0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to ±0.4
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.18+0.04/-0.02 30.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.89±0.01 48.0±0.25
F 0.29 7.5
G 0.24 6.0
H 0.59 15.0
J 0.689 17.5
K 0.244 6.2
L 0.16 4.0
M 0.56 14.2
Dimensions Inches Millimeters
P 0.79 20.0
Q 0.28 7.0
R 0.26 Dia. 6.5 Dia.
S 0.85 21.5
T 0.98 25.0
U 0.94 24.0
V M6 Metric M6
W 0.71 18.0
X 0.55 14.0
Y 0.02 0.5
Z 0.33 8.5
AA 0.87 22.2
N 1.18 30.0
Dual IGBT
S-Series Module
300 Amperes/1200 Volts
L
Description:
Powerex Dual IGBT Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low V
£
£ Isolated Baseplate for Easy
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM300DY-24S is a
1200V (V
IGBT Power Module.
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (G-E Short-Circuited) V
Gate-Emitter Voltage (C-E Short-Circuited) V
Collector Current (DC, TC = 119°C)
*2,*4
IC 300 Amperes
Collector Current (Pulse, Repetitive)*3 I
Total Power Dissipation (TC = 25°C)
*2,*4
P
Emitter Current*2 I
Emitter Current (Pulse, Repetitive)*3 I
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V
Maximum Junction Temperature T
Maximum Case Temperature*4 T
Operating Junction Temperature (Under Switching) T
Storage Temperature T
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 300A, — 41 — mJ
Turn-off Switching Energy per Pulse E
Reverse Recovery Energy per Pulse E
Internal Lead Resistance R
Per Switch,TC = 25°C
Internal Gate Resistance rg Per Switch — 6.5 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Flatness of Baseplate ec On Centerline X, Y*7 -100 — +100 µm
Recommended Operating Conditions, Ta = 25°C
Characteristics Symbol Test Conditions Min. Typ. Max. Units
(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts
Gate (-Emitter Drive) Voltage V
External Gate Resistance RG Per Switch 0 — 14 Ω
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
Y
BOTTOM
X
3 mm
– CONCAVE
+ CONVEX
HEATSINK SIDE
HEATSINK SIDE
+ CONVEX
– CONCAVE
Q Per IGBT — — 66 K/kW
th(j-c)
D Per IFWDi — — 120 K/kW
th(j-c)
Thermal Grease Applied — 20 — K/kW
th(c-s)
*6
Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts