Powerex CM300E3Y6-24NFH Data Sheet
CM300E3Y6-24NFH
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
A
M
K
N
P
H
B
(4 PLACES)
Q
LABEL
Di2
D
W W
Q
Di1
E2
NTC
F F
E
C2E1 E2 C1
Q
R
C
S T T U
W
X X X
Tr 2
C2E1
C1
G2
G
E2
H
E1
G1
G
J
V NUTS (3 PLACES)
Y
Z
AA
G2
E2
E1 (TH2)
G1 (TH1)
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.18+0.4/-0.02 30.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.89±0.01 48.0±0.25
F 0.29 7.5
G 0.24 6.0
J 0.689 17.5
H 0.59 15.0
K 0.244 6.2
L 0.16 4.0
M 0.56 14.2
N 1.18 30.0
Dimensions Inches Millimeters
P 0.79 20.0
Q 0.28 7.0
R 0.26 Dia. Dia. 6.5
S 0.85 21.5
T 0.98 25.0
U 0.94 24.0
V M6 Metric M6
V 0.16 4.0
W 0.71 18.0
X 0.55 14.0
Y 0.02 0.5
Z 0.33 8.5
AA 0.87 22.2
Chopper IGBTMOD™
NFH-Series Module
300 Amperes/1200 Volts
L
Description:
Powerex IGBTMOD™ Modules
are designed for use high
frequency applications; 30 kHz for
hard switching applications and
60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low E
£ Discrete Super-Fast Recovery
£ Isolated Baseplate for Easy
Applications:
£ Power Supplies
£ Induction Heating
£ Welders
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM300E3Y6-24NFH is a 1200V
(V
CES
IGBTMOD™ Power Module.
SW(off)
Free-Wheel Diode
Heat Sinking
), 300 Ampere Chopper
Type Current Rating
V
CES
Amperes Volts (x 50)
CM 300 24
112/11 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM300E3Y6-24NFH
Chopper IGBTMOD™ NFH-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Inverter IGBT/FWDi Part
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) V
Gate-Emitter Voltage (VCE = 0V) V
1200 Volts
CES
±20 Volts
GES
Collector Current (Operation, TC = 25°C)*3 IC 300 Amperes
Collector Current (Pulse, Repetitive)*2 I
Total Power Dissipation (TC = 25°C)
*2,*3
P
Emitter Current (Operation, TC = 25°C)*3 I
Emitter Current (Pulse, Repetitive)*2 I
600 Amperes
CRM
1760 Watts
tot
*1
50 Amperes
E
*1
100 Amperes
ERM
Clamp Diode Part
Characteristics Symbol Rating Units
Repetitive Peak Reverse Voltage V
Forward Current (Operation, TC = 25°C)*3 IF 300 Amperes
Forward Current (Pulse, Repetitive)*2 I
1200 Volts
RRM
600 Amperes
FRM
Module
Characteristics Symbol Rating Units
Isolation Voltage (Charged Part to Baseplate, f= 60 Hz, AC 1 Minute) V
Maximum Junction Temperature T
Operating Junction Temperature T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*3 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location. The heatsink ther mal resistance should be measured just under the chips.
0 60.1
0
18.4
32.2
34.4
0 76.742.231.8
Each mark points to the center position of each chip.
Tr2: IGBT Di2: FWDi
Di1: ClampDi Th: NTC Thermistor
Th
Di1
Tr2Tr2
Di2
52.4
Di1
LABEL SIDE
0
24.4
34.5
j(max)
rating.
2500 V
ISO
+150 °C
j(max)
-40 to +150 °C
j(op)
-40 to +125 °C
stg
rms
2 12/11 Rev. 0
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