CM400DU-34KA
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
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Outline Drawing and Circuit Diagram
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TC MEASURED POINT
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LABEL
D
Dual IGBTMOD™
KA-Series Module
400 Amperes/ 1700 Volts
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal
management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Dimensions Inches Millimeters
A 5.51 140.0
B 5.12 130.0
C 5.12 130.0
D 1.38 35.0
E 4.33 110.0
F 4.33 110.0
G 0.39 10.0
H 0.45 11.5
J 0.54 13.8
K 1.72 43.8
L 1.42 36.0
M 0.39 10.0
N 0.80 20.4
Dimensions Inches Millimeters
P 0.57 14.5
Q 1.57 40.0
R 2.56 65.0
SM8 M8
T 0.26 Dia. 6.5 Dia.
S 0.32 8.0
V 0.97 24.5
WM4 M4
X 0.59 15.0
Y 0.35 9.0
Z 1.02 26.0
AA 0.79 20.0
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400DU-34KA is
a 1700V (V
), 400 Ampere
CES
Dual IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 400 34
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-34KA
Dual IGBTMOD™ KA-Series Module
400 Amperes/1700 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400DU-34KA Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M8 Main Ter minal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
G(E) Terminal, M4 – 15 in-lb
Weight – 1200 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1700 Volts
±20 Volts
400 Amperes
800* Amperes
400 Amperes
800* Amperes
1950 Watts
3500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 40mA, VCE = 10V 4.0 5.5 7.0 Volts
IC = 400A, VGE = 15V, Tj = 25°C– 3.2 4.1 Volts
IC = 400A, VGE = 15V, Tj = 125°C– 3.8 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
G
EC
VCC = 1000V, IC = 400A, VGE = 15V – 1800 – nC
IE = 400A, VGE = 0V, Tj = 25°C– –4.6 Volts
IE = 400A, VGE = 0V, Tj = 125°C– 2.2 – Volts
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 9.6 nf
VCC = 1000V, IC = 400A, – – 1000 ns
V
= V
GE1
GE2
RG = 1.0⍀, Resistive – – 1000 ns
Inductive Load – – 800 ns
Switching Operation – – 600 ns
IE = 400A – 18.9 – µC
= 15V, – – 300 ns
––57.0 nf
––3.0 nf
2
2