Powerex CM225DX-24S1 Data Sheet

2 2

5

Dual switch (Half-Bridge)

OUTLINE DRAWING & INTERNAL CONNECTION

Dimension in mm

TERMINAL t=0.8

SECTION A

DETAIL B

SECTION C-C

INTERNAL CONNECTION

Di1

Di2

Tr1

9

Th

Tr2

NTC

8

1 2 3 4 5

6

7

10

11

over 30

to 120

±0.8

< IGBT MODULES >

CM225DX-24S1

HIGH POWER SWITCHING USE
INSULATE D TYPE

Collector current IC .............….......................…

Collector-emitter voltage V
Maximum junction temperature T

●Flat base Type

●Copper base plate (non-plating)

●Tin plating pin terminals

●RoHS Directive compliant

●Recognized under UL1557, File E323585

APPLICATION

AC Motor Control, Motion/Servo Control, Power suppl y, etc.

......................… 1 2 0 0 V

CES

.............. 1 7 5 °C

jmax

A

Publication Date : December 2013

Terminal code

1

TH1

2

TH2

3

G1

4

Es1

5

Cs1

6

C2E1

7

C2E1

8

G2

9

Es2

10

E2

11

C1

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5

over 120 to 400 ±1.2

1

< IGBT MODULES >

V

Collector-emitter voltage

G-E short-circuited

1200

V

V

GES

Gate-emitter voltage

C-E short-circuited

± 20

V

(Note2, 4)

Pulse, Repetitive, V

GE

15 V

(Note3)

P

Total power dissipation

TC=25 °C

(Note2, 4)

1250

W

IE

DC

225

ERM

(Note1)

(Note3)

V

Isolation voltage

Terminals to base plate, RMS, f=60 Hz, AC 1 min

4000

V

T

jmax

Maximum junction temperature

Instantaneous event (overload)

175

T

Cmax

Maximum case temperature

(Note4)

125

T

Storage temperature

-

-40 ~ +125

Min.

Typ.

Max.

I

CES

Collector-emitter cut-off current

VCE=V

CES

, G-E short-circuited

- - 1.0

mA

I

GES

Gate-emitter leakage current

VGE=V

GES

, C-E short-circuited

- - 0.5

μA

IC=225 A, VGE=15 V,

Tj=25 °C

-

1.90

2.35

Refer to the figure of test circuit

Tj=125 °C

-

2.10

-

(Note5)

Tj=150 °C

-

2.15

-

VGE=15 V,

Tj=125 °C

-

2.00

-

Tj=150 °C

-

2.05

-

C

ies

Input capacitance

- - 20

C

Reverse transfer capacitance

- - 0.33

QG

Gate charge

VCC=600 V, IC=225 A, VGE=15 V

-

420 - nC

t

d(on)

Turn-on delay time

- - 800

t

Turn-off delay time

- - 600

tf

Fall time - -

300

IE=225 A, G-E short-circuited,

Tj=25 °C

-

2.75

3.55

(Note5)

Tj=150 °C

-

2.20

-

IE=225 A,

Tj=25 °C

-

2.65

3.45

G-E short-circuited,

Tj=125 °C

-

2.20

-

(Note5)

t

(Note1)

Reverse recovery time

VCC=600 V, IE=225 A, VGE=±15 V,

- - 300

ns

Qrr

(Note1)

Reverse recovery charge

RG=1.5 Ω, Inductive load

-

6.0 - μC

Eon

Turn-on switching energy per pulse

VCC=600 V, IC=IE=225 A,

-

21.7

-

Err

(Note1)

Reverse recovery energy per pulse

Inductive load

-

17.1 - mJ

Main terminals-chip, per switch,

CM225DX-24S1

HIGH POWER SWITCHING USE
INSULATE D TYPE

MAXIMUM RATINGS (T

=25 °C, unless otherwise specified )

j

INVERTER PART IGBT/DIODE

Symbol Item Conditions Rating Unit

CES

IC
I

I

CRM

tot

(Note1)

Collector current

Emitter current

Pulse, Repetitive

DC, TC=96 °C

(Note2)

