Powerex CM300DX-24S Data Sheet

CM300DX-24S

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

D

E

FJ J

G

H

46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

Q

S

T

U

R

S

T

U

Q

W

V

AK

AW

AX

DETAIL "B"

47

48

12345678910111213141516171819202122

X

AT
AU

KK

L

M

AV

G2(38)

E2(39)

K

N

DETAIL "A"

E1C2(24) E1C2(23)

Tr 2

E2

(47)

Di2

C1

(48)

Di1

DETAIL "B"

Tr 1

Th

NTC

TH1

(1)

P

C1(22)
E1(16)

G1(15)

TH2

(2)

24

23

L

*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5

Y
(4 PLACES)

ZAAAB

AC (4 PLACES)

AL

AM

C

AP

AN

AQ

B

AG

AR

AS

DETAIL "A"

AH

AJ

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.98 152.0
B 2.44 62.0
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 5.39 137.0
E 4.79 121.7
F 4.33±0.02 110.0±0.5
G 3.89 99.0
H 3.72 94.5
J 0.53 13.5
K 0.15 3.8
L 0.28 7.25
M 0.30 7.75
N 1.95 49.54
P 0.9 22.86
Q 0.55 14.0
R 0.87 22.0
S 0.67 17.0
T 0.48 12.0
U 0.24 6.0
V 0.16 4.2
W 0.37 6.5
X 0.83 21.14
Y M6 M6

Dimensions Inches Millimeters

Z 1.53 39.0
AA 1.97±0.02 50.0±0.5
AB 2.26 57.5
AC 0.22 Dia. 5.5 Dia.
AD 0.67+0.04/-0.02 17.0+1.0/-0.5
AE 0.51 13.0
AF 0.27 7.0
AG 0.03 0.8
AH 0.81 20.5
AJ 0.12 3.0
AK 0.14 3.5
AL 0.21 5.4
AM 0.49 12.5
AN 0.15 3.81
AP 0.05 1.15
AQ 0.025 0.65
AR 0.29 7.4
AS 0.05 1.2
AT 0.17 Dia. 4.3 Dia.
AU 0.10 Dia. 2.5 Dia.
AV 0.08 Dia. 2.1 Dia.
AW 0.06 1.5
AX 0.49 12.5

AD

AE

Dual IGBTMOD™
NX-S Series Module

300 Amperes/1200 Volts

AF

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast Recovery

£ Isolated Baseplate for Easy

Applications:

£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM300DX-24S is a 1200V (V
300 Ampere Dual IGBTMOD™
Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 300 24

CE(sat)

Free-Wheel Diode

Heat Sinking

),

CES

V

CES

110/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM300DX-24S
Dual IGBTMOD™ NX-S Series Module

300 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol CM300DX-24S Units

Maximum Junction Temperature T

Operating Power Device Junction Temperature T

Storage Temperature T

+175 °C

j(max)

-40 to 150 °C

j(op)

-40 to 125 °C

stg

Mounting Torque, M5 Mounting Screws — 31 in-lb

Mounting Torque, M6 Main Terminal Screws — 40 in-lb

Module Weight (Typical) — 330 Grams

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

2500 V

ISO

rms

Inverter Sector

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 119°C)

*1,*5

IC 300 Amperes

Collector Current (Pulse)*4 I

Total Power Dissipation (TC = 25°C)

Emitter Current, Free Wheeling Diode Forward Current (TC = 25°C)

*1,*5

P

*1,*5

I

Emitter Current, Free Wheeling Diode Forward Current (Pulse)*4 I

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*4 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
*5 Junction temperature (Tj) should not increase beyond maximum junction temperature (T

j(max)

) rating.

j(max)

rating.

1200 Volts

CES

±20 Volts

GES

600 Amperes

CRM

2270 Watts

tot

*3

300 Amperes

E

*3

600 Amperes

ERM

2 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM300DX-24S
Dual IGBTMOD™ NX-S Series Module

300 Amperes/1200 Volts

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Inverter Sector

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Chip) IC = 300A, VGE = 15V, Tj = 125°C — 1.9 — Volts

IC = 300A, VGE = 15V, Tj = 150°C — 1.95 — Volts

Collector-Emitter Saturation Voltage V

(Terminal) IC = 300A, VGE = 15V, Tj = 125°C*6 — 2.05 — Volts

IC = 300A, VGE = 15V, Tj = 150°C*6 — 2.1 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge QG VCC = 600V, IC = 300A, VGE = 15V — 700 — nC

