Powerex CM300EXS-24S Data Sheet

CM300EXS-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A

D

K

F

M

L

N

V

W

X

TH1

(6)

Th

N
T
C

E(7)

K(8) A(1)

DETAIL "A"

TH2

(5)

Es(4) G(3)

7

8

G

AK (4 PLACES)

DETAIL "B"

Tr

Di

E

H

AL (4 PLACES)

Q

R

C(2)

JJ

3456

2

P

B

1

Y

C

AB

AA

Z

AC
AD

S

T

U

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

The tolerance of size between
terminals is assumed to ±0.4

AE

AH

AF

AJ

AG

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.09 104.0

B 2.44 62.0

C 0.47 11.9

D 3.5 89.0

E 2.44 62.0

F 0.53 13.5

G 0.69 17.66

H 0.75 19.05

J 0.14 3.8

K 0.16 4.2

L 1.97 50.0

M 0.55 14.0

N 0.87 22.0

P 2.26 57.5

Q 1.83 46.5

R 2.9 73.71

S 0.8 20.5

Dimensions Inches Millimeters

U 0.27 7.0

V 0.67 1 7. 0

W 0.64 16.4

X 0.51 13.1

Y 0.17 4.4

Z 0.49 12.5

AA 0.12 3.0

AB 0.17 Dia. 4.3 Dia.

AC 0.102 Dia. 2.6 Dia.

AD 0.088 Dia. 2.25 Dia.

AE 0.15 3.81

AF 0.045 1.15

AG 0.025 0.65

AH 0.05 1.2

AJ 0.29 7.4

AK 0.21 Dia. 5.5 Dia.

AL M5 M5

T 0.67 17.0

Chopper IGBT
NX-Series Module

300 Amperes/1200 Volts

Description:

Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of one IGBT Transistor
and one super-fast recovery diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast

£ RoHS Compliant
£ Isolated Copper Baseplate

Applications:

£ DC/DC Converter
£ DC Motor Control
£ Brake Circuit

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM300EXS-24S is a 1200V
(V

CES

IGBT Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 300 24

CE(sat)

Recovery Clamp Diode

for Easy Heat Sinking

), 300 Ampere Chopper

V

CES

107/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300EXS-24S
Chopper IGBT NX-Series Module

300 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 119°C)*2 IC 300 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Repetitive Peak Reverse Voltage (Clamp Diode Part, VGE = 0V) V

Forward Current (Clamp Diode Part, TC = 25°C)

*2,*4

I

Forward Current (Clamp Diode Part, Pulse, Repetitive)*3 I

Maximum Junction Temperature T

Operating Junction Temperature T

Storage Temperature T

Case Temperature TC -40 to +125 °C

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

0

51.1

42.7

29.5

16.1

0

Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor

35.4

32.5

35.9

Th

Tr

Tr

Di

Di

1200 Volts

CES

±20 Volts

GES

600 Amperes

CRM

2270 Watts

tot

1200 Volts

RRM

*1

300 Amperes

F

*1

600 Amperes

FRM

+175 °C

j(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

2500 Volts

ISO

40.7

LABEL SIDE

2 07/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300EXS-24S
Chopper IGBT NX-Series Module

300 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 300A, VGE = 15V, Tj = 125°C*6 — 2.00 — Volts

IC = 300A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 300A, VGE = 15V, Tj = 125°C*6 — 1.90 — Volts

IC = 300A, VGE = 15V, Tj = 150°C*6 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 700 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 300A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Repetitive Peak Reverse Current I

forward Voltage Drop V

Clamp Di Part (Terminal) IF = 300A, VGE = 0V, Tj = 125°C*6 — 1.80 — Volts

IF = 300A, VGE = 0V, Tj = 150°C*6 — 1.80 — Volts

Forward Voltage Drop V

Clamp Di Part (Chip) IF = 300A, VGE = 0V, Tj = 125°C*6 — 1.70 — Volts

IF = 300A, VGE = 0V, Tj = 150°C*6 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IF = 300A, — 41.0 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg — 6.5 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

±VGE = V

GES

IC = 30mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 300A, VGE = 15V, Tj = 25°C*6 — 1.80 2.25 Volts

CE(sat)

IC = 300A, VGE = 15V, Tj = 25°C*6 — 1.70 2.15 Volts

CE(sat)

— — 30 nF

ies

VCE = 10V, VGE = 0V — — 6.0 nF

oes

— — 0.5 nF

res

— — 800 ns

d(on)

RG = 0Ω, Inductive Load — — 600 ns

d(off)

VR = V

RRM

*1

IF = 300A, VGE = 0V, Tj = 25°C*6 — 1.80 2.25 Volts

F

*1

IF = 300A, VGE = 0V, Tj = 25°C*6 — 1.70 2.15 Volts

F

*1

VCC = 600V, IF = 300A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load, Clamp Di Part — 16.0 — µC

rr

VGE = ±15V, RG = 0Ω, Tj = 150°C, — 32.0 — mJ

off

*1

Inductive Load, Clamp Di Part — 22.0 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — — mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

— — 1 mA

RRM

*2

35.4

32.5

40.7

0

51.1

42.7

29.5

16.1

0

Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor

35.9

Th

Tr

Tr

Di

Di

LABEL SIDE

307/12 Rev. 0