Powerex CM400C1Y-24S Data Sheet

CM400C1Y-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

www.pwrx.com

A

D

K

E2

M

(3 PLACES)

FF

Q

P P P

E2

Q

LABEL

Di1

Tr1

K

G

G2

E2

C1

E1
G1

Z

U

G2

E2 (Es2)

C1

E1 (Es1)
G1

G

V

W

S

H

N

AB (TAB #110)

R

Tolerance Otherwise Specified

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

V

J

X

AA

(4 PLACES)

B

C2E1

L

K

E

C

T

Tr2

C2E1

Di2

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0

B 3.15 80.0

C 1.14+0.04/-0.02 29.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 2.44±0.01 62.0±0.25

F 0.98 25.0

G 0.24 6.0

H 0.59 15.0

J 0.81 20.5

K 0.55 14.0

L 0.26 Dia. 6.5 Dia.

M M6 Metric M6

Dimensions Inches Millimeters

Q 0.28 7.0

R 0.84 21.2

S 0.33 8.5

T 1.10 28.0

U 0.16 4.0

V 0.11 2.8

W 0.29 7.5

X 0.21 5.3

Y 0.26 6.7

Z 0.85 21.5

AA 0.47 12.0

AB t = 0.02 t = 0.5

N 1.18 30.0

P 0.71 18.0

Dual (AC Switch)
IGBT S-Series Module

350 Amperes/1200 Volts

Description:

Y

Powerex Dual IGBT Module in a
common collector AC Switch
configuration. Each module
consists of two IGBTs in an AC
Switch configuration with each
IGBT having an anti-parallel
connected super-fast recovery
diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£

CE(sat)

Super-Fast Recovery
Anti-parallel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ AC Motor Control
£ UPS
£ Photovoltaic
£ Wind Power

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM400C1Y-24S is a
1200V (V
AC Switch IGBT Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 350 24

), 350 Ampere Dual

CES

CES

05/14 Rev. 1

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module

350 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (G-E Short-Circuited) V

Gate-Emitter Voltage (C-E Short-Circuited) V

Collector Current (DC, TC = 124°C)

*2,*4

IC 350 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

Emitter Current

*2,*4

I

*2,*4

P

Emitter Current (Pulse, Repetitive)*3 I

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature T

Maximum Case Temperature*2 T

Operating Junction Temperature T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

0

30.7

44.2

24.6

0

37.8

Tr2

Tr2

Di2

Di2

1200 Volts

CES

±20 Volts

GES

800 Amperes

CRM

2670 Watts

tot

*1

350 Amperes

E

*1

800 Amperes

ERM

2500 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(opr)

-40 to +125 °C

stg

79.0

65.8

0

Di1

Tr1

Di1

Tr1

35.3

48.8

Tr1/Tr2: IGBT Di1/Di2: FWDi

LABEL SIDE

2

05/14 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM400C1Y-24S
Dual (AC Switch) IGBT S-Series Module

350 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 400A, VGE = 15V, Tj = 125°C*5 — 2.05 — Volts

IC = 400A, VGE = 15V, Tj = 150°C*5 — 2.10 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 400A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts

IC = 400A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 934 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 400A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Emitter-Collector Voltage V

(Terminal) IE = 400A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts

IE = 400A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts

Emitter-Collector Voltage V

(Chip) IE = 400A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts

IE = 400A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 400A, — 39.8 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Gate Resistance rg Per Switch — 4.9 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 40mA, VCE = 10V 5.4 6.0 6.6 Volts

GE(th)

IC = 400A, VGE = 15V, Tj = 25°C*5 — 1.85 2.30 Volts

CE(sat)

IC = 400A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts

CE(sat)

— — 40 nF

ies

VCE = 10V, G-E Short-Circuited — — 8.0 nF

oes

— — 0.66 nF

res

— — 800 ns

d(on)

RG = 0Ω, Inductive Load — — 600 ns

d(off)

*1

IE = 400A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts

EC

*1

IE = 400A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts

EC

*1

VCC = 600V, IE = 400A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 21.4 — µC

rr

VGE = ±15V, RG = 0Ω, — 44.9 — mJ

off

*1

Tj = 150°C, Inductive Load — 35.2 — mJ

rr

, G-E Short-Circuited — — 1 mA

CES

, C-E Short-Circuited — — 0.5 µA

GES

05/14 Rev. 1

3