Powerex CM400DY-12NF Data Sheet

CM400DY-12NF

A

XW

FF

B

N

L

(4 PLACES)

D

M NUTS
(3 PLACES)

G

G

H

KKK

P P

P

T THICK
U WIDTH

QQ

V

C

S

R

G2

E2

E1

G1

C1E2C2E1

T

C

MEASURED POINT

(BASEPLATE)

LABEL

C2E1 E2 C1

G2

E2

E1

G1

E

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

Dual IGBTMOD™
NF-Series Module

400 Amperes/600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge conguration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the heat
sinking baseplate, offering simpli­ed system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V

CE(sat)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0

B 2.44 62.0

C 1.18+0.04/-0.02 30.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 1.89±0.01 48.0±0.25

F 0.98 25.0

G 0.24 6.0

H 0.59 15.0

K 0.55 14.0

L 0.26 Dia. Dia. 6.5

M M6 Metric M6

Dimensions Inches Millimeters

N 1.18 30.0

P 0.71 18.0

Q 0.28 7.0

R 0.87 22.2

S 0.33 8.5

T 0.02 0.5

U 0.110 2.8

V 0.16 4.0

W 0.85 21.5

X 0.94 24.0

£ AC Motor Control
£ UPS
£ Battery Powered Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM400DY-12NF is a 600V (V
400 Ampere Dual IGBTMOD™

Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 400 12

CES

V

CES

),

1

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

3

CM400DY-12NF
Dual IGBTMOD™ NF-Series Module

400 Amperes/600 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DY-12NF
Dual IGBTMOD™ NF-Series Module

400 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM400DY-12NF Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V
Collector Current*** (DC, T

' = 92°C) I

C

–40 to 125 °C

stg

600 Volts

CES

±20 Volts

GES

C

400 Amperes

Peak Collector Current ICM 800* Amperes

Emitter Current** (TC = 25°C) IE 400 Amperes

Peak Emitter Current** IEM 800* Amperes

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts

Mounting Torque, M6 Main Terminal — 40 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 400 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

.

2500 Volts

ISO

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 400A, VGE = 15V, Tj = 125°C — 1.7 — Volts

Total Gate Charge QG VCC = 300V, IC = 400A, VGE = 15V — 1600 — nC

Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V — — 2.6 Volts

VCE = V

CES

VGE = V

GES

IC = 40mA, VCE = 10V 5.0 6.0 7.5 Volts

GE(th)

IC = 400A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts

CE(sat)

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 0.5 µA

GES

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

— — 60 nf

ies

VCE = 10V, VGE = 0V — — 7.3 nf

oes

— — 2.4 nf

res

— — 300 ns

d(on)

Load Rise Time tr VCC = 300V, IC = 400A, — — 200 ns

Switch Turn-off Delay Time t

d(off)

V

GE1

= V

= 15V, RG = 3.1Ω, — — 450 ns

GE2

Time Fall Time tf Inductive Load — — 300 ns

Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns

Diode Reverse Recovery Charge** Qrr IE = 400A — 6.8 — µC

*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)

***Tc' measured point is just under the chips. If this vaule is used, Rth(f-a) should be measured just under the chips .

j(max)

rating.

2

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

2

10

1

10

0

10

-1

10

1

0 1 3 42 5

10

1

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

6 8

10 1412 16 18 20

8

6

4

2

0

Tj = 25°C

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS

)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

4

3

0

200

600

2

1

0

800

VGE = 15V

Tj = 25°C
Tj = 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 800A

IC = 400A

IC = 160A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 2 4 6 8 10

200

0

VGE =

20V

10

11

12

15

13

9

8

Tj = 25

o

C

400

600

800

400

10

-1

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

0

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive Load

t

f

10

3

Tj = 25°C
Tj = 125°C

CM400DY-12NF
Dual IGBTMOD™ NF-Series Module

400 Amperes/600 Volts

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

TC Reference Point Under Chips

Contact Thermal Resistance R

External Gate Resistance RG 1.6 — 16 Ω

Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W

th(j-c)

D Per FWDi 1/2 Module, TC Reference — — 0.19 °C/W

th(j-c)

'Q Per IGBT 1/2 Module, — — 0.066 °C/W

th(j-c)

Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W

th(c-f)

3

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
TC = 25°C
Per Unit Base =
R

th(j-c)

=

0.11°C/W
(IGBT)
R

th(j-c)

=

0.19°C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

500 1000 1500 25002000

VCC = 300V

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
Inductive Load

VCC = 200V

IC = 400A

10

3

COLLECTOR CURRENT,

IC, (AMPERES)

SWITCHING LOSS, E

SW( on)

, E

SW( off)

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus

VCC = 300V
VGE = ±15V
IC = 400A
Tj = 125°C
Inductive Load
C Snubber at Bus

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT (TYPICAL)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

SW( on)

, E

SW( off)

, (mJ/PULSE)

10

2

10

0

10

1

10

1

10

0

10

2

SWITCHING LOSS VS.

GATE RESISTANCE (TYPICAL)

E

SW(on)

E

SW(off)

E

SW(on)

E

SW(off)

I

rr

t

rr

CM400DY-12NF
Dual IGBTMOD™ NF-Series Module

400 Amperes/600 Volts

4