POWEREX CM400DU-12NFH Datasheet
CM400DU-12NFH
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
T - (4 TYP.)
G2
E2
E1
G1
C1
PQ Q
KK
U
N
R
M
L
C1
H
J
H
G2
E2
E1
G1
F
G
EB
S - NUTS
(3 TYP)
C
CM
C2E1 E2
K
C2E1
A
D
C
L
E2
High Frequency
Dual IGBTMOD™
400 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and interconnects are isolated from the
heat sinking base plate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ High Frequency Switching
□ Isolated Base Plate for Easy
CE(sat)
(50kHz to 60kHz)
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A4.25 108.0
B2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F0.67 17.0
G0.16 4.0
H0.24 6.0
J0.59 15.0
K0.55 14.0
Dimensions Inches Millimeters
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
SM6 M6
T M6.5 M6.5
U 0.02 0.5
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400DU-12NFH is
a 600V (V
), 400 Ampere High
CES
Power Dual Module.
Current Rating V
Type Amperes Volts (x 50)
CM 400 12
CES
1
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400DU-12NFH
High Frequency Dual IGBTMOD™
400 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM400DU-12NFH Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P
Maximum Collector Dissipation (Tj < 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
c'
Mounting Torque, M6 Main Ter minal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
400 Amperes
800* Amperes
400 Amperes
800* Amperes
960 Watts
1640 Watts
2500 Volts
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 40mA, VCE = 10V 5 6 7 Volts
IC = 400A, VGE = 15V, Tj = 25°C– 2.0 2.7 Volts
IC = 400A, VGE = 15V, Tj = 125°C– 1.95 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
G
EC
VCC = 300V, IC = 400A, VGE = 15V – 2480 – nC
IE = 400A, VGE = 0V – – 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time* t
Diode Reverse Recovery Charge* Q
* Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 7.2 nF
VCC = 300V, IC = 400A, – – 400 ns
V
= V
GE1
GE2
RG = 3.1⍀, Inductive – – 700 ns
Load Switching Operation – – 150 ns
IE = 400A – – 200 ns
= 15V, – – 200 ns
––110 nF
––4.0 nF
– 7.7 – µC
2
2
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