Powerex CM400DU-24NFH Data Sheet

CM400DU-24NFH
TC MEASUREMENT POINT
MM
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
A
D
L
G2E2E1G1
E
U
W
Y
L
T - (4 TYP)
C
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.01 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.83 21.2
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
L 0.35 9.0
M 0.33 8.5
N 0.69 17.5
C2E1 C1
S - NUTS (3 TYP)
AA Z K
C2E1
LABEL
E2
E2
AA Z K
PQQ
Z K
G2 E2
C1
E1 G1
Dimensions Inches Millimeters
P 0.85 21.5
Q 0.98 25.0
R 0.86 21.75
S M6 Metric M6
T 0.26 Dia. 6.5 Dia.
U 0.4 10.0
V 0.02 0.5
W 0.87 22.2
X 0.72 18.25
Y 0.36 9.25
Z 0.71 18.0
AA 0.28 7.0
V
H
J
N
V
B
H
R
V
V
X
G
M
F
Dual IGBTMOD™ NFH-Series Module
400 Amperes/1200 Volts
Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
£ Low E £ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ Power Supplies £ Induction Heating £ Welders
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM400DU-24NFH is a 1200V (V
CES
IGBTMOD™ Power Module.
Type Current Rating Amperes Volts (x 50)
CM 400 24
SW(off)
Free-Wheel Diode
Heat Sinking
), 400 Ampere Dual
V
CES
13/11 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM400DU-24NFH Dual IGBTMOD™ NFH-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied
Ratings Symbol CM400DU-24NFH Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current (TC = 25°C) IC 400* Amperes
Peak Collector Current ICM 800* Amperes
Emitter Current** (TC = 25°C) IE 400* Amperes
Peak Emitter Current** IEM 800* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1040 Watts
Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 2500 Watts
Mounting Torque, M6 Main Terminal 40 in-lb
Mounting Torque, M6 Mounting 40 in-lb
Weight 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
–40 to 125 °C
stg
1200 Volts
CES
±20 Volts
GES
2500 Volts
ISO
Static Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
IC = 400A, VGE = 15V, Tj = 125°C 5.0 Volts
Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V 1800 nC
Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V 3.5 Volts
VCE = V
CES
VGE = V
GES
IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts
GE(th)
IC = 400A, VGE = 15V, Tj = 25°C 5.0 6.5 Volts
CE(sat)
, VGE = 0V 1.0 mA
CES
, VCE = 0V 1.4 µA
GES
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr VCC = 600V, IC = 400A, 100 ns
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load 150 ns
Diode Reverse Recovery Time** trr Switching Operation, 250 ns
Diode Reverse Recovery Charge** Qrr IE = 400A 16 µC
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
63 nF
ies
VCE = 10V, VGE = 0V 5.3 nF
oes
1.2 nF
res
— — 300 ns
d(on)
d(off)
V
GE1
= V
= 15V, RG = 0.78Ω, 500 ns
GE2
rating.
j(max)
2 3/11 Rev. 1
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