CM200HG-130H
D
A
E
B
L (2 PLA
CES)
J
C
K (4 PLACES)
DETAIL “A”
DETAIL “A” DETAIL “B”
DETAIL “B”
H
F
G
M
V
X
Y
H
W
Q
S
R
T
V
U
N
P
Z
AA
CC
BB
BB
DD
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.51 140.0
B 2.87 73.0
C 1.89+0.04/-0.0 48.0+1.0/-0.0
D 4.88 124.0
E 2.24 57.0
F 0.85 21.6
G 0.51 12.9
H 0.20 5.0
J 1.73 44.0
K M6 Metric M6
L M8 Metric M8
M 0.64 16.2
N 1.59 40.4
P 1.10 28.0
Dimensions Inches Millimeters
Q 1.44 36.5
R 0.22 5.5
S 0.16 4.0
T 0.68 17.4
U 1.61 41.0
V 0.24 6.0
W 2.44 62.0
X 0.47 12.0
Y 0.14 3.5
Z 0.11 2.8
AA 0.06 1.6
BB 0.02 0.5
CC 0.05 Dia. 1.2 Dia.
DD 10° 10°
Single IGBTMOD™
HVIGBT Module
200 Amperes/6500 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM200HG-130H is a 6500V
(V
CES
IGBTMOD™ Power Module.
Type Current Rating
Amperes Volts (x 50)
CM 200 130
CE(sat)
), 200 Ampere Single
V
CES
18/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200HG-130H Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature T
Operating Temperature T
Collector-Emitter Voltage (VGE = 0V, Tj = -40°C) V
Collector-Emitter Voltage (VGE = 0V, Tj = +25°C) V
Collector-Emitter Voltage (VGE = 0V, Tj = +125°C) V
Gate-Emitter Voltage (VCE = 0V) V
Collector Current (DC, Tc = 80°C) IC 200 Amperes
Peak Collector Current (Pulse) ICM 400* Amperes
Emitter Current** (Tc = 25°C) IE 200 Amperes
Emitter Surge Current** (Pulse) IEM 400* Amperes
Maximum Collector Dissipation (Tc = 25°C, IGBT Part, T
Partial Discharge (V1 = 6900 V
, V2 = 5100 V
rms
, 60 Hz (Acc. to IEC 1287)) Qpd 10 pC
rms
≤ 125°C) PC 2900 Watts
j(max)
Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Module Weight (Typical) – 0.52 kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V
Maximum Turn-Off Switching Current – 400 Amperes
(VCC ≤ 4500V, VGE = ±15V, R
≥ 72Ω, Tj = 125°C)
G(off)
Short Circuit Capability, Maximum Pulse Width – 10 µs
(VCC ≤ 4500V, VGE = ±15V, R
≥ 72Ω, Tj = 125°C)
G(off)
Maximum Reverse Recovery Instantaneous Power – 1200 kW
(VCC ≤ 4500V, die/dt ≤ 1000A/μs, Tj = 125°C)
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
oprmax
rating (125°C).
