POWEREX CM200TU-12F Datasheet
CM200TU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MEASURING
T
POINT
W - THICK x X - WIDE
S - NUTS (5 TYP)
EB
C
TAB (12 PLACES)
C
P
GUP
RTC
EUP
U
GUN
RTC RTC
EUN
N
GUP
J
K
CM
N
GVP
EUP
L
GUN
EVPLGWP
N
GVN EVN EWN
EUN
U
V
J
LL
NN
D
A
GVP
RTC
EVP
V
GVN
EVN
K
R
P
EWP
NL
GWN
W
J
GWP
EWP
GWN
EWN
M
L
RTC
RTC
W
T (4 TYP.)
P
Q
V
W - THICK x X - WIDE
TAB (12 PLACES)
F
A
TC
MEASURING
POINT
H
G
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 1.14 +0.04/-0.02 29.0 +1.0/-0.5
D 3.54±0.01 90.0±0.25
E 3.15±0.01 80.0±0.25
F 0.16 4.0
G 1.02 26.0
H 0.31 8.1
J 0.91 23.0
K 0.47 12.0
Dimensions Inches Millimeters
M 0.57 14.4
N 0.85 21.7
P 0.67 17.0
Q 1.91 48.5
R 0.15 3.75
SM5 M5
T 0.22 Dia. 5.5 Dia.
V 0.03 0.8
W 0.02 0.5
X 0.110 2.79
L 0.43 11.0
Trench Gate Design
Six IGBTMOD™
200 Amperes/ 600 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ UPS
□ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200TU-12F is a
600V (V
IGBT IGBTMOD™ Power Module.
Type Amperes Volts (x 50)
CM 200 12
CE(sat)
Free-Wheel Diode
Heat Sinking
), 200 Ampere Six-
CES
Current Rating V
CES
1
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200TU-12F
Trench Gate Design Six IGBTMOD™
200 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200TU-12F Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 680 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
200 Amperes
400* Amperes
200 Amperes
400* Amperes
590 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
Total Gate Charge Q
Emitter-Collector Voltage** V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CES
GES
GE(th)
CE(sat)
G
EC
VCE = V
VGE = V
, VGE = 0V ––1mA
CES
, VCE = 0V ––20 µA
CES
IC = 20mA, VCE = 10V 5 6 7 Volts
IC = 200A, VGE = 15V, Tj = 25°C – 1.6 2.2 Volts
IC = 200A, VGE = 15V, Tj = 125°C – 1.6 – Volts
VCC = 300V, IC = 200A, VGE = 15V – 1240 – nC
IE = 200A, VGE = 0V ––2.6 Volts
rating.
j(max)
2
2
Loading...