POWEREX CM400DU-5F Datasheet

CM400DU-5F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

EB

S - NUTS

(3 TYP)

C

CM

C2E1 E2

K

TC MEASURE POINT

A
D

C

L

Q

T - (4 TYP.)

G2
E2
E1

G1

C1

PQ

KK

U

N

R

M

L

H

J

H

F

G

Trench Gate Design
Dual IGBTMOD™

400 Amperes/ 250 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recover y free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

C2E1

E2

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

G2
E2

C1

E1
G1

Dimensions Inches Millimeters

L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6

T 0.26 Dia. 6.5 Dia.
U 0.002 0.05

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

Free-Wheel Diode

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400DU-5F is a
250V (V

), 400 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 400 5

CES

1

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DU-5F
Trench Gate Design Dual IGBTMOD™

400 Amperes/250 Volts

Absolute Maximum Ratings, T

= 25 °C unless otherwise specified

j

Ratings Symbol CM400DU-5F Units

Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

-40 to 150 °C

-40 to 125 °C
250 Volts
±20 Volts
400 Amperes

800* Amperes

400 Amperes

800* Amperes

890 Watts

Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Static Electrical Characteristics, T

= 25 °C unless otherwise specified

j

iso

j(max)

2500 Volts

rating.

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 40mA, VCE = 10V 3.0 4.0 5.0 Volts

IC = 400A, VGE = 10V, Tj = 25°C– 1.2 1.7 Volts

IC = 400A, VGE = 10V, Tj = 125°C– 1.1 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

Dynamic Electrical Characteristics, T

G

EC

= 25 °C unless otherwise specified

j

VCC = 100V, IC = 400A, VGE = 10V – 1500 – nC

IE = 400A, VGE = 0V – – 2.0 Volts

rating.

j(max)

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes VCE
res

d(on)

r

d(off)

f

rr

rr

Thermal and Mechanical Characteristics, T

= 10V, V

= 0V – – 7.0 nf

GE

VCC = 100V, IC = 400A, – – 850 ns

V

= V

GE1

= 10V, – – 400 ns

GE2

RG = 6.3⍀, Resistive – – 1100 ns

Load Switching Operation – – 500 ns

IE = 400A – – 300 ns
IE = 400A – 16.0 – µC

= 25 °C unless otherwise specified

j

––110 nf

––3.8 nf

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

* TC measured point is just under chip.

2

2

QPer IGBT 1/2 Module – – 0.14 °C/W

th(j-c)

DPer FWDi 1/2 Module – – 0.24 °C/W

th(j-c)

QPer IGBT 1/2 Module* – – 0.08 °C/W

th(j-c´)

th(c-f)

Per Module, Thermal Grease Applied – 0.04 – °C/W