Powerex CM300DY-24NFH Data Sheet

CM300DY-24NFH

A

XW

FF

B

N

L

(4 PLACES)

D

M NUTS
(3 PLACES)

G

G

H

KKK

P P

P

T THICK
U WIDTH

QQ

V

C

S

R

G2

E2

E1

G1

C1E2C2E1

T

C

MEASURED POINT

(BASEPLATE)

LABEL

C2E1 E2 C1

G2

E2

E1

G1

E

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 [phone]

Dual IGBTMOD™
NFH-Series Module

300 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules are
designed for use in high
frequency applications; 30 kHz
for hard switching applications
and 60 to 70 kHz for soft switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem­bly and thermal management.

Features:

£ Low E

SW(off)

£ Discrete Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.25 108.0

B 2.44 62.0

C 1.18+0.04/-0.02 30.0+1.0/-0.5

D 3.66±0.01 93.0±0.25

E 1.89±0.01 48.0±0.25

F 0.98 25.0

G 0.24 6.0

H 0.59 15.0

K 0.55 14.0

L 0.26 Dia. Dia. 6.5

M M6 Metric M6

Dimensions Inches Millimeters

N 1.18 30.0

P 0.71 18.0

Q 0.28 7.0

R 0.87 22.2

S 0.33 8.5

T 0.02 0.5

U 0.110 2.8

V 0.16 4.0

W 0.85 21.5

X 0.94 24.0

Heat Sinking

Applications:

£ Power Supplies
£ Induction Heating
£ Welders

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM300DY-24NFH is a 1200V
(V
IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 300 24

), 300 Ampere Dual

CES

V

CES

1Rev. 01/06

1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 [phone]

CM300DY-24NFH
Dual IGBTMOD™ NFH-Series Module

300 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM300DY-24NF Units

Junction Temperature Tj –40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (G-E Short) V

Gate-Emitter Voltage (C-E Short) V

Collector Current (TC = 25°C) IC 300* Amperes

Peak Collector Current ICM 600* Amperes

Emitter Current** (TC = 25°C) IE 300* Amperes

Peak Emitter Current** IEM 600* Amperes

Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1130 Watts

Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 1900 Watts

Mounting Torque, M6 Main Terminal — 40 in-lb

Mounting Torque, M6 Mounting — 40 in-lb

Weight — 400 Grams

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

–40 to 125 °C

stg

1200 Volts

CES

±20 Volts

GES

2500 Volts

ISO

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 300A, VGE = 15V, Tj = 125°C — 5.0 — Volts

Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 1360 — nC

Emitter-Collector Voltage** VEC IE = 300A, VGE = 0V — — 3.5 Volts

VCE = V

CES

VGE = V

GES

IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts

GE(th)

IC = 300A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts

CE(sat)

, VGE = 0V — — 1.0 mA

CES

, VCE = 0V — — 1.0 µA

GES

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Inductive Turn-on Delay Time t

Load Rise Time tr VCC = 600V, IC = 300A, — — 80 ns

Switch Turn-off Delay Time t

Time Fall Time tf Inductive Load Switching Operation, — — 150 ns

Diode Reverse Recovery Time** trr IE = 300A — — 250 ns

Diode Reverse Recovery Charge** Qrr — 13 — µC

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

— — 47 nf

ies

VCE = 10V, VGE = 0V — — 4.0 nf

oes

— — 0.9 nf

res

— — 300 ns

d(on)

d(off)

V

GE1

= V

= 15V, RG = 1.0Ω, — — 500 ns

GE2

rating.

j(max)

2 Rev. 01/06

2

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 [phone]

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, C

ies

, C

oes

, C

res

, (nF)

CAPACITANCE VS. V

CE

(TYPICAL)

10

0

10

2

10

2

10

1

10

0

10

-1

10

1

0 1 3 42 5

10

1

EMITTER-COLLECTOR VOLTAGE,

VEC, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

10

2

10

3

EMITTER CURRENT, I

E

, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE, V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

10

6 8

10 1412 16 18 20

8

6

4

2

0

Tj = 25°C

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

TRANSFER CHARACTERISTICS

(TYPICAL)