-40 to 125 °C
stg
-40 to 125 °C
opr
5800 Volts
CES
6300 Volts
CES
6500 Volts
CES
±20 Volts
GES
10200 Volts
iso
2 8/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current* I
VCE = V
Gate-Emitter Threshold Voltage V
Gate Leakage Current I
Collector-Emitter Saturation Voltage V
IC = 200A, VGE = 15V, Tj = 125°C – 5.0 – Volts
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge QG VCC = 3600V, IC = 200A, VGE = 15V – 3.3 – µC
Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V, Tj = 25°C – 4.0 – Volts
IE = 200A, VGE = 0V, Tj = 125°C – 3.6 – Volts
Turn-On Delay Time t
Turn-On Rise Time tr V
Turn-On Switching Energy Eon Tj = 125°C, t
Turn-Off Delay Time t
Turn-Off Fall Time 1 tf1 V
Turn-Off Fall Time 2 tf2 R
Turn-Off Switching Energy E
Reverse Recovery Time 1** t
Reverse Recovery Time 2** t
Reverse Recovery Charge** Qrr Tj = 125°C, – 370 – µC
Reverse Recovery Energy** E
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
VCE = V
CES
IC = 20mA, VCE = 10V 5.0 6.0 7.0 Volts
GE(th)
VGE = V
GES
IC = 200A, VGE = 15V, Tj = 25°C – 5.1 – Volts
CE(sat)
VCE = 10V, VGE = 0V, – 41.0 – nF
ies
f = 100kHz, – 2.5 – nF
oes
Tj = 25°C – 0.7 – nF
res
VCC = 3600V, IC = 200A, – 1.2 – µs
d(on)
GE1
VCC = 3600V, IC = 200A, – 6.6 – µs
d(off)
Tj = 125°C, t
off
VCC = 3600V, IE = 200A, – 1.0 – µs
rr1
die/dt = -670A/μs, – 2.4 – µs
rr2
t
rec
, VGE = 0V, Tj = 25°C – – 3.0 mA
CES
, VGE = 0V, Tj = 125°C – 10 30.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
= -V
off
= 15V, R
GE2
= 60µs, Inductive Load – 1.5 – J/P
off
= -V
GE1
GE2
= 72Ω, – 3.3 – µs
G(off)
= 60µs, Inductive Load – 1.2 – J/P
off
= 30Ω, – 0.35 – µs
G(on)
= 15V, – 0.5 – µs
= 60µs, Inductive Load – 0.7 – J/P
Thermal Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance, Case to Fin R
Q Per IGBT – – 42.0 K/kW
th(j-c)
D Per FWDi – – 66.0 K/kW
th(j-c)
Per Module, Thermal Grease Applied – 18.0 – K/kW
th(c-f)
Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Comparative Tracking Index CTI – 600 – – –
Clearance – – 26.0 – – mm
Creepage Distance – – 56.0 – – mm
Internal Inductance L
Internal Lead Resistance R
– – 54.0 – µH
C-E(int)
– – – – mΩ
C-E(int)
38/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
2000
1600
, (AMPERES)
C
1200
Tj = 25°C
16V
18V
VGE = 20V
800
400
COLLECTOR CURRENT, I
0
0 2012 164 8
COLLECTOR-EMITTER VOLTAGE, V
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
1.2
VCC = 3600V
VGE = ±15V
1.0
R
= 30Ω
0.8
G(on)
LS = 200nH
Tj = 125°C
, (mC)
rr
0.6
0.4
0.2
REVERSE RECOVERY CHARGE, Q
0
0 500300 400100 200
EMITTER CURRENT, IE, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
4000
VCE = 20V
3500
3000
, (AMPERES)
C
2500
Tj = 25°C
Tj = 125°C
2000
1500
1000
500
COLLECTOR CURRENT, I
0
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
1050 2015
CE(sat)
15V
14V
13V
12V
10V
, (VOLTS)
8
7
, (VOLTS)
6
CES
5
4
3
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
VGE = 0V
Tj = 25°C
Tj = 125°C
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
1.2
VCC = 3600V
VGE = ±15V
1.0
R
, (J/PULSE)
rec
LS = 200nH
0.8
Tj = 125°C
0.6
0.4
2
1
COLLECTOR-EMITTER VOLTAGE, V
0
0 500300 400100 200 0 500300 400100 200
EMITTER CURRENT, IE, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
1.2
VCC = 3600V
VGE = ±15V
1.0
IC = 200A
, (J/PULSE)
rec
LS = 200nH
0.8
Tj = 125°C
0.6
0.4
0.2
REVERSE RECOVERY ENERGY, E
0
0 1204020 60 10080
GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
1
10
, (µs)
d(off)
0
10
SWITCHING TIME, t
-1
10
1
10
COLLECTOR CURRENT,
(TYPICAL)
2
10
VCC = 3600V
VGE = ±15V
R
= 72Ω
G(off)
R
= 30Ω
G(on)
LS = 200nH
Tj = 125°C
IC, (AMPERES)
3
10
0.2
REVERSE RECOVERY ENERGY, E
0
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
1.2
VCC = 3600V
VGE = ±15V
1.0
IC = 200A
, (mC)
rr
LS = 200nH
0.8
Tj = 125°C
0.6
0.4
0.2
REVERSE RECOVERY CHARGE, Q
0
0 1204020 60 10080
1
10
, (µs)
d(on)
0
10
SWITCHING TIME, t
-1
10
1
10
= 30Ω
G(on)
EMITTER CURRENT, IE, (AMPERES)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 3600V
VGE = ±15V
R
G(off)
R
G(on)
LS = 200nH
Tj = 125°C
2
COLLECTOR CURRENT,
10
IC, (AMPERES)
= 72Ω
= 30Ω
3
10
4 8/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
FALL TIME VS.
