CM300DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
E
C
R
CM
S - NUTS
(3 TYP)
C2E1
TC Measured
Point
C2E1
RTC
D
C
L
LABEL
T - (4 TYP.)
H
G2
E2
J
E2
E2
C1
2525
QQ
P
KKK
RTC
E1
G1
X
H
N
V - THICK x W - WIDE
TAB (4 PLACES)
M
F
G2
E2
C1
E1
G1
F
G
Trench Gate Design
Dual IGBTMOD™
300 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected
super-fast recover y free-wheel
diode. All components and interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.33 110.0
B 3.15 80.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 2.44±0.01 62.0±0.25
F 0.83 21.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
K 0.55 14.0
Dimensions Inches Millimeters
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.86 21.75
SM6 M6
T 0.26 Dia. 6.5 Dia.
V 0.02 0.5
W 0.110 2.79
X 1.08 27.35
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM300DU-24F is a
1200V (V
), 300 Ampere Dual
CES
IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 300 24
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM300DU-24F
Trench Gate Design Dual IGBTMOD™
300 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM300DU-24F Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 580 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
300 Amperes
600* Amperes
300 Amperes
600* Amperes
890 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
Total Gate Charge Q
Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES
GES
GE(th)
CE(sat)
G
EC
VCE = V
VGE = V
, VGE = 0V ––1mA
CES
, VCE = 0V ––40 µA
GES
IC = 30mA, VCE = 10V 5 6 7 Volts
IC = 300A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts
IC = 300A, VGE = 15V, Tj = 125°C – 1.9 – Volts
VCC = 600V, IC = 300A, VGE = 15V – 3300 – nC
IE = 300A, VGE = 0V ––3.2 Volts
rating.
j(max)
2
2