POWEREX CM300DU-24H Datasheet

CM300DU-24H

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

B

E

R

S - NUTS
(3 TYP)

C

CM

A

D

C

25 25

Q Q

C2E1

L

E2

E2

C2E1

K K K

T - (4 TYP.)

H

G2
E2

J

C1

E1
G1

P

X

H

V - THICK x W - WIDE
TAB (4 PLACES)

M

F

G2
E2

C1

E1
G1

F

G

Dual IGBTMOD™
U-Series Module

300 Amperes/1200 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half­bridge configuration with each
transistor having a reverse-con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery

□ Isolated Baseplate for Easy

CE(sat)

(135ns) Free-Wheel Diode
Heat Sinking

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.33 110.0
B 3.15 80.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 14.0±0.25
F 0.83 21.0
G 0.16 4.0
H 0.24 6.0

J 0.59 15.0

K 0.55 14.0

Dimensions Inches Millimeters

M 0.33 8.5

P 0.94 24.0
Q 0.98 25.0
R 0.86 21.75

SM6 M6

T 0.26 6.5

V 0.02 0.5
W 0.110 2.79

X 1.08 27.35

Applications:

□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies

Ordering Information:

Example: Select the complete
module number you desire from
the table - i.e. CM300DU-24H is a
1200V (V

), 300 Ampere Dual

CES

IGBTMOD™ Power Module.

Type Amperes Volts (x 50)

Current Rating V

CM 300 24

CES

61

61

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM300DU-24H
Dual IGBTMOD™ U-Series Module

300 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM300DU-24H Units

Junction T emper ature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
300 Amperes

600* Amperes

300 Amperes
600* Amperes
1130 Watts

2500 Volts

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 30mA, VCE = 10V 4.5 6 7.5 Volts

IC = 300A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 300A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G

EC

VCC = 600V, IC = 300A, VGE = 15V – 1125 – nC

IE = 300A, VGE = 0V – – 3.2 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Tur n-on Delay Time t

d(on)

Load Rise Time t
Switch Tur n-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

r

f

rr

rr

VCE = 10V, VGE = 0V – – 15 nf

VCC = 600V, IC = 300A, – – 200 ns

V

= V

GE1

= 15V, – – 300 ns

GE2

RG = 1.0V, Resistive – – 300 ns

Load Switching Operation – – 350 ns
IE = 300A, diE/dt = -600A/µs – – 300 ns
IE = 300A, diE/dt = -600A/µs – 1.65 – µC

––45nf

––9nf

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

62

62

Q Per IGBT 1/2 Module – – 0.11 °C/W

th(j-c)

D Per FWDi 1/2 Module – – 0.18 °C/W

th(j-c)

th(c-f)

Per Module, Thermal Grease Applied – 0.010 – °C/W