POWEREX CM200TU-5F Datasheet
CM200TU-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
A
B
C
D
Measured
Point
5 - M5 NUTS
P
TC
GuP
EuP
GuP
EuP
EE
GvP
EvP
U
G
EE
F
GwP
EwP
v
u
H
J
GvP
EvP
V
G
EHHS
GuN
EuN
w
H
J
GvN
EvN
E
GwP
EwP
N
W
T
C
Measured
Point
GwN
EwN
0.110 - 0.5 Tab
P
Q
R 4 - Mounting
Holes
K
L
M
K
Trench Gate Design
Six IGBTMOD™
200 Amperes/ 250 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
CE(sat)
Free-Wheel Diode
Heat Sinking
GuN
EuN
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 3.54±0.01 90.0±0.25
C 4.02 102.0
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.91 23.0
G 0.47 12.0
H 0.85 21.7
J 0.91 23.0
GvN
EvN
GwN
EwN
Dimensions Inches Millimeters
K 0.15 3.75
L 0.67 17.0
M 1.91 48.5
N 0.03 0.8
P 0.32 8.1
Q 1.02 26.0
R 0.22 Dia. 5.5 Dia.
S 0.57 14.4
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200TU-5F is a
250V (V
), 200 Ampere Six-
CES
IGBT IGBTMOD™ Power Module.
Current Rating V
Type Amperes Volts (x 50)
CM 200 5
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200TU-5F
Trench Gate Design Six IGBTMOD™
200 Amperes/250 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200TU-5F Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 680 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C
250 Volts
±20 Volts
200 Amperes
400* Amperes
200 Amperes
400* Amperes
600 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
CES
IC = 20mA, VCE = 10V 3.0 4.0 5.0 Volts
IC = 200A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts
IC = 200A, VGE = 10V, Tj = 125°C – 1.1 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
G
EC
VCC = 100V, IC = 200A, VGE = 10V – – nC
IE = 200A, VGE = 0V – – 2.0 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
ies
oes
res
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 3.0 nf
VCC = 100V, IC = 200A, – – 700 ns
V
= V
GE1
= 10V, – – 1800 ns
GE2
RG = 13V, Resistive – – 700 ns
Load Switching Operation – – 500 ns
IE = 200A, diE/dt = -400A/µs––300ns
IE = 200A, diE/dt = -400A/µs– –µC
––66nf
– – 2.3 nf
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
2
Q Per IGBT 1/6 Module – – 0.21 °C/W
th(j-c)
R Per Free-Wheel Diode 1/6 Module – – 0.47 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.09 – °C/W
rating.
j(max)
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