225

=

450

450

MODULE

Symbol Item Conditions Rating Unit

isol

T

Operating junction temperature Continuous operation (under switching) -40 ~ +150

j op

stg

ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified )

INVERTER PART IGBT/DIODE

Symbol Item Conditions

Limits

A

A

°C

°C

Unit

V

Gate-emitter threshold voltage IC=22.5 mA, VCE=10 V 5.4 6.0 6.6 V

GE(th)

V

CE sat

(Terminal)

Collector-emitter saturation voltage

V

CE sat

(Chip)

C

Output capacitance - - 4.0

oes

res

tr Rise time - - 200

d(off)

(Note1)

VEC

(Terminal)

IC=225 A, Tj=25 °C - 1.80 2.25

(Note5)

VCE=10 V, G-E short-circuited

VCC=600 V, IC=225 A, VGE=±15 V,

RG=1.5 Ω, Inductive load

Refer to the figure of test circuit Tj=125 °C - 2.30 -

V

V

nF

ns

V

Emitter-collector voltage

(Note1)

VEC

(Chip)

rr

Tj=150 °C - 2.10 -

V

E

Turn-off switching energy per pulse VGE=±15 V, RG=1.5 Ω, Tj=150 °C, - 23.1 -

off

R

Internal lead resistance

CC'+EE'

rg Internal gate resistance Per switch - 3.2 - Ω

Publication Date : December 2013

TC=25 °C

(Note4)

2

mJ

- - 1.0 mΩ

< IGBT MODULES >

Min.

Typ.

Max.

R25

Zero-power resistance

TC=25 °C

4.85

5.00

5.15

kΩ

100

(Note4)

(Note6)

P25

Power dissipation

TC=25 °C

(Note4)

- - 10

mW

Limits

Min.

Typ.

Max.

(Note4)

R

Junction to case, per Inverter DIODE

(Note4)

- - 0.18

Case to heat sink, per 1 module,

(Note4, 7)

Mt

Mounting torque

Main terminals

M 6 screw

3.5

4.0

4.5

N·m

Ms

Mounting torque

Mounting to heat sink

M 5 screw

2.5

3.0

3.5

N·m

Terminal to base plate

18.5 - -

Terminal to terminal

10 - -

(Note8)

)

TT

/()

R

R

ln(B

)/(

502550

25

5025

11

−=

Y

X

+:Convex

-:Concave

+:Convex

-:Concave

mounting s

ide

mounting side

mounting side

CM225DX-24S1

HIGH POWER SWITCHING USE
INSULATE D TYPE

ELECTRICAL CHARACTERISTICS (cont.; T

=25 °C, unless otherwise specified )

j

NTC THERMISTOR PART

Symbol Item Conditions

(Note4)

ΔR/R Deviation of resistance R
B

B-constant Approximate by equation

(25/50)

=493 Ω, TC=100 °C

-7.3 - +7.8 %

- 3375 - K

Limits

Unit

THERMAL RESISTANCE CHARACTERISTICS

Symbol Item Conditions

R

R

th(j-c)Q

th(j-c)D

Contact thermal resistance

th(c-s)

Thermal resistance

Junction to case, per Inverter IGBT

Thermal grease applied

- - 0.12

- 15 - K/kW

Unit

K/W

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

m mass - - 350 - g
ds Creepage distance

Terminal to terminal 17 - -

Limits

Min. Typ. Max.

Unit

mm

da Clearance
ec Flatness of base plate On the centerline X, Y

Terminal to base plate 16.3 - -

±0 - +100 μm

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE)

2. Junction temperature (T

3. Pulse width and repetition rate should be such that the device junction temperature (T

4. Case temperature (T

) should not increase beyond T

j

) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate and heat sink

C

jmax

rating.

) dose not exceed T

j

just under the chips. Refer to the figure of chip location.

5. Pulse width and repetition rate should be such as to cause negligible temperature rise.

6.
R

: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

25

: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

R

50

,

7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on thickness (t1.6~t2.0) of the PCB.

jmax

mm

rating.

Publication Date : December 2013

3