Powerex CM300DY-24S Data Sheet

CM300DY-24S
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
A
M
K
N
P
H
B
(4 PLACES)
C2E1
Q
LABEL
Di1
D
W W
Q
C1
Tr 2
G2 E2 (Es2)
E1 (Es1) G1
F F
E
C2E1 E2 C1
Q
R
C
S T T U
W
X X X
Tr 2
E2
Di2
G2
G
E2
H
E1
G1
G
J
V NUTS (3 PLACES)
Y (TAB #110)
Z
AA
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2
The tolerance of size between terminals is assumed to ±0.4
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.18+0.04/-0.02 30.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.89±0.01 48.0±0.25
F 0.29 7.5
G 0.24 6.0
H 0.59 15.0
J 0.689 17.5
K 0.244 6.2
L 0.16 4.0
M 0.56 14.2
Dimensions Inches Millimeters
P 0.79 20.0
Q 0.28 7.0
R 0.26 Dia. 6.5 Dia.
S 0.85 21.5
T 0.98 25.0
U 0.94 24.0
V M6 Metric M6
W 0.71 18.0
X 0.55 14.0
Y 0.02 0.5
Z 0.33 8.5
AA 0.87 22.2
N 1.18 30.0
Dual IGBT S-Series Module
300 Amperes/1200 Volts
L
Description:
Powerex Dual IGBT Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse­connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
£ Low Drive Power £ Low V £
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control £ Motion/Servo Control £ UPS £ Welding Power Supplies £ Laser Power Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM300DY-24S is a 1200V (V IGBT Power Module.
Current Rating V Type Amperes Volts (x 50)
CM 300 24
CE(sat)
Discrete Super-Fast Recovery Free-Wheel Diode
Heat Sinking
), 300 Ampere Dual
CES
CES
102/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24S Dual IGBT S-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (G-E Short-Circuited) V
Gate-Emitter Voltage (C-E Short-Circuited) V
Collector Current (DC, TC = 119°C)
*2,*4
IC 300 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Emitter Current*2 I
Emitter Current (Pulse, Repetitive)*3 I
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature T
Maximum Case Temperature*4 T
Operating Junction Temperature (Under Switching) T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *2 Junction temperature (Tj) should not increase beyond maximum junction temperature (T *3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T *4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips.
j(max)
) rating.
j(max)
rating.
0
37.6
26.8
32.1
31.9
Tr2
Tr2
Di2
Di2
1200 Volts
CES
±20 Volts
GES
600 Amperes
CRM
2270 Watts
tot
*1
300 Amperes
E
*1
600 Amperes
ERM
2500 Volts
ISO
175 °C
j(max)
125 °C
C(max)
-40 to +150 °C
j(opr)
-40 to +125 °C
stg
45.4
45.3
65.9
76.7
Tr1
Di1
Tr1
Di1
42.1
28.7
42.2
28.9
0
Tr1/Tr2: IGBT Di1/Di2: FWDi
0
LABEL SIDE
2
02/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24S Dual IGBT S-Series Module
300 Amperes/1200 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current I
Gate-Emitter Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
(Terminal) IC = 300A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts
IC = 300A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts
Collector-Emitter Saturation Voltage V
(Chip) IC = 300A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts
IC = 300A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V 700 nC
Turn-on Delay Time t
Rise Time tr VCC = 600V, IC = 300A, VGE = ±15V, 200 ns
Turn-off Delay Time t
Fall Time tf — — 300 ns
Emitter-Collector Voltage V
(Terminal) IE = 300A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts
IE = 300A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts
Emitter-Collector Voltage V
(Chip) IE = 300A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts
IE = 300A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts
