1200V (V
400 Ampere Dual IGBTMOD™
Power Module
Type Current Rating
Amperes Volts (x 50)
CM 400 24
),
CES
V
CES
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM400DY-24A
Dual IGBTMOD™ A-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM400DY-24A Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (DC, TC = 87°C*) IC 400 Amperes
Peak Collector Current ICM 800** Amperes
Emitter Current*** (TC = 25°C) IE 400 Amperes
Peak Emitter Current*** IEM 800** Amperes
Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 2710 Watts
Mounting Torque, M6 MainTerminal — 40 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
–40 to 125 °C
stg
1200 Volts
CES
±20 Volts
GES
2500 Volts
ISO
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
I
V
CES
V
GES
I
GE(th)
I
CE(sat)
CE
GE
= 40mA, VCE = 10V 6.0 7.0 8.0 Volts
C
= 400A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts
C
= 400A, VGE = 15V, Tj = 125°C — 2.4 — Volts
C
= V
, VGE = 0V — — 1.0 mA
CES
= V
, VCE = 0V — — 0.5 µA
GES
Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 2000 — nC
Emitter-Collector Voltage** VEC I
= 400A, VGE = 0V — — 3.8 Volts
E
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr V
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load — — 350 ns
Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns
Diode Reverse Recovery Charge** Qrr I
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
— — 70 nf
ies
V
oes
— — 1.4 nf
res
— — 550 ns
d(on)
V
d(off)
GE1
= 10V, VGE = 0V — — 6.0 nf
CE
= 600V, IC = 400A, — — 180 ns
CC
= V
= 15V, RG = 0.78Ω, — — 600 ns
GE2
= 400A — 16 — µC
E
rating.
j(max)
Rev. 10/072
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