POWEREX CM300DY-24H Datasheet
CM300DY-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
C2E1
C F
S - M6 THD.
(3 TYP)
E
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.661±0.01 93.0±0.25
C 3.15 80.0
D 2.441±0.01 62.0±0.25
E 1.18 Max. 30.0 Max.
F 1.18 30.0
G 0.98 25.0
H 0.85 21.5
J 0.83 21.2
N
K
J
B
M
E2 C1
G
G
K
E2 C1
Dimensions Inches Millimeters
C2E2
E1C1
H
N
K
K 0.71 18.0
L 0.59 15.0
M 0.55 14.0
N 0.28 7.0
P 0.26 Dia. Dia. 6.5
Q 0.33 8.5
R 0.24 6.0
S M6 Metric M6
P - DIA.
(4 TYP.)
.110 TAB
Q
R
L
D
R
N
E1C1 E2 C2
Dual IGBTMOD™
H-Series Module
300 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM300DY-24H
is a 1200V (V
Dual IGBTMOD™ Power Module.
Type Current Rating V
CM 300 24
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 300 Ampere
CES
Amperes Volts (x 50)
CES
273
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DY-24H
Dual IGBTMOD™ H-Series Module
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM300DY-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M6 Terminal Screws – 26 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 500 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
300 Amperes
600* Amperes
300 Amperes
600* Amperes
2100 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)IC
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5
GES
µ
IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts
= 300A, VGE = 15V–2.53.4**Volts
A
IC = 300A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 300A, VGS = 15V – 1500 – nC
IE = 300A, VGS = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = MHz – – 21 nF
VCC = 600V, IC = 300A, – – 500 ns
V
= V
GE1
= 15V, RG = 1.0Ω – – 350 ns
GE2
IE = 300A, diE/dt = –600A/µs – – 250 ns
IE = 300A, diE/dt = –600A/µs – 2.23 –
– – 60 nF
–– 12nF
– – 250 ns
– – 350 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.035 °C/W
Per IGBT – – 0.06 °C/W
Per FWDi – – 0.12 °C/W
274
Loading...