CM300EXS-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A
D
K
F
M
L
N
V
W
X
TH1
(6)
Th
N
T
C
E(7)
K(8) A(1)
DETAIL "A"
TH2
(5)
Es(4) G(3)
7
8
G
AK (4 PLACES)
DETAIL "B"
Tr
Di
E
H
AL (4 PLACES)
Q
R
C(2)
JJ
3456
2
P
B
1
Y
C
AB
AA
Z
AC
AD
S
T
U
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
The tolerance of size between
terminals is assumed to ±0.4
AE
AH
AF
AJ
AG
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.09 104.0
B 2.44 62.0
C 0.47 11.9
D 3.5 89.0
E 2.44 62.0
F 0.53 13.5
G 0.69 17.66
H 0.75 19.05
J 0.14 3.8
K 0.16 4.2
L 1.97 50.0
M 0.55 14.0
N 0.87 22.0
P 2.26 57.5
Q 1.83 46.5
R 2.9 73.71
S 0.8 20.5
Dimensions Inches Millimeters
U 0.27 7.0
V 0.67 1 7. 0
W 0.64 16.4
X 0.51 13.1
Y 0.17 4.4
Z 0.49 12.5
AA 0.12 3.0
AB 0.17 Dia. 4.3 Dia.
AC 0.102 Dia. 2.6 Dia.
AD 0.088 Dia. 2.25 Dia.
AE 0.15 3.81
AF 0.045 1.15
AG 0.025 0.65
AH 0.05 1.2
AJ 0.29 7.4
AK 0.21 Dia. 5.5 Dia.
AL M5 M5
T 0.67 17.0
Chopper IGBT
NX-Series Module
300 Amperes/1200 Volts
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of one IGBT Transistor
and one super-fast recovery diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
£ Discrete Super-Fast
£ RoHS Compliant
£ Isolated Copper Baseplate
Applications:
£ DC/DC Converter
£ DC Motor Control
£ Brake Circuit
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM300EXS-24S is a 1200V
(V
CES
IGBT Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 300 24
CE(sat)
Recovery Clamp Diode
for Easy Heat Sinking
), 300 Ampere Chopper
V
CES
107/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, TC = 119°C)*2 IC 300 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Repetitive Peak Reverse Voltage (Clamp Diode Part, VGE = 0V) V
Forward Current (Clamp Diode Part, TC = 25°C)
*2,*4
I
Forward Current (Clamp Diode Part, Pulse, Repetitive)*3 I
Maximum Junction Temperature T
Operating Junction Temperature T
Storage Temperature T
Case Temperature TC -40 to +125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
j(max)
j(max)
) rating.
rating.
0
51.1
42.7
29.5
16.1
0
Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor
35.4
32.5
35.9
Th
Tr
Tr
Di
Di
1200 Volts
CES
±20 Volts
GES
600 Amperes
CRM
2270 Watts
tot
1200 Volts
RRM
*1
300 Amperes
F
*1
600 Amperes
FRM
+175 °C
j(max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
2500 Volts
ISO
40.7
LABEL SIDE
2 07/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 300A, VGE = 15V, Tj = 125°C*6 — 2.00 — Volts
IC = 300A, VGE = 15V, Tj = 150°C*6 — 2.05 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 300A, VGE = 15V, Tj = 125°C*6 — 1.90 — Volts
IC = 300A, VGE = 15V, Tj = 150°C*6 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 700 — nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 300A, VGE = ±15V, — — 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Repetitive Peak Reverse Current I
forward Voltage Drop V
Clamp Di Part (Terminal) IF = 300A, VGE = 0V, Tj = 125°C*6 — 1.80 — Volts
IF = 300A, VGE = 0V, Tj = 150°C*6 — 1.80 — Volts
Forward Voltage Drop V
Clamp Di Part (Chip) IF = 300A, VGE = 0V, Tj = 125°C*6 — 1.70 — Volts
IF = 300A, VGE = 0V, Tj = 150°C*6 — 1.70 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IF = 300A, — 41.0 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg — 6.5 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
±VGE = V
GES
IC = 30mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 300A, VGE = 15V, Tj = 25°C*6 — 1.80 2.25 Volts
