POWEREX CM20TF-12H Datasheet
CM20TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
P
D
H
N
.110 TAB
G
N
P
GuP
SuP
U
GuN
SuN SvN SwN
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.54 90.0
B 2.99±0.01 76.0±0.2
C 2.52 64.0
D 1.54 39.0
E 0.98 25.0
F 0.90 23.0
G 0.87 22.0
H 0.75 19.0
J 0.71 18.0
GvP
SvP
GvN
LKK
GuP
SuP GvP SvP GwP SwP
GuN GvN GwNSuN SvN SwN
QPQ
S
C
VW
Dimensions Inches Millimeters
M
WVU
SS
.250 TAB
GwP
SwP
GwN
K 0.67 17.0
L 0.63 16.0
M 0.59 15.0
N 0.56 14.1
P 0.51 13.0
Q 0.43 11.0
R 0.26 6.5
S 0.24 6.0
T 0.22 Dia. Dia. 5.5
T - DIA.
(2 TYP.)
E
J
F
R
Six-IGBT IGBTMOD™
H-Series Module
20 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules are
designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM20TF-12H
is a 600V (V
IGBT IGBTMOD™ Power Module.
Type Current Rating V
CM 20 12
CE(sat)
(70ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
), 20 Ampere Six-
CES
Amperes Volts (x 50)
CES
299
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM20TF-12H
Six-IGBT IGBTMOD™ H-Series Module
20 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM20TF-12H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M5 Mounting Screws – 17 in-lb
Module Weight (Typical) – 150 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to +150 °C
–40 to +125 °C
600 Volts
±20 Volts
20 Amperes
40* Amperes
20 Amperes
40* Amperes
125 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5
GES
IC = 2mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 20A, VGE = 15V – 2.1 2.8** Volts
µ
A
IC = 20A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 300V, IC = 20A, VGS = 15V – 60 – nC
IE = 20A, VGS = 0V – – 2.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V, f = 1MHz – – 0.7 nF
VCC = 300V, IC = 20A, – – 300 ns
V
= V
GE1
= 15V, RG = 31Ω – – 200 ns
GE2
IE = 20A, diE/dt = –40A/µs – – 110 ns
IE = 20A, diE/dt = –40A/µs – 0.05 –
– – 2.0 nF
– – 0.4 nF
– – 120 ns
– – 300 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.092 °C/W
Per IGBT – – 1.00 °C/W
Per FWDi – – 3.50 °C/W
300
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