POWEREX CM350DU-5F Datasheet

CM350DU-5F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

Point

B

E

R

R

MPP

G

M

K 4 - Mounting
Holes

H

J

H

0.110 - 0.5 Tab

N

Q

C

D

F

3 - M6 NUTS

L

CM

T

Measured

C

M

Trench Gate Design
Dual IGBTMOD™

350 Amperes/ 250 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con­sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse­connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0
B 3.66±0.01 93.0±0.25
C 3.15 80.0
D 2.44±0.01 62.0±0.25
E 0.55 14.0
F 0.86 21.75
G 0.94 24.0
H 0.24 6.0

E2

G2
E2

C1

E1
G1

Dimensions Inches Millimeters

J 0.59 15.0
K 0.26 Dia. 6.5 Dia.
L 1.14 +0.04/-0.02 29 +1.0/-0.5

M 0.71 18.0
N 0.33 8.5

P 0.28 7.0

Q 0.83 21.0
R 0.98 25.0

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast Recovery

Free-Wheel Diode

□ High Frequency Operation

(15-20kHz)

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ DC Motor Control
□ Boost Regulator

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM350DU-5F is a
250V (V

), 350 Ampere Trench

CES

Gate Design Dual IGBTMOD™
Power Module.

Current Rating V

Type Amperes Volts (x 50)

CM 350 5

CES

361

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM350DU-5F
Trench Gate Design Dual IGBTMOD™

350 Amperes/250 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM350DU-5F Units

Junction T emper ature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Terminal – 26 in-lb
Mounting Torque, M6 Mounting – 26 in-lb
Weight – 520 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
250 Volts
±20 Volts
350 Amperes
700 Amperes
350 Amperes

700* Amperes

960 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff CurrentI
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

CES

IC = 35mA, VCE = 10V 3.0 4.0 5.0 Volts

IC = 350A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts

IC = 350A, VGE = 10V, Tj = 125°C – 1.10 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 100V, IC = 350A, VGE = 10V – 1320 – nC

IE = 350A, VGE = 0V – – 2.0 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)VCC

Load Rise Time t
Switch Turn-off Delay Time t

d(off)RG

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 4.5 nf

= 100V, IC = 350A,––1100ns

V

= V

GE1

= 10V, – – 2400 ns

GE2

= 7.1Ω, Resistive––900ns

Load Switching Operation – – 500 ns
IE = 350A, diE/dt = -700A/ms – – 300 ns
IE = 350A, diE/dt = -700A/ms – 5.7 – µC

––99nf

– – 3.4 nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – 0.010 – °C/W

Per IGBT – – 0.13 °C/W

Per Free-Wheel Diode – – 0.19 °C/W

362