Powerex CM400DY-12NF Data Sheet
CM400DY-12NF
A
XW
FF
B
N
L
(4 PLACES)
D
M NUTS
(3 PLACES)
G
G
H
KKK
P P
P
T THICK
U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
T
C
MEASURED POINT
(BASEPLATE)
LABEL
C2E1 E2 C1
G2
E2
E1
G1
E
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
NF-Series Module
400 Amperes/600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge conguration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the heat
sinking baseplate, offering simplied system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.18+0.04/-0.02 30.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.89±0.01 48.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
K 0.55 14.0
L 0.26 Dia. Dia. 6.5
M M6 Metric M6
Dimensions Inches Millimeters
N 1.18 30.0
P 0.71 18.0
Q 0.28 7.0
R 0.87 22.2
S 0.33 8.5
T 0.02 0.5
U 0.110 2.8
V 0.16 4.0
W 0.85 21.5
X 0.94 24.0
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM400DY-12NF is a 600V (V
400 Ampere Dual IGBTMOD™
Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 400 12
CES
V
CES
),
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
CM400DY-12NF
Dual IGBTMOD™ NF-Series Module
400 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DY-12NF
Dual IGBTMOD™ NF-Series Module
400 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol CM400DY-12NF Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current*** (DC, T
' = 92°C) I
C
–40 to 125 °C
stg
600 Volts
CES
±20 Volts
GES
C
400 Amperes
Peak Collector Current ICM 800* Amperes
Emitter Current** (TC = 25°C) IE 400 Amperes
Peak Emitter Current** IEM 800* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts
Mounting Torque, M6 Main Terminal — 40 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
.
2500 Volts
ISO
Static Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
IC = 400A, VGE = 15V, Tj = 125°C — 1.7 — Volts
Total Gate Charge QG VCC = 300V, IC = 400A, VGE = 15V — 1600 — nC
Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V — — 2.6 Volts
VCE = V
CES
VGE = V
GES
IC = 40mA, VCE = 10V 5.0 6.0 7.5 Volts
GE(th)
IC = 400A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts
CE(sat)
, VGE = 0V — — 1.0 mA
CES
, VCE = 0V — — 0.5 µA
GES
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
— — 60 nf
ies
VCE = 10V, VGE = 0V — — 7.3 nf
oes
— — 2.4 nf
res
— — 300 ns
d(on)
Load Rise Time tr VCC = 300V, IC = 400A, — — 200 ns
Switch Turn-off Delay Time t
d(off)
V
GE1
= V
= 15V, RG = 3.1Ω, — — 450 ns
GE2
Time Fall Time tf Inductive Load — — 300 ns
Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns
Diode Reverse Recovery Charge** Qrr IE = 400A — 6.8 — µC
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
***Tc' measured point is just under the chips. If this vaule is used, Rth(f-a) should be measured just under the chips .
j(max)
rating.
2
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