POWEREX CM200HA-24H Datasheet
CM200HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
S
D
F
T
X - M4 THD.
(2 TYP.)
J
T
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 3.661±0.01 93.0±0.25
C 2.44 62.0
D 1.89±0.01 48.0±0.25
E 1.42 Max. 36.0 Max.
F 1.34 34.0
G 1.18 30.0
H 1.14 29.0
J 0.98 Max. 25.0 Max.
K 0.94 24.0
L 0.93 23.5
Q
M
E
G
A
P
NH
B
U
K
R
E
K
Dimensions Inches Millimeters
M 0.83 21.0
N 0.69 17.5
P 0.63 16.0
Q 0.51 13.0
R 0.43 11.0
S 0.35 9.0
T 0.28 7.0
U 0.12 3.0
V 0.26 Dia. Dia. 6.5
W M6 Metric M6
X M4 Metric M4
G
V - DIA.
(4 TYP.)
L
W - M6 THD.
(2 TYP.)
C
E
C
Single IGBTMOD™
H-Series Module
200 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
□ Low Drive Power
□ Low V
□ Discrete Super-Fast Recovery
□ High Frequency Operation
□ Isolated Baseplate for Easy
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e.
CM200HA-24H is a 1200V (V
200 Ampere Single IGBTMOD™
Power Module.
Type Current Rating V
CM 200 24
CE(sat)
(135ns) Free-Wheel Diode
(20-25kHz)
Heat Sinking
CES
CES
Amperes Volts (x 50)
),
181
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200HA-24H
Single IGBTMOD™ H-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200HA-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage V
Collector Current I
Peak Collector Current I
Diode Forward Current I
Diode Forward Surge Current I
Power Dissipation P
j
stg
CES
GES
C
CM
F
FM
d
Max. Mounting Torque M6 Terminal Screws – 26 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 400 Grams
V Isolation V
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
RMS
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
200 Amperes
400* Amperes
200 Amperes
400* Amperes
1500 Watts
2500 Volts
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold V oltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V ––1.0 mA
CES
, VCE = 0V ––0.5
GES
µ
IC = 20mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 200A, VGE = 15V – 2.5 3.4** Volts
A
IC = 200A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Diode Forward Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
FM
VCC = 600V, IC = 200A, VGS = 15V – 1000 – nC
IE = 200A, VGS = 0V ––3.4 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
rr
VGE = 0V, VCE = 10V, f = 1MHz –– 14 nF
r
f
VCC = 600V, IC = 200A, ––400 ns
V
= V
GE1
= 15V, RG = 1.6Ω ––300 ns
GE2
IE = 200A, diE/dt = –400A/µs ––250 ns
rr
IE = 200A, diE/dt = –400A/µs – 1.49 –
–– 40 nF
–– 8 nF
––250 ns
––350 ns
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied ––0.040 °C/W
Per IGBT ––0.085 °C/W
Per FWDi ––0.18 °C/W
182
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