Reverse Recovery Time t
Reverse Recovery Charge Q
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 300A, 41 mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 6.5 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi). *5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
VCE = V
CES
VGE = V
GES
IC = 30mA, VCE = 10V 5.4 6 6.6 Volts
GE(th)
IC = 300A, VGE = 15V, Tj = 25°C*5 — 1.85 2.25 Volts
CE(sat)
IC = 300A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts
CE(sat)
— — 30 nF
ies
VCE = 10V, G-E Short-Circuited — — 6.0 nF
oes
— — 0.5 nF
res
— — 800 ns
d(on)
RG = 0Ω, Inductive Load 600 ns
d(off)
*1
IE = 300A, VGE = 0V, Tj = 25°C*5 1.85 2.30 Volts
EC
*1
IE = 300A, VGE = 0V, Tj = 25°C*5 1.70 2.15 Volts
EC
*1
VCC = 600V, IE = 300A, VGE = ±15V — — 300 ns
rr
*1
RG = 0Ω, Inductive Load 16 µC
rr
VGE = ±15V, RG = 0Ω, 32 mJ
off
*1
Tj = 150°C, Inductive Load 22 mJ
rr
CC' + EE'
Main Terminals-Chip, 0.9 mΩ
, G-E Short-Circuited 1 mA
CES
, C-E Short-Circuited 0.5 µA
GES
*2
02/14 Rev. 3
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24S Dual IGBT S-Series Module
300 Amperes/1200 Volts
Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case*4 R
Thermal Resistance, Junction to Case*4 R
Contact Thermal Resistance, R
Case to Heatsink*4 (Per 1/2 Module)
Mechanical Characteristics
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb
Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb
Weight m — 400 — Grams
Flatness of Baseplate ec On Centerline X, Y*7 -100 — +100 µm
Recommended Operating Conditions, Ta = 25°C
Characteristics Symbol Test Conditions Min. Typ. Max. Units
(DC) Supply Voltage VCC Applied Across C1-E2 600 850 Volts
Gate (-Emitter Drive) Voltage V
External Gate Resistance RG Per Switch 0 14
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. Refer to the figure to the right for chip location. The heatsink thermal resistance should be measured just under the chips. *6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m K)]. *7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
Y
BOTTOM
X
3 mm
– CONCAVE
+ CONVEX
HEATSINK SIDE
HEATSINK SIDE
+ CONVEX
– CONCAVE
Q Per IGBT 66 K/kW
th(j-c)
D Per IFWDi 120 K/kW
th(j-c)
Thermal Grease Applied 20 — K/kW
th(c-s)
*6
Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts
GE(on)
45.4
0
37.6
26.8
0
32.1
31.9
45.3
65.9
76.7
Tr1
Tr2
Di2
Tr1/Tr2: IGBT Di1/Di2: FWDi
Di1
Tr2
Di2
Tr1
Di1
42.1
28.7
0
LABEL SIDE
42.2
28.9
4
02/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24S Dual IGBT S-Series Module
300 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
600
VGE = 20V
500
15
13.5
12
400
, (AMPERES)
C
11
300
200
100
COLLECTOR CURRENT, I
0
10
9
0 2 4 6 8 10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
8
, (VOLTS)
Tj = 25°C
(Chip)
Tj = 25°C
SATURATION VOLTAGE CHARACTERISTICS
3.5
VGE = 15V
3.0
Tj = 25°C T
, (VOLTS)
CE(sat)
2.5
T
2.0
1.5
COLLECTOR-EMITTER
1.0
0.5
SATURATION VOLTAGE, V
0
100 200 300 400 500 600
0
COLLECTOR CURRENT, IC, (AMPERES)
FORWARD CHARACTERISTICS
3
10
Tj = 25°C T T
COLLECTOR-EMITTER
(CHIP - TYPICAL)
= 125°C
j
= 150°C
j
FREE-WHEEL DIODE
(CHIP - TYPICAL)
= 125°C
j
= 150°C
j
(Chip)
CE(sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE, V
0
6 8 10 1412 16 18 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
02/14 Rev. 3
IC = 600A
IC = 300A
IC = 120A
(Chip)
, (AMPERES)
E
2
10
EMITTER CURRENT, I
1
10
0 1.0 0.5 2.51.5 2.0 3.0
EMITTER-COLLECTOR VOLTAGE, V
(Chip)
, (VOLTS)
EC
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24S Dual IGBT S-Series Module
300 Amperes/1200 Volts
CAPACITANCE VS. V
