POWEREX CM400DU-12H Datasheet

CM400DU-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

T - (4 TYP.)

G2
E2
E1

G1

C1

PQ Q

KK

U

N

R

M

L

C1

H

J

H

G2
E2

E1
G1

F

G

EB

S - NUTS

(3 TYP)

C

CM

C2E1 E2

K

C2E1

A
D

C

L

E2

Dual IGBTMOD™
U-Series Module

400 Amperes/ 600 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter­connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.67 17.0
G 0.16 4.0
H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

Dimensions Inches Millimeters

L 0.87 22.0
M 0.33 8.5
N 0.10 2.5

P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8

SM6M6

T0.26 Dia. 6.5 Dia.
U 0.002 0.05

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400DU-12H is a
600V (V

), 400 Ampere Dual

CES

IGBTMOD™ Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 400 12

CES

37

37

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM400DU-12H
Dual IGBTMOD™ U-Series Module

400 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM400DU-12H Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Ter minal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
600 Volts
±20 Volts
400 Amperes

800* Amperes

400 Amperes

800* Amperes
1130 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 40mA, VCE = 10V 4.5 6 7.5 Volts

IC = 400A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts

IC = 400A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 300V, IC = 400A, VGE = 15V – 800 – nC

IE = 400A, VGE = 0V – – 2.6 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switch Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 19.2 nf

VCC = 300V, IC = 400A, – – 250 ns

V

= V

GE1

= 15V, – – 600 ns

GE2

RG = 1.6V, Resistive – – 350 ns

Load Switching Operation – – 300 ns
IE = 400A, diE/dt = -800A/µs – – 160 ns
IE = 400A, diE/dt = -800A/µs – 0.96 – µC

– – 35.2 nf

– – 5.2 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

38

38

Q Per IGBT 1/2 Module – – 0.11 °C/W

th(j-c)

D Per FWDi 1/2 Module – – 0.18 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.020 – °C/W