Inductive Turn-on Delay Time t

Load Turn-on Rise Time tr VCC = 600V, IC = 300A, *7 — — 200 ns

Switch Turn-off Delay Time t

Time Turn-off Fall Time tf RG = 2.7Ω, Inductive Load, — — 300 ns

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Loss per Pulse Eon VCC = 600V, IC (IE) = 300A, *7 — 48 — mJ

Turn-off Switching Loss per Pulse E

Reverse Recovery Loss per Pulse E

Emitter-Collector Voltage V

(Chip) IE = 300A, VGE = 0V, Tj = 125°C — 1.7 — Volts

IE = 300A, VGE = 0V, Tj = 150°C — 1.7 — Volts

Emitter-Collector Voltage V

(Terminal) IE = 300A, VGE = 0V, Tj = 125°C*6 — 1.85 — Volts

IE = 300A, VGE = 0V, Tj = 150°C*6 — 1.85 — Volts

VCE = V

CES

±VGE = V

GES

IC = 30mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 300A, VGE = 15V, Tj = 25°C — 1.7 2.15 Volts

CE(sat)

IC = 300A, VGE = 15V, Tj = 25°C*6 — 1.85 2.3 Volts

CE(sat)

— — 30 nF

ies

VGE = 0V, VCE = 10V — — 6.0 nF

oes

— — 0.50 nF

res

— — 800 ns

d(on)

VGE = ±15V, — — 600 ns

d(off)

*3

IE = 300A — — 300 ns

rr

*3

— 16 — µC

rr

VGE = ±15V, RG = 2.7Ω, — 32 — mJ

off

*3

Tj = 150°C, Inductive Load — 18 — mJ

rec

*3

IE = 300A, VGE = 0V, Tj = 25°C — 1.7 2.15 Volts

EC

*3

IE = 300A, VGE = 0V, Tj = 25°C*6 — 1.85 2.3 Volts

EC

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*1 R

Thermal Resistance, Junction to Case*1 R

Internal Gate Resistance rg Per Switch — 6.5 — Ω

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*3 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Recommended maximum collector supply voltage VCC is 800Vdc.

Q Per IGBT — — 0.066 K/W

th(j-c)

D Per FWDi — — 0.12 K/W

th(j-c)

310/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM300DX-24S
Dual IGBTMOD™ NX-S Series Module

300 Amperes/1200 Volts

NTC Thermistor Sector, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ

Deviation of Resistance ∆R/R TC = 100°C, R

B Constant B

Approximate by Equation*9 — 3375 — K

(25/50)

= 493Ω –7.3 — +7.8 %

100

Power Dissipation P25 TC = 25°C — — 10 mW

Module, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Lead Resistance (Main Terminals-Chip) R

Contact Thermal Resistance*1 R

(Case to Heatsink) (Per 1 Module)

*1 Case temperature (TC) and heatsink temperature (Tf) measured point is just under the chips.
*2 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].

*9 B

(25/50)

R
T25 = 25 [°C] + 273.15 = 298.15 [K], T50 = 50 [°C] + 273.15 = 323.15 [K]

= In(

R

25

)/( 1 –

50 T25 T50

1

) R25; Resistance at Absolute Temperature T25 [K], R50; resistance at Absolute Temperature T50 [K],

TC = 25°C (Per Switch) — — 0.9 mΩ

lead

Thermal Grease Applied — 0.015 — K/W

th(c-f)

*2

4 10/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM300DX-24S
Dual IGBTMOD™ NX-S Series Module

300 Amperes/1200 Volts

OUTPUT CHARACTERISTICS

(INVERTER PART - CHIP - TYPICAL)

600

500

Tj =
25°

C

15

VGE = 20V

13.5

400

, (AMPERES)

C

300

200

100

COLLECTOR CURRENT, I

0

0 2 4 6 8 10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

(INVERTER PART - CHIP - TYPICAL)

3

10

10

, (AMPERES)

E

10

EMITTER CURRENT, I

10

10

10

Tj = 25°C

= 125°C

T

j

= 150°C

T

2

1

0

3

2

j

0 1.0 0.5 2.51.5 2.0 3.0

EMITTER-COLLECTOR VOLTAGE, V

SWITCHING TIME VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

t

f

t

r

12

11

10

9

t

d(off)

, (VOLTS)

EC

t

d(on)

SATURATION VOLTAGE CHARACTERISTICS

3.5

3.0

, (VOLTS)

2.5

CE(sat)

2.0

COLLECTOR-EMITTER

(INVERTER PART - CHIP - TYPICAL)

VGE = 15V

Tj = 25°C

= 125°C

T

j

= 150°C

T

j

1.5

COLLECTOR-EMITTER

1.0

0.5

SATURATION VOLTAGE, V

0

0

COLLECTOR CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

(INVERTER PART - TYPICAL)

