POWEREX CM400DU-24F Datasheet
CM400DU-24F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
F
C
C2E1
L
Z
E2
RTC
M
R
C
E
AA
S - (3 PLACES)
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A5.51 140.0
B5.12 130.0
C5.12 130.0
D 1.38 +0/-0.02 35.0 +0/-0.5
E 4.33±0.01 110.0±0.25
F 4.33±0.01 110.0±0.25
G0.39 10.0
H0.45 11.5
J0.54 13.8
K1.72 43.8
L1.42 36.0
M0.39 10.0
N0.80 20.4
G
C1
E1 G1 E2 G2
E2
RTC
Dimensions Inches Millimeters
P 0.57 14.5
Q 1.57 40.0
R 2.56 65.0
SM8 M8
T 0.32 8.0
U 0.32 8.0
V 0.97 +0.04/-0.02 24.5 +1.0/-0.5
WM4 M4
X 0.59 15.0
Y 0.35 9.0
Z 1.02 26.0
AA 0.79 20.0
TC MEASURED POINT
T - (4 TYP.)
N
P
C
Q
L
X
Y
P
W (4 PLACES)
HJKL
V
U
G2
E2
C1
E1
G1
LABEL
D
Dual IGBTMOD™
F-Series Module
400 Amperes/ 1200 Volts
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal
management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400DU-24F is a
1200V (V
IGBTMOD™ Power Module.
Type Amperes Volts (x 50)
CM 400 24
CE(sat)
Free-Wheel Diode
Heat Sinking
), 400 Ampere Dual
CES
Current Rating V
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-24F
Dual IGBTMOD™ F-Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400DU-24F Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M8 Main Ter minal – 95 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
G(E) Terminal, M4 – 15 in-lb
Weight – 1200 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
400 Amperes
800* Amperes
400 Amperes
800* Amperes
1100 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
Total Gate Charge Q
Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES
GES
GE(th)
CE(sat)
G
EC
VCE = V
VGE = V
, VGE = 0V – – 2 mA
CES
, VCE = 0V – – 80 µA
CES
IC = 40mA, VCE = 10V 5.0 6 7.0 Volts
IC = 400A, VGE = 15V, Tj = 25°C– 1.8 2.4 Volts
IC = 400A, VGE = 15V, Tj = 125°C– 1.9 – Volts
VCC = 600V, IC = 400A, VGE = 15V – 4400 – nC
IE = 400A, VGE = 0V – – 3.2 Volts
rating.
j(max)
2
2
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