CE(sat)
IC = 300A, VGE = 15V, Tj = 25°C*6 — 1.70 2.15 Volts
CE(sat)
— — 30 nF
ies
VCE = 10V, VGE = 0V — — 6.0 nF
oes
— — 0.5 nF
res
— — 800 ns
d(on)
RG = 0Ω, Inductive Load — — 600 ns
d(off)
VR = V
RRM
*1
IF = 300A, VGE = 0V, Tj = 25°C*6 — 1.80 2.25 Volts
F
*1
IF = 300A, VGE = 0V, Tj = 25°C*6 — 1.70 2.15 Volts
F
*1
VCC = 600V, IF = 300A, VGE = ±15V — — 300 ns
rr
*1
RG = 0Ω, Inductive Load, Clamp Di Part — 16.0 — µC
rr
VGE = ±15V, RG = 0Ω, Tj = 150°C, — 32.0 — mJ
off
*1
Inductive Load, Clamp Di Part — 22.0 — mJ
rr
CC' + EE'
Main Terminals-Chip, — — — mΩ
, VGE = 0V — — 1 mA
CES
, VCE = 0V — — 0.5 µA
GES
— — 1 mA
RRM
*2
35.4
32.5
40.7
0
51.1
42.7
29.5
16.1
0
Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor
35.9
Th
Tr
Tr
Di
Di
LABEL SIDE
307/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
NTC Thermistor Part
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R25 TC = 25°C*2 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R
B Constant B
Approximate by Equation*8 — 3375 — K
(25/50)
= 493Ω -7.3 — +7.8 %
100
Power Dissipation P25 TC = 25°C*2 — — 10 mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*2 R
Thermal Resistance, Junction to Case*2 R
Contact Thermal Resistance, R
Case to Heatsink*2 (Per 1 Module)
Q Per IGBT — — 0.066 K/W
th(j-c)
D Per Clamp Diode — — 0.12 K/W
th(j-c)
Thermal Grease Applied — 25 — K/kW
th(c-f)
*7
Mechanical Characteristics
Mounting Torque Mt Main Terminals, M5 Screw 22 27 31 in-lb
Ms Mounting to Heatsink, M5 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 20 — — mm
Terminal to Baseplate 17 — — mm
Clearance da Terminal to Terminal 12 — — mm
Terminal to Baseplate 10 — — mm
Weight m — 210 — Grams
Flatness of Baseplate ec On Centerline X, Y*5 -100 — +100 µm
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage VCC Applied Across P-N — 600 850 Volts
Gate-Emitter Drive Voltage V
External Gate Resistance RG 0 — 30 Ω
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
R
*8 B
(25/50)
R
R25; Resistance at Absolute Temperature T25 [K]; T25 = 25 [°C] + 273.15 = 298.15 [K]
R50; Resistance at Absolute Temperature T50 [K]; T50 = 50 [°C] + 273.15 = 323.15 [K]
= In(
50 T25 T50
MOUNTING SIDE
25
4 07/12 Rev. 0
)/( 1 –
+ : CONVEX
MOUNTING SIDE
1
)
Y
MOUNTING
X
– : CONCAVE
– : CONCAVE
+ : CONVEX
SIDE
Applied Across G-E 13.5 15.0 16.5 Volts
GE(on)
35.4
32.5
40.7
0
51.1
42.7
29.5
16.1
0
Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor
35.9
Th
Tr
Tr
Di
Di
LABEL SIDE
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
600
500
Tj =
25°
15
C
13.5
VGE = 20V
12
400
, (AMPERES)
C
11
300
200
100
COLLECTOR CURRENT, I
0
10
9
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
8
, (VOLTS)
CE(sat)
6
IC = 600A
IC = 300A
Tj = 25°C
SATURATION VOLTAGE CHARACTERISTICS
3.5
VGE = 15V
3.0
, (VOLTS)
2.5
CE(sat)
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
2.0
1.5
COLLECTOR-EMITTER
1.0
0.5
SATURATION VOLTAGE, V
0
0
COLLECTOR CURRENT, IC, (AMPERES)
FORWARD CHARACTERISTICS
3
10
VGE = 15V
Tj = 25°C
= 125°C
T
j
= 150°C
T
j
, (AMPERES)
E
2
10
COLLECTOR-EMITTER
(CHIP - TYPICAL)
600200 400100 300 500
FREE-WHEEL DIODE
(CHIP - TYPICAL)
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
6 8 10 1412 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
IC = 120A
EMITTER CURRENT, I
1
10
0 1.0 0.5 2.51.5 2.0 3.0
EMITTER-COLLECTOR VOLTAGE, V
, (VOLTS)
EC