2
10
, (nF)
1
10
res
, C
oes
, C
ies
0
10
-1
10
CAPACITANCE, C
VGE = 0V
-2
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
SWITCHING CHARACTERISTICS
3
10
t
d(on)
2
10
SWITCHING TIME, (ns)
1
10
1
10
COLLECTOR CURRENT, I
(TYPICAL)
0
10
HALF-BRIDGE
(TYPICAL)
t
d(off)
t
f
10
10
VCC = 600V V
GE
R
G
T
j
Inductive Load
2
, (AMPERES)
C
CE
C
ies
C
oes
C
res
1
t
r
= ±15V
= 0Ω
= 150°C
10
10
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL)
3
10
t
d(off)
t
f
t
d(on)
2
10
SWITCHING TIME, (ns)
1
10
2
1
10
COLLECTOR CURRENT, IC, (AMPERES)
10
2
t
r
VCC = 600V V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
j
Inductive Load
10
3
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
3
10
(ns)
r
, t
d(on)
2
10
SWITCHING TIME, t
t
d(on)
t
d(off)
t
r
t
f
VCC = 600V V
= ±15V
GE
I
= 300A
C
T
= 125°C
j
4
10
(ns)
f
, t
d(off)
3
10
SWITCHING TIME, t
Inductive Load
1
10
3
-1
10
EXTERNAL GATE RESISTANCE, R
10
0
10
1
, (Ω)
G
10
10
2
2
6
02/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24S Dual IGBT S-Series Module
300 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
3
10
t
d(on)
(ns)
r
, t
d(on)
10
t
2
r
VCC = 600V V I T
t
d(off)
t
f
Inductive Load
1
10
-1
10
EXTERNAL GATE RESISTANCE, RG, (Ω)
10
0
10
1
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3
10
(ns) SWITCHING TIME, t
rr
(A), t
rr
= ±15V
GE
= 300A
C
= 150°C
j
10
4
10
(ns)
f
, t
d(off)
3
10
SWITCHING TIME, t
2
10
2
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
3
10
(ns)
rr
(A), t
rr
2
10
VCC = 600V V
GE
R
G
T
= 125°C
j
Inductive Load
REVERSE RECOVERY, I
1
10
10
1
EMITTER CURRENT, IE, (AMPERES)
10
2
GATE CHARGE VS. V
20
VCC = 600V I
= 300A
C
T
= 25°C
15
, (VOLTS)
GE
j
= ±15V
= 0Ω
I
rr
t
rr
GE
10
3
2
10
REVERSE RECOVERY, I
1
10
1
10
EMITTER CURRENT, IE, (AMPERES)
02/14 Rev. 3
10
VCC = 600V V
GE
R
G
T
j
Inductive Load
2
= ±15V
= 0Ω
= 150°C
I
rr
t
rr
10
10
5
GATE-EMITTER VOLTAGE, V
3
0
0
200 400 600 800 1000
GATE CHARGE, QG, (nC)
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24S Dual IGBT S-Series Module
300 Amperes/1200 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
Inductive Load, Per Pulse
, (mJ/PULSE)
rr
, (mJ/PULSE)
off
, E
on
1
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
10
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
Inductive Load, Per Pulse
, (mJ/PULSE)
rr
, (mJ/PULSE)
off
, E
on
1
V
= 600V
CC
V
= ±15V
GE
R
= 0Ω
G
T
= 125°C
j
E
on
E
off
E
rr
2
10
3
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
10
2
VCC = 600V V
= ±15V
GE
R
= 0Ω
G
T
= 150°C
j
E
on
E
off
E
rr
10
3
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
2
10
, (mJ)
rr
, (mJ)
off
, E
on
V
= 600V
CC
1
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
V
= ±15V
GE
I
= 300A
C/IE
T
= 125°C
j
E
on
E
off
E
rr
Inductive Load, Per Pulse Inductive Load, Per Pulse
0
10
10
-2
-1
10
GATE RESISTANCE, RG, (Ω)
10
, (mJ)
rr
, (mJ)
off
, E
on
V
= 600V
CC
1
10
SWITCHING ENERGY, E
REVERSE RECIVERY ENERGY, E
0
10
1
10
2
10
0
10
-2
V
GE
I
C/IE
T
j
= ±15V
= 300A
= 150°C
E
on
E
off
E
rr
-1
10
GATE RESISTANCE, RG, (Ω)
10
0
10
1
10
2
8
02/14 Rev. 3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM300DY-24S Dual IGBT S-Series Module
300 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
th(j-c')
10
10
0
-1
(MAXIMUM)
Single Pulse T
= 25°C
C
Per Unit Base = R
=
-2
10
• (NORMALIZED VALUE)
th
= R
th
Z
th(j-c)
66 K/kW (IGBT) R
=
th(j-c)
120 K/kW (FWDi)
-3
10
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
10-510-410-310-210-110010
1
TIME, (s)
02/14 Rev. 3
9
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