2

10

, (nF)

1

10

res

, C

oes

, C

ies

0

10

-1

10

CAPACITANCE, C

-2

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

10

(ns)

rr

(A), t

rr

2

10

0

10

(INVERTER PART - TYPICAL)

I

rr

t

rr

10

CE

C

ies

C

oes

C

res

VGE = 0V

1

SATURATION VOLTAGE CHARACTERISTICS

10

8

, (VOLTS)

CE(sat)

6

4

COLLECTOR-EMITTER

COLLECTOR-EMITTER

(INVERTER PART - CHIP - TYPICAL)

Tj = 25°C

IC = 600A

IC = 300A

IC = 120A

2

SATURATION VOLTAGE, V

0

600400 500300100 200

2

10

6 8 10 1412 16 18 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(INVERTER PART - TYPICAL)

3

10

t

d(off)

t

d(on)

2

10

SWITCHING TIME, (ns)

1

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

GATE CHARGE VS. V

20

IC = 300A
V

= 600V

CC

15

, (VOLTS)

GE

2

10

(INVERTER PART)

t

f

t

r

VCC = 600V
V

= ±15V

GE

R

= 2.7Ω

G

T

= 150°C

j

Inductive Load

GE

3

10

10

SWITCHING TIME, (ns)

1

10

-1

10

VCC = 600V
V

GE

I

= 300A

C

T

= 150°C

j

Inductive Load

0

10

GATE RESISTANCE, RG, (Ω)

1

10

= ±15V

2

10

REVERSE RECOVERY, I

1

10

1

10

EMITTER CURRENT, IE, (AMPERES)

10

VCC = 600V
V
R
T
Inductive Load

2

= ±15V

GE

= 2.7Ω

G

= 150°C

j

5

GATE-EMITTER VOLTAGE, V

3

10

0

200 400 600 1000800

0

GATE CHARGE, Q

G

, (nC)

510/10 Rev. 1

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

CM300DX-24S
Dual IGBTMOD™ NX-S Series Module

300 Amperes/1200 Volts

SWITCHING LOSS VS.

COLLECTOR CURRENT

(INVERTER PART - TYPICAL)

2

10

, (mJ/PULSE)

off

, E

on

1

10

VCC = 600V
V
R
T
L
Inductive Load

SWITCHING LOSS, E

0

10

1

10

COLLECTOR CURRENT, IC, (AMPERES)

REVERSE RECOVERY SWITCHING LOSS VS.

2

10

, (mJ/PULSE)

rr

1

10

REVERSE RECOVERY

SWITCHING LOSS, E

0

10

10

GATE RESISTANCE

(INVERTER PART - TYPICAL)

VCC = 600V
V

= ±15V

GE

I

= 300A

C

T

= 150°C

j

L

= 50nH

s

Inductive Load

-1

GATE RESISTANCE, R

2

10

E

0

10

10

= ±15V

GE

= 2.7Ω

G

= 150°C

j

= 50nH

s

rr

1

, (Ω)

G

SWITCHING LOSS VS.

GATE RESISTANCE

(INVERTER PART - TYPICAL)

2

10

, (mJ/PULSE)

off

, E

on

1

10

E

on

E

off

3

10

2

10

SWITCHING LOSS, E

0

10

-1

10

IMPEDANCE CHARACTERISTICS

10-310

0

th(j-c')

10

-1

10

Single Pulse
T

C

Per Unit Base =
R

th(j-c)

• (NORMALIZED VALUE)

0.66°C/W

-2

10

th

(IGBT)

= R

th

R

th(j-c)

Z

0.12°C/W
(FWDi)

-3

10

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

0

10

GATE RESISTANCE, RG, (Ω)

TRANSIENT THERMAL

(INVERTER PART - TYPICAL)

-2

= 25°C

=

=

-1

10

-5

10

TIME, (s)

VCC = 600V
V

= ±15V

GE

I

= 300A

C

T

= 150°C

j

L

= 50nH

s

Inductive Load

E

on

E

off

1

10

0

10

-4

10

2

10

1

10

-1

10

-2

10

-3

10

-3

10

REVERSE RECOVERY SWITCHING LOSS VS.

2

10

, (mJ/PULSE)

rr

1

10

REVERSE RECOVERY

SWITCHING LOSS, E

0

10

10

EMITTER CURRENT

(INVERTER PART - TYPICAL)

VCC = 600V
V

= ±15V

GE

R

= 2.7Ω

G

T

= 150°C

j

L

= 50nH

s

Inductive Load

1

EMITTER CURRENT, IE, (AMPERES)

2

10

E

rr

3

10

6 10/10 Rev. 1