POWEREX CM30TF-24H Datasheet
CM30TF-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
C
BuPEuPBvPEvPBwPEwP
P
EJ
N
N
S - DIA.
(2 TYP.)
G
P
P
(BuP)*
GuP
EuP
u
(BuN)
GuN
EuN
N
* Parentheses indicate module marking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.0 127.0
B 4.33±0.01 110.0±0.3
C 3.86 98.0
D 2.20 56.0
E 1.57 40.0
F 1.12 28.5
G 1.04 26.5
H 1.01 25.6
J 0.98 25.0
uvw
B
uNEu
R
(BvP)
GvP
(BvN)
GvN
NBvNEvNBwNEwN
F F KM
R
L
.250 TAB
EvP
v
EvN
Dimensions Inches Millimeters
R
L
(BwP)
(BwN)
K 0.85 21.5
L 0.83 21.0
M 0.75 19.0
N 0.71 18.0
P 0.69 17.5
Q 0.65 16.5
R 0.3 7.5
S 0.22 Dia. Dia. 5.5
Q
.110 TAB
R
GwP
EwP
w
GwN
EwN
D
H
Six-IGBT IGBTMOD™
H-Series Module
30 Amperes/ 1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM30TF-24H
is a 1200V (V
Six-IGBT IGBTMOD™ Power
Module.
Type Current Rating V
CM 30 24
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 30 Ampere
CES
Amperes (30) Volts (x 50)
CES
331
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM30TF-24H
Six-IGBT IGBTMOD™ H-Series Module
30 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM30TF-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (T ypical) – 390 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
30 Amperes
60* Amperes
30 Amperes
60* Amperes
310 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5
GES
IC = 3mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 30A, VGE = 15V – 2.5 3.4** Volts
µ
A
IC = 30A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 30A, VGS = 15V – 150 – nC
IC = 30A, VGS = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 2.1 nF
VCC = 600V, IC = 30A, – – 200 ns
V
= V
GE1
= 15V, RG = 10Ω – – 150 ns
GE2
IE = 30A, diE/dt = –60A/µs––250ns
IE = 30A, diE/dt = –60A/µs – 0.22 –
– – 6 nF
– – 1.2 nF
– – 100 ns
– – 350 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.042 °C/W
Per IGBT – – 0.50 °C/W
Per FWDi – – 1.40 °C/W
332
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