POWEREX CM300DU-24F Datasheet

CM300DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
E
C
R
CM
S - NUTS (3 TYP)
C2E1
TC Measured
Point
C2E1
RTC
D
C
L
LABEL
T - (4 TYP.)
H
G2 E2
J
E2
E2
C1
2525
QQ
P
KKK
RTC
E1 G1
X
H
N
V - THICK x W - WIDE TAB (4 PLACES)
M
F
G2 E2
C1
E1 G1
F
G
Trench Gate Design Dual IGBTMOD™
300 Amperes/1200 Volts
Description:
Features:
Low Drive PowerLow VDiscrete Super-Fast Recovery
Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0 B 3.15 80.0 C 1.14 +0.04/-0.02 29.0 +1.0/-0.5 D 3.66±0.01 93.0±0.25 E 2.44±0.01 62.0±0.25 F 0.83 21.0 G 0.16 4.0 H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
Dimensions Inches Millimeters
M 0.33 8.5 N 0.10 2.5
P 0.85 21.5 Q 0.98 25.0 R 0.86 21.75
SM6 M6
T 0.26 Dia. 6.5 Dia.
V 0.02 0.5 W 0.110 2.79
X 1.08 27.35
Applications:
AC Motor ControlUPSBattery Powered Supplies
Ordering Information:
Example: Select the complete module number you desire from the table - i.e. CM300DU-24F is a 1200V (V
), 300 Ampere Dual
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 300 24
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DU-24F Trench Gate Design Dual IGBTMOD
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM300DU-24F Units
Junction Temperature T Storage Temperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current (Tj 150°C) I Emitter Current** (Tc = 25°C) I Peak Emitter Current** I Maximum Collector Dissipation (Tc = 25°C) P
j
stg CES GES
C CM
E EM
c
Mounting Torque, M6 Main Terminal 40 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 580 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C 1200 Volts
±20 Volts 300 Amperes
600* Amperes
300 Amperes
600* Amperes
890 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I Gate Leakage Voltage I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
Total Gate Charge Q Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES GES
GE(th)
CE(sat)
G
EC
VCE = V VGE = V
, VGE = 0V ––1mA
CES
, VCE = 0V ––40 µA
GES
IC = 30mA, VCE = 10V 5 6 7 Volts
IC = 300A, VGE = 15V, Tj = 25°C 1.8 2.4 Volts
IC = 300A, VGE = 15V, Tj = 125°C 1.9 Volts
VCC = 600V, IC = 300A, VGE = 15V 3300 nC
IE = 300A, VGE = 0V ––3.2 Volts
rating.
j(max)
2
2
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