507/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
2
10
, (nF)
res
1
, C
10
oes
, C
ies
0
10
CAPACITANCE, C
10
10
10
VGE = 0V
T
= 25°C
j
-1
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
3
2
CAPACITANCE VS. V
(TYPICAL)
0
10
10
1
CE
C
C
C
ies
oes
res
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
t
d(on)
t
f
t
r
10
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL)
3
10
t
d(off)
t
d(on)
2
10
SWITCHING TIME, (ns)
t
f
t
r
VCC = 600V
V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
j
Inductive Load
1
10
2
1
10
COLLECTOR CURRENT, I
10
2
C
, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
3
10
t
d(on)
t
d(off)
t
f
t
r
2
10
SWITCHING TIME, (ns)
VCC = 600V
V
= ±15V
GE
R
= 0Ω
G
T
= 150°C
j
SWITCHING TIME, (ns)
Inductive Load
1
10
1
10
COLLECTOR CURRENT, I
6 07/12 Rev. 0
10
2
, (AMPERES)
C
10
3
10
1
-1
10
EXTERNAL GATE RESISTANCE, R
10
0
VCC = 600V
V
= ±15V
GE
I
= 300A
C
T
= 125°C
j
Inductive Load
1
10
, (Ω)
G
10
2
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
3
10
2
10
SWITCHING TIME, (ns)
1
10
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY CHARACTERISTICS
3
10
(ns)
rr
(A), t
rr
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
t
r
VCC = 600V
V
GE
I
= 300A
C
T
= 150°C
j
Inductive Load
10
0
10
1
(TYPICAL)
t
d(on)
t
d(off)
t
f
= ±15V
10
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3
10
(ns)
rr
(A), t
rr
2
10
VCC = 600V
V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
j
Inductive Load
REVERSE RECOVERY, I
1
10
2
10
1
EMITTER CURRENT, IE, (AMPERES)
10
2
GATE CHARGE VS. V
GE
I
rr
t
rr
3
10
20
IC = 300A
V
= 600V
CC
T
= 25°C
15
, (VOLTS)
GE
j
2
10
REVERSE RECOVERY, I
1
10
1
10
EMITTER CURRENT, IE, (AMPERES)
10
VCC = 600V
V
R
T
j
Inductive Load
2
= ±15V
GE
= 0Ω
G
= 150°C
I
rr
t
rr
10
10
5
GATE-EMITTER VOLTAGE, V
3
0
0
200 400 600 1000800
GATE CHARGE, QG, (nC)
707/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
, (mJ)
rr
, (mJ)
off
, E
on
1
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
10
= 600V
V
CC
V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
j
1
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
10
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
VCC = 600V
V
= ±15V
GE
R
, (mJ)
rr
, (mJ)
off
, E
on
1
10
E
on
E
off
E
rr
2
10
3
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
= 0Ω
G
T
= 150°C
j
1
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
10
2
E
on
E
off
E
rr
3
10
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
, (mJ)
rr
, (mJ)
off
, E
on
1
10
V
= 600V
CC
V
= ±15V
0
10
GE
I
C/IE
T
= 125°C
j
-1
= 300A
0
10
GATE RESISTANCE, RG, (Ω)
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
10
10
, (mJ)
rr
, (mJ)
off
, E
on
1
10
VCC = 600V
E
on
E
off
E
rr
1
10
2
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
10
0
10
V
GE
I
C/IE
T
= 150°C
j
-1
= ±15V
= 300A
0
10
GATE RESISTANCE, RG, (Ω)
10
E
on
E
off
E
rr
1
10
2
8 07/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300EXS-24S
Chopper IGBT NX-Series Module
300 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
th(j-c')
10
-3
10
0
10
-2
10
-1
10
0
10
1
-1
10
Single Pulse
T
= 25°C
C
Per Unit Base =
R
=
• (NORMALIZED VALUE)
10
th
= R
th
Z
0.066°K/W
-2
(IGBT)
R
th(j-c)
th(j-c)
=
0.12°K/W
(FWDi)
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
-5
10
TIME, (s)
10
-4
10
-3
10
10
10
-1
-2
-3
907/12 Rev. 0
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