600

500

400

300

0

5

15

200

100

0

20

VGE = 10V

Tj = 25°C
Tj = 125°C

Tj = 25°C

Tj = 125°C

VGE = 0V

C

ies

C

oes

C

res

IC = 600A

IC = 300A

IC = 120A

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

COLLECTOR CURRENT, I

C

, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

0 2 4 6 8 10

100

0

VGE = 20V

10

11

12

13

14

15

9

8

Tj = 25

o

C

200

300

600

400

500

10

COLLECTOR-CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER

SATURATION VOLTAGE,

V

CE(sat)

, (VOLTS)

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

9

4

5

6

3

0

100

300

7

2

8

1

0

600400 500

VGE = 15V

Tj = 25°C
Tj = 125°C

200

10

-1

CM300DY-24NFH
Dual IGBTMOD™ NFH-Series Module

300 Amperes/1200 Volts

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

Point per Outline Drawing

Thermal Resistance, Junction to Case R

TC Reference Point Under Chips

Thermal Resistance, Junction to Case R

TC Reference Point Under Chips

Contact Thermal Resistance R

External Gate Resistance RG 1.0 — 10 Ω

Q Per IGBT 1/2 Module, TC Reference — — 0.11 °C/W

th(j-c)

D Per FWDi 1/2 Module, TC Reference — — 0.18 °C/W

th(j-c)

'Q Per IGBT 1/2 Module, — — 0.066 °C/W

th(j-c)

'D Per FWDi 1/2 Module, — — 0.1 °C/W

th(j-c)

Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W

th(c-f)

3Rev. 01/06

3

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697-1800 [phone]

E

rr

TIME, (s)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDi)

10

0

10

-5

10

-4

10

-3

10

-1

10

-2

10

-3

10-310

-2

10

-1

10

0

10

1

10

-1

10

-2

10

-3

Z

th

= R

th

• (NORMALIZED VALUE)

Single Pulse
TC = 25C
Pe

r Unit Base =

R

th(j-c)

=

0.11C/W
(IGBT)
R

th(j-c)

=

0.18C/W
(FWDi)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

th(j-c')

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, V

GE

, (VOLTS)

GATE CHARGE VS. V

GE

20

0

16

12

8

4

0

400 800 1200 20001600

VCC = 600V

VCC = 400V

IC = 300A

COLLECTOR CURRENT, IC, (AMPERES)

10

3

10

1

10

2

10

2

10

0

10

1

SWITCHING TIME, (ns)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

t

d(off)

t

d(on)

t

r

VCC = 600V
VGE = 15V
RG = 1.0Ω
Tj = 125C
Inductive Load

t

f

10

3

EMITTER CURRENT,

IE, (AMPERES)

REVERSE RECOVERY TIME, t

rr

, (ns)

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

10

3

10

1

10

2

10

2

10

1

10

3

10

2

10

1

REVERSE RECOVERY CURRENT, I

rr

, (AMPERES)

10

3

VCC = 600V
VGE = 15V
RG = 1.0Ω

Tj = 25C
Inductive Load

I

rr

t

rr

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

10

3

SWITCHING LOSS VS.

COLLECTOR CURRENT

(TYPICAL)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, E

SW(on)

, E

SW(off)

, (mJ/PULSE)

10

2

10

0

10

1

10

1

10

0

10

2

SWITCHING LOSS VS.

GATE RESISTANCE

(TYPICAL)

EMITTER CURRENT, IE, (AMPERES)

REVERSE RECOVERY

SWITCHING LOSS,

E

rr

, (mJ/PULSE)

10

2

10

1

10

2

10

1

10

0

10

3

REVERSE RECOVERY SWITCHING LOSS VS.

EMITTER CURRENT

(TYPICAL)

VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
C Snubber at Bus

E

SW(on)

E

SW(off)

VCC = 600V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive Load
C Snubber at Bus

E

SW(on)

E

SW(off)

VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 125°C
Inductive Load
C Snubber at Bus

CM300DY-24NFH
Dual IGBTMOD™ NFH-Series Module

300 Amperes/1200 Volts

4 Rev. 01/06

4