POWEREX CM30MD1-12H Datasheet

CM30MD1-12H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

A

K

EV

GE

E

L

GW

PMM P

L

K

GUGV

GEEWGBG

M M

K

K

K

GW E

GGE

K

GB NOT
CONNECTED

C

B

Z

S
V

45°

MAIN TERMINAL

"T" THICK

X

(2 PLACES)

R

W

CONTROL
TERMINAL

P

P1

G

HH

P1PNGE

Q

F

Q

RS T B VUW

N

Y

L

J

K

GU

EU

GV

R "U"

(2 PLACES)

LABEL

CI Module

Three Phase Converter +
Three Phase Inverter
30 Amperes/600 Volts

Description:

Powerex CI Modules are designed
for use in switching applications.
Each module consists of a three
phase diode converter section and
a three phase IGBT inverter
section. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

R
S
T

N

B

GU GV GW
EU

G

UVW

UVW

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.53 115.0
B 2.36 60.0
C 1.18 30.0
D 0.18 4.5
E 4.13 105.0
F 0.20 5.0
G 0.31 8.0
H 0.59 15.0

J 0.68 17.2
K 0.10 2.54
L 0.40 10.16
M 0.49 12.5

EV

G

EW

G

Dimensions Inches Millimeters

N 0.51 13.0
P 0.59 15.0
Q 1.14 29.0
R 2.28 58.0
S 0.16 4.0
T 0.02 0.6
U 0.22 5.5
V 0.08 2.0

W 0.02 0.6

X 0.35 9.0
Y 0.25 6.3
Z 0.47 12.0

Features:

□ Low Drive Power
□ Low V

CE(sat)

□ Discrete Super-Fast

Recovery (70ns)
Free-Wheel Diodes

□ High Frequency Operation

E

(20-25 kHz)

□ Isolated Baseplate for Easy

Heat Sinking

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ General Purpose Inverters
□ Robotics

Ordering Information:

Example: Select the complete nine
digit module part number you
desire from the table below - i.e.
CM30MD1-12H is a 600V (V
30 Ampere CI Power Module.

Type Amperes Volts (x 50)

CM 30 12

Current Rating VCES

CES

),

1

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM30MD1-12H
CI Module
Three Phase Converter + Three Phase Inverter

30 Amperes/600 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Characteristics Symbol CM30MD1-12H Units

Power Device Junction Temperature T
Storage T emperature T

j

stg

-40 to 150 °C

-40 to 125 °C
Mounting Torque, M4 Mounting Screws — 13 in-lb
Module Weight (Typical) — 100 Grams
Isolation Voltage, AC 1 minute, 60Hz V

RMS

2500 Volts

Converter Part

Repetitive Peak Reverse Voltage V
Recommended AC Input Voltage E
DC Output Current I
Surge (Non-repetitive) Forward Current I

RRM

a

O

FSM

I2t for Fusing I2t 1.2 x 10

800 Volts
220 Volts

30 Amperes

550 Amperes

3

IGBT Inverter Part

Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current I
Collector Current (Pulse)* I
Emitter Current** I
Emitter Current** (Pulse)* I
Maximum Collector Dissipation P

CES
GES

C

CM

E

EM

C

600 Volts
±20 Volts

30 Amperes
60 Amperes
30 Amperes
60 Amperes
66 Watts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Converter Sector

Repetitive Reverse Current I
Forward Voltage Drop V
Thermal Resistance (Junction-to-Fin) R

RRM

FM

th(j-f)

VR = V

, Tj = 150°C——8mA

RRM

IF = 30A — — 1.5 Volts

Per Diode — — 1.7 °C/W

IGBT Inverter Sector

Collector Cutoff Current I
Gate-Emitter Threshold V oltage V
Gate-Emitter Cutoff Current I
Collector-Emitter Saturation Voltage V

CES

GE(th)

GES

CE(sat)

VCE = V

, VGE = 0V — — 1 mA

CES

VCE = 10V, IC = 3.0mA 4.5 6.0 7.5 Volts
VGE = V

, VCE = 0V — — 0.5 µA

GES

VGE = 15V, IC = 30A, Tj = 25°C — 2.1 2.8 Volts

VGE = 15V, IC = 30A, Tj = 150°C — 2.15 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Emitter-Collector Voltage V
Reverse Recovery Time t
Reverse Recovery Charge Q
Thermal Resistance (Junction-to-Fin) R

ies
oes
res

G

r

f

EC

rr

rr

th(j-f)

VGE = 0V, VCE = 10V — — 2.4 nF

VCC = 300V, IC = 30A, VGE = 15V — 90 — nC

V

= V

GE1

= 15V, — — 120 nS

GE2

VCC = 300V, IC = 30A, — — 300 nS

Rg = 21Ω, — — 200 nS

Resistive Load — — 300 nS
IE = 30A, VGE = 0V — — 2.8 Volts
IE = 30A, VGE = 0V, — — 110 nS

diE/dt = -60A/µs — 0.08 — µC

Per IGBT — — 1.9 °C/W

— — 3.0 nF

— — 0.6 nF

Per FWDi — — 2.4 °C/W

*Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.

**Characteristics of the anti-parallel emitter-collector free-wheel diode.

2

A2s