0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
V
J
X
AA
(4 PLACES)
B
C2E1
L
K
E
C
T
Tr2
C2E1
Di2
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14+0.04/-0.02 29.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.98 25.0
G 0.24 6.0
H 0.59 15.0
J 0.81 20.5
K 0.55 14.0
L 0.26 Dia. 6.5 Dia.
M M6 Metric M6
Dimensions Inches Millimeters
Q 0.28 7.0
R 0.84 21.2
S 0.33 8.5
T 1.10 28.0
U 0.16 4.0
V 0.11 2.8
W 0.29 7.5
X 0.21 5.3
Y 0.26 6.7
Z 0.85 21.5
AA 0.47 12.0
AB t = 0.02 t = 0.5
N 1.18 30.0
P 0.71 18.0
Dual (AC Switch)
IGBT S-Series Module
350 Amperes/1200 Volts
Description:
Y
Powerex Dual IGBT Module in a
common collector AC Switch
configuration. Each module
consists of two IGBTs in an AC
Switch configuration with each
IGBT having an anti-parallel
connected super-fast recovery
diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
£
CE(sat)
Super-Fast Recovery
Anti-parallel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ UPS
£ Photovoltaic
£ Wind Power
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400C1Y-24S is a
1200V (V
AC Switch IGBT Power Module.
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (G-E Short-Circuited) V
Gate-Emitter Voltage (C-E Short-Circuited) V
Collector Current (DC, TC = 124°C)
*2,*4
IC 350 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
Emitter Current
*2,*4
I
*2,*4
P
Emitter Current (Pulse, Repetitive)*3 I
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature T
Maximum Case Temperature*2 T
Operating Junction Temperature T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 400A, — 39.8 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Gate Resistance rg Per Switch — 4.9 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Flatness of Baseplate ec On Centerline X, Y*7 -100 — +100 µm
Recommended Operating Conditions, Ta = 25°C
Characteristics Symbol Test Conditions Min. Typ. Max. Units
(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts
Gate (-Emitter Drive) Voltage V
External Gate Resistance RG Per Switch 0 — 10 Ω
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
Y
X
– CONCAVE
+ CONVEX
Q Per IGBT — — 56 K/kW
th(j-c)
D Per IFWDi — — 95 K/kW
th(j-c)
Thermal Grease Applied — 18 — K/kW
th(c-s)
*6
Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts