Powerex CM300DY-24S Data Sheet

CM300DY-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A

M

K

N

P

H

B

(4 PLACES)

C2E1

Q

LABEL

Di1

D

W W

Q

C1

Tr 2

G2
E2 (Es2)

E1 (Es1)
G1

F F

E

C2E1 E2 C1

Q

R

C

S T T U

W

X X X

Tr 2

E2

Di2

G2

G

E2

H

E1

G1

G

J

V NUTS (3 PLACES)

Y (TAB #110)

Z

AA

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2

The tolerance of size between
terminals is assumed to ±0.4

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0

B 2.44 62.0

C 1.18+0.04/-0.02 30.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 1.89±0.01 48.0±0.25

F 0.29 7.5

G 0.24 6.0

H 0.59 15.0

J 0.689 17.5

K 0.244 6.2

L 0.16 4.0

M 0.56 14.2

Dimensions Inches Millimeters

P 0.79 20.0

Q 0.28 7.0

R 0.26 Dia. 6.5 Dia.

S 0.85 21.5

T 0.98 25.0

U 0.94 24.0

V M6 Metric M6

W 0.71 18.0

X 0.55 14.0

Y 0.02 0.5

Z 0.33 8.5

AA 0.87 22.2

N 1.18 30.0

Dual IGBT
S-Series Module

300 Amperes/1200 Volts

L

Description:

Powerex Dual IGBT Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM300DY-24S is a
1200V (V
IGBT Power Module.

Current Rating V
Type Amperes Volts (x 50)

CM 300 24

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

Heat Sinking

), 300 Ampere Dual

CES

CES

102/14 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DY-24S
Dual IGBT S-Series Module

300 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (G-E Short-Circuited) V

Gate-Emitter Voltage (C-E Short-Circuited) V

Collector Current (DC, TC = 119°C)

*2,*4

IC 300 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Emitter Current*2 I

Emitter Current (Pulse, Repetitive)*3 I

Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) V

Maximum Junction Temperature T

Maximum Case Temperature*4 T

Operating Junction Temperature (Under Switching) T

Storage Temperature T

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.

j(max)

) rating.

j(max)

rating.

0

37.6

26.8

32.1

31.9

Tr2

Tr2

Di2

Di2

1200 Volts

CES

±20 Volts

GES

600 Amperes

CRM

2270 Watts

tot

*1

300 Amperes

E

*1

600 Amperes

ERM

2500 Volts

ISO

175 °C

j(max)

125 °C

C(max)

-40 to +150 °C

j(opr)

-40 to +125 °C

stg

45.4

45.3

65.9

76.7

Tr1

Di1

Tr1

Di1

42.1

28.7

42.2

28.9

0

Tr1/Tr2: IGBT Di1/Di2: FWDi

0

LABEL SIDE

2

02/14 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DY-24S
Dual IGBT S-Series Module

300 Amperes/1200 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 300A, VGE = 15V, Tj = 125°C*5 — 2.00 — Volts

IC = 300A, VGE = 15V, Tj = 150°C*5 — 2.05 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 300A, VGE = 15V, Tj = 125°C*5 — 1.90 — Volts

IC = 300A, VGE = 15V, Tj = 150°C*5 — 1.95 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 700 — nC

Turn-on Delay Time t

Rise Time tr VCC = 600V, IC = 300A, VGE = ±15V, — — 200 ns

Turn-off Delay Time t

Fall Time tf — — 300 ns

Emitter-Collector Voltage V

(Terminal) IE = 300A, VGE = 0V, Tj = 125°C*5 — 1.85 — Volts

IE = 300A, VGE = 0V, Tj = 150°C*5 — 1.85 — Volts

Emitter-Collector Voltage V

(Chip) IE = 300A, VGE = 0V, Tj = 125°C*5 — 1.70 — Volts

IE = 300A, VGE = 0V, Tj = 150°C*5 — 1.70 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 300A, — 41 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 6.5 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

VGE = V

GES

IC = 30mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 300A, VGE = 15V, Tj = 25°C*5 — 1.85 2.25 Volts

CE(sat)

IC = 300A, VGE = 15V, Tj = 25°C*5 — 1.70 2.15 Volts

CE(sat)

— — 30 nF

ies

VCE = 10V, G-E Short-Circuited — — 6.0 nF

oes

— — 0.5 nF

res

— — 800 ns

d(on)

RG = 0Ω, Inductive Load — — 600 ns

d(off)

*1

IE = 300A, VGE = 0V, Tj = 25°C*5 — 1.85 2.30 Volts

EC

*1

IE = 300A, VGE = 0V, Tj = 25°C*5 — 1.70 2.15 Volts

EC

*1

VCC = 600V, IE = 300A, VGE = ±15V — — 300 ns

rr

*1

RG = 0Ω, Inductive Load — 16 — µC

rr

VGE = ±15V, RG = 0Ω, — 32 — mJ

off

*1

Tj = 150°C, Inductive Load — 22 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 0.9 mΩ

, G-E Short-Circuited — — 1 mA

CES

, C-E Short-Circuited — — 0.5 µA

GES

*2

02/14 Rev. 3

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DY-24S
Dual IGBT S-Series Module

300 Amperes/1200 Volts

Thermal Resistance Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*4 R

Thermal Resistance, Junction to Case*4 R

Contact Thermal Resistance, R

Case to Heatsink*4 (Per 1/2 Module)

Mechanical Characteristics

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Mounting Torque Mt Main Terminals, M6 Screw 31 35 40 in-lb

Ms Mounting to Heatsink, M6 Screw 31 35 40 in-lb

Weight m — 400 — Grams

Flatness of Baseplate ec On Centerline X, Y*7 -100 — +100 µm

Recommended Operating Conditions, Ta = 25°C

Characteristics Symbol Test Conditions Min. Typ. Max. Units

(DC) Supply Voltage VCC Applied Across C1-E2 — 600 850 Volts

Gate (-Emitter Drive) Voltage V

External Gate Resistance RG Per Switch 0 — 14 Ω

*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*7 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.

Y

BOTTOM

X

3 mm

– CONCAVE

+ CONVEX

HEATSINK SIDE

HEATSINK SIDE

+ CONVEX

– CONCAVE

Q Per IGBT — — 66 K/kW

th(j-c)

D Per IFWDi — — 120 K/kW

th(j-c)

Thermal Grease Applied — 20 — K/kW

th(c-s)

*6

Applied Across G1-Es1 / G2-Es2 13.5 15.0 16.5 Volts

GE(on)

45.4

0

37.6

26.8

0

32.1

31.9

45.3

65.9

76.7

Tr1

Tr2

Di2

Tr1/Tr2: IGBT Di1/Di2: FWDi

Di1

Tr2

Di2

Tr1

Di1

42.1

28.7

0

LABEL SIDE

42.2

28.9

4

02/14 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DY-24S
Dual IGBT S-Series Module

300 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(CHIP - TYPICAL)

600

VGE = 20V

500

15

13.5

12

400

, (AMPERES)

C

11

300

200

100

COLLECTOR CURRENT, I

0

10

9

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(CHIP - TYPICAL)

10

8

, (VOLTS)

Tj = 25°C

(Chip)

Tj = 25°C

SATURATION VOLTAGE CHARACTERISTICS

3.5

VGE = 15V

3.0

Tj = 25°C
T

, (VOLTS)

CE(sat)

2.5

T

2.0

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

100 200 300 400 500 600

0

COLLECTOR CURRENT, IC, (AMPERES)

FORWARD CHARACTERISTICS

3

10

Tj = 25°C
T
T

COLLECTOR-EMITTER

(CHIP - TYPICAL)

= 125°C

j

= 150°C

j

FREE-WHEEL DIODE

(CHIP - TYPICAL)

= 125°C

j

= 150°C

j

(Chip)

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

02/14 Rev. 3

IC = 600A

IC = 300A

IC = 120A

(Chip)

, (AMPERES)

E

2

10

EMITTER CURRENT, I

1

10

0 1.0 0.5 2.51.5 2.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

(Chip)

, (VOLTS)

EC

5

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DY-24S
Dual IGBT S-Series Module

300 Amperes/1200 Volts

CAPACITANCE VS. V

2

10

, (nF)

1

10

res

, C

oes

, C

ies

0

10

-1

10

CAPACITANCE, C

VGE = 0V

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING CHARACTERISTICS

3

10

t

d(on)

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, I

(TYPICAL)

0

10

HALF-BRIDGE

(TYPICAL)

t

d(off)

t

f

10

10

VCC = 600V
V

GE

R

G

T

j

Inductive Load

2

, (AMPERES)

C

CE

C

ies

C

oes

C

res

1

t

r

= ±15V

= 0Ω

= 150°C

10

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL)

3

10

t

d(off)

t

f

t

d(on)

2

10

SWITCHING TIME, (ns)

1

10

2

1

10

COLLECTOR CURRENT, IC, (AMPERES)

10

2

t

r

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 125°C

j

Inductive Load

10

3

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

3

10

(ns)

r

, t

d(on)

2

10

SWITCHING TIME, t

t

d(on)

t

d(off)

t

r

t

f

VCC = 600V
V

= ±15V

GE

I

= 300A

C

T

= 125°C

j

4

10

(ns)

f

, t

d(off)

3

10

SWITCHING TIME, t

Inductive Load

1

10

3

-1

10

EXTERNAL GATE RESISTANCE, R

10

0

10

1

, (Ω)

G

10

10

2

2

6

02/14 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DY-24S
Dual IGBT S-Series Module

300 Amperes/1200 Volts

SWITCHING TIME VS.

GATE RESISTANCE

(TYPICAL)

3

10

t

d(on)

(ns)

r

, t

d(on)

10

t

2

r

VCC = 600V
V
I
T

t

d(off)

t

f

Inductive Load

1

10

-1

10

EXTERNAL GATE RESISTANCE, RG, (Ω)

10

0

10

1

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

3

10

(ns) SWITCHING TIME, t

rr

(A), t

rr

= ±15V

GE

= 300A

C

= 150°C

j

10

4

10

(ns)

f

, t

d(off)

3

10

SWITCHING TIME, t

2

10

2

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

3

10

(ns)

rr

(A), t

rr

2

10

VCC = 600V
V

GE

R

G

T

= 125°C

j

Inductive Load

REVERSE RECOVERY, I

1

10

10

1

EMITTER CURRENT, IE, (AMPERES)

10

2

GATE CHARGE VS. V

20

VCC = 600V
I

= 300A

C

T

= 25°C

15

, (VOLTS)

GE

j

= ±15V

= 0Ω

I

rr

t

rr

GE

10

3

2

10

REVERSE RECOVERY, I

1

10

1

10

EMITTER CURRENT, IE, (AMPERES)

02/14 Rev. 3

10

VCC = 600V
V

GE

R

G

T

j

Inductive Load

2

= ±15V

= 0Ω

= 150°C

I

rr

t

rr

10

10

5

GATE-EMITTER VOLTAGE, V

3

0

0

200 400 600 800 1000

GATE CHARGE, QG, (nC)

7

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DY-24S
Dual IGBT S-Series Module

300 Amperes/1200 Volts

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

Inductive Load, Per Pulse

, (mJ/PULSE)

rr

, (mJ/PULSE)

off

, E

on

1

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

10

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

Inductive Load, Per Pulse

, (mJ/PULSE)

rr

, (mJ/PULSE)

off

, E

on

1

V

= 600V

CC

V

= ±15V

GE

R

= 0Ω

G

T

= 125°C

j

E

on

E

off

E

rr

2

10

3

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

EMITTER CURRENT, IE, (AMPERES)

10

2

VCC = 600V
V

= ±15V

GE

R

= 0Ω

G

T

= 150°C

j

E

on

E

off

E

rr

10

3

HALF-BRIDGE SWITCHING

CHARACTERISTICS (TYPICAL)

2

10

, (mJ)

rr

, (mJ)

off

, E

on

V

= 600V

CC

1

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

V

= ±15V

GE

I

= 300A

C/IE

T

= 125°C

j

E

on

E

off

E

rr

Inductive Load, Per Pulse Inductive Load, Per Pulse

0

10

10

-2

-1

10

GATE RESISTANCE, RG, (Ω)

10

, (mJ)

rr

, (mJ)

off

, E

on

V

= 600V

CC

1

10

SWITCHING ENERGY, E

REVERSE RECIVERY ENERGY, E

0

10

1

10

2

10

0

10

-2

V

GE

I

C/IE

T

j

= ±15V

= 300A

= 150°C

E

on

E

off

E

rr

-1

10

GATE RESISTANCE, RG, (Ω)

10

0

10

1

10

2

8

02/14 Rev. 3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM300DY-24S
Dual IGBT S-Series Module

300 Amperes/1200 Volts

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

th(j-c')

10

10

0

-1

(MAXIMUM)

Single Pulse
T

= 25°C

C

Per Unit Base =
R

=

-2

10

• (NORMALIZED VALUE)

th

= R

th

Z

th(j-c)

66 K/kW
(IGBT)
R

=

th(j-c)

120 K/kW
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10-510-410-310-210-110010

1

TIME, (s)

02/14 Rev. 3

9