Powerex CM200HG-130H Data Sheet

CM200HG-130H

D

A

E

B

L (2 PLA

CES)

J

C

K (4 PLACES)

DETAIL “A”

DETAIL “A” DETAIL “B”

DETAIL “B”

H

F

G

M

V

X

Y

H

W

Q

S

R

T

V

U

N

P

Z

AA

CC

BB

BB

DD

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.51 140.0

B 2.87 73.0

C 1.89+0.04/-0.0 48.0+1.0/-0.0

D 4.88 124.0

E 2.24 57.0

F 0.85 21.6

G 0.51 12.9

H 0.20 5.0

J 1.73 44.0

K M6 Metric M6

L M8 Metric M8

M 0.64 16.2

N 1.59 40.4

P 1.10 28.0

Dimensions Inches Millimeters

Q 1.44 36.5

R 0.22 5.5

S 0.16 4.0

T 0.68 17.4

U 1.61 41.0

V 0.24 6.0

W 2.44 62.0

X 0.47 12.0

Y 0.14 3.5

Z 0.11 2.8

AA 0.06 1.6

BB 0.02 0.5

CC 0.05 Dia. 1.2 Dia.

DD 10° 10°

Single IGBTMOD™
HVIGBT Module

200 Amperes/6500 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies

Ordering Information:

Example: Select the complete
part module number you desire
from the table below -i.e.
CM200HG-130H is a 6500V
(V

CES

IGBTMOD™ Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 200 130

CE(sat)

), 200 Ampere Single

V

CES

18/05

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]

CM200HG-130H
Single IGBTMOD™ HVIGBT Module

200 Amperes/6500 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200HG-130H Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Operating Temperature T

Collector-Emitter Voltage (VGE = 0V, Tj = -40°C) V

Collector-Emitter Voltage (VGE = 0V, Tj = +25°C) V

Collector-Emitter Voltage (VGE = 0V, Tj = +125°C) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, Tc = 80°C) IC 200 Amperes

Peak Collector Current (Pulse) ICM 400* Amperes

Emitter Current** (Tc = 25°C) IE 200 Amperes

Emitter Surge Current** (Pulse) IEM 400* Amperes

Maximum Collector Dissipation (Tc = 25°C, IGBT Part, T

Partial Discharge (V1 = 6900 V

, V2 = 5100 V

rms

, 60 Hz (Acc. to IEC 1287)) Qpd 10 pC

rms

≤ 125°C) PC 2900 Watts

j(max)

Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Module Weight (Typical) – 0.52 kg

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V

Maximum Turn-Off Switching Current – 400 Amperes

(VCC ≤ 4500V, VGE = ±15V, R

≥ 72Ω, Tj = 125°C)

G(off)

Short Circuit Capability, Maximum Pulse Width – 10 µs

(VCC ≤ 4500V, VGE = ±15V, R

≥ 72Ω, Tj = 125°C)

G(off)

Maximum Reverse Recovery Instantaneous Power – 1200 kW
(VCC ≤ 4500V, die/dt ≤ 1000A/μs, Tj = 125°C)

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

oprmax

rating (125°C).

-40 to 125 °C

stg

-40 to 125 °C

opr

5800 Volts

CES

6300 Volts

CES

6500 Volts

CES

±20 Volts

GES

10200 Volts

iso

2 8/05