COLLECTOR CURRENT
1
10
, (µs)
f
0
10
SWITCHING TIME, t
-1
10
10
4.0
3.5
3.0
2.5
, (J/PULSE)
on
1
COLLECTOR CURRENT, IC, (AMPERES)
VCC = 3600V
VGE = ±15V
R
G(off)
R
G(on)
LS = 200nH
Tj = 125°C
(TYPICAL)
10
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
= 72Ω
= 30Ω
2.0
1.5
1.0
SWITCHING LOSS, E
0.5
0
COLLECTOR CURRENT, IC, (AMPERES)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
2
10
, (pF)
res
1
, C
10
oes
, C
ies
0
10
VGE = 15V
CAPACITANCE, C
f = 100kHz
Tj = 25°C
-1
10
-1
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
(TYPICAL)
0
10
2
10
VCC = 3600V
VGE = ±15V
R
= 72Ω
G(off)
R
= 30Ω
G(on)
LS = 200nH
Tj = 125°C
C
ies
C
oes
C
res
1
, (µs)
r
10
10
1
VCC = 3600V
VGE = ±15V
R
R
LS = 200nH
Tj = 125°C
0
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
= 72Ω
G(off)
= 30Ω
G(on)
4.0
3.5
3.0
2.5
, (J/PULSE)
off
2.0
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 3600V
VGE = ±15V
R
= 72Ω
G(off)
R
= 30Ω
G(on)
LS = 200nH
Tj = 125°C
1.5
SWITCHING TIME, t
-1
3
10
10
1
10
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
2
10
(TYPICAL)
3
10
4.0
VCC = 3600V
3.5
VGE = ±15V
IC = 200A
3.0
LS = 200nH
Tj = 125°C
2.5
, (J/PULSE)
off
2.0
1.5
1.0
SWITCHING LOSS, E
0.5
500300 4002001000
0
GATE RESISTANCE, RG, (Ω)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
12060 1008040200
8
VGE = 15V
7
, (VOLTS)
CES
Tj = 25°C
Tj = 125°C
6
5
4
3
2
1
COLLECTOR-EMITTER VOLTAGE, V
2
10
0
COLLECTOR CURRENT, IC, (AMPERES)
500300 4002001000
1.0
SWITCHING LOSS, E
0.5
0
0
4.0
3.5
3.0
2.5
, (J/PULSE)
on
2.0
1.5
1.0
SWITCHING LOSS, E
0.5
0
1.2
1.0
(j-c)
0.8
0.6
0.4
TRANSIENT IMPEDANCE, Rth
0.2
0
10
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
VCC = 3600V
VGE = ±15V
IC = 200A
LS = 200nH
Tj = 125°C
GATE RESISTANCE, RG, (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
SINGLE PULSE
TC = 25°C
IGBT =
R
Q =
th(j-c)
42
°K/kW
R
°K/kW
D =
th(j-c)
-2
10
-1
10
TIME, (s)
FWDI =
66
-3
500300 400200100
12060 1008040200
0
10
1
10
58/05
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