Powerex CM200EXS-34SA Data Sheet

CM200EXS-34SA

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

A

D

K

F

M

L

N

V

W

X

TH1

(6)

Th

N
T
C

E(7)

K(8) A(1)

DETAIL "A"

TH2

(5)

Es(4) G(3)

7

8

G

AK (4 PLACES)

DETAIL "B"

Tr

Di

E

H

AL (4 PLACES)

Q

R

C(2)

JJ

3456

2

P

B

1

Y

C

AB

AA

Z

AC
AD

S

T

U

Tolerance Otherwise Specified (mm)

Division of Dimension Tolerance

0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2

The tolerance of size between
terminals is assumed to ±0.4

AE

AH

AF

AJ

AG

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.09 104.0

B 2.44 62.0

C 0.47 11.9

D 3.5 89.0

E 2.44 62.0

F 0.53 13.5

G 0.69 17.66

H 0.75 19.05

J 0.14 3.8

K 0.16 4.2

L 1.97 50.0

M 0.55 14.0

N 0.87 22.0

P 2.26 57.5

Q 1.83 46.5

R 2.9 73.71

S 0.8 20.5

Dimensions Inches Millimeters

U 0.27 7.0

V 0.67 1 7. 0

W 0.64 16.4

X 0.51 13.1

Y 0.17 4.4

Z 0.49 12.5

AA 0.12 3.0

AB 0.17 Dia. 4.3 Dia.

AC 0.102 Dia. 2.6 Dia.

AD 0.088 Dia. 2.25 Dia.

AE 0.15 3.81

AF 0.045 1.15

AG 0.025 0.65

AH 0.05 1.2

AJ 0.29 7.4

AK 0.21 Dia. 5.5 Dia.

AL M5 M5

T 0.67 17.0

Chopper IGBT
NX-Series Module

200 Amperes/1700 Volts

Description:

Powerex IGBT Modules are
designed for use in switching
applications. Each module
consists of one IGBT Transistor
and one super-fast recovery diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.

Features:

£ Low Drive Power
£ Low V
£ Discrete Super-Fast

£ RoHS Compliant
£ Isolated Copper Baseplate

Applications:

£ DC/DC Converter
£ DC Motor Control
£ Brake Circuit

Ordering Information:

Example: Select the complete
module number you desire from
the table below -i.e.
CM200EXS-34SA is a 1700V
(V

CES

IGBT Power Module.

Type Current Rating
Amperes Volts (x 50)

CM 200 34

CE(sat)

Recovery Clamp Diode

for Easy Heat Sinking

), 200 Ampere Chopper

V

CES

107/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM200EXS-34SA
Chopper IGBT NX-Series Module

200 Amperes/1700 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specied

Characteristics Symbol Rating Units

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (DC, TC = 125°C)*2 IC 200 Amperes

Collector Current (Pulse, Repetitive)*3 I

Total Power Dissipation (TC = 25°C)

*2,*4

P

Repetitive Peak Reverse Voltage (Clamp Diode Part, VGE = 0V) V

Forward Current (Clamp Diode Part, TC = 25°C)

*2,*4

I

Forward Current (Clamp Diode Part, Pulse, Repetitive)*3 I

Maximum Junction Temperature T

Operating Junction Temperature T

Storage Temperature T

Case Temperature TC -40 to +125 °C

Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed T
*4 Junction temperature (Tj) should not increase beyond maximum junction
temperature (T

j(max)

j(max)

) rating.

rating.

0

51.4

42.3

29.8

16.6

35.9

30.1

36.0

Th

Tr

Tr

Di

Di

1700 Volts

CES

±20 Volts

GES

400 Amperes

CRM

2000 Watts

tot

1700 Volts

RRM

*1

200 Amperes

F

*1

400 Amperes

FRM

+175 °C

j(max)

-40 to +150 °C

j(op)

-40 to +125 °C

stg

4000 Volts

ISO

39.9

0

Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor

LABEL SIDE

2 07/12 Rev. 0

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]

CM200EXS-34SA
Chopper IGBT NX-Series Module

200 Amperes/1700 Volts

Electrical Characteristics, Tj = 25°C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Emitter Cutoff Current I

Gate-Emitter Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

(Terminal) IC = 200A, VGE = 15V, Tj = 125°C*6 — 2.40 — Volts

IC = 200A, VGE = 15V, Tj = 150°C*6 — 2.45 — Volts

Collector-Emitter Saturation Voltage V

(Chip) IC = 200A, VGE = 15V, Tj = 125°C*6 — 2.30 — Volts

IC = 200A, VGE = 15V, Tj = 150°C*6 — 2.35 — Volts

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Gate Charge QG VCC = 1000V, IC = 200A, VGE = 15V — 1100 — nC

Turn-on Delay Time t

Rise Time tr VCC = 1000V, IC = 200A, — — 100 ns

Turn-off Delay Time t

Fall Time tf RG = 1.3Ω, — — 600 ns

Repetitive Peak Reverse Current I

Forward Voltage Drop V

Clamp Di Part (Terminal) IF = 200A, VGE = 0V, Tj = 125°C*6 — 2.70 — Volts

IF = 200A, VGE = 0V, Tj = 150°C*6 — 2.60 — Volts

Forward Voltage Drop V

Clamp Di Part (Chip) IF = 200A, VGE = 0V, Tj = 125°C*6 — 2.60 — Volts

IF = 200A, VGE = 0V, Tj = 150°C*6 — 2.50 — Volts

Reverse Recovery Time t

Reverse Recovery Charge Q

Turn-on Switching Energy per Pulse Eon VCC = 1000V, IC = IF = 200A, — 46.0 — mJ

Turn-off Switching Energy per Pulse E

Reverse Recovery Energy per Pulse E

Internal Lead Resistance R

Per Switch,TC = 25°C

Internal Gate Resistance rg Per Switch — 2.5 — Ω

*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.

VCE = V

CES

±VGE = V

GES

IC = 20mA, VCE = 10V 5.4 6 6.6 Volts

GE(th)

IC = 200A, VGE = 15V, Tj = 25°C*6 — 2.20 2.7 Volts

CE(sat)

IC = 200A, VGE = 15V, Tj = 25°C*6 — 2.10 2.6 Volts

CE(sat)

— — 35 nF

ies

VCE = 10V, VGE = 0V — — 1.5 nF

oes

— — 0.35 nF

res

— — 400 ns

d(on)

VGE = ±15V, — — 700 ns

d(off)

Inductive Load — — 1 mA

RRM

*1

IF = 200A, VGE = 0V, Tj = 25°C*6 — 4.10 5.3 Volts

F

*1

IF = 200A, VGE = 0V, Tj = 25°C*6 — 4.0 5.2 Volts

F

*1

VCC = 1000V, IF = 200A, VGE = ±15V — — 300 ns

rr

*1

RG = 1.3Ω, Inductive Load, Clamp Di Part — 21.3 — µC

rr

VGE = ±15V, RG = 1.3Ω, Tj = 150°C, — 52.0 — mJ

off

*1

Inductive Load, Clamp Di Part — 42.0 — mJ

rr

CC' + EE'

Main Terminals-Chip, — — 2.0 mΩ

, VGE = 0V — — 1 mA

CES

, VCE = 0V — — 0.5 µA

GES

*2

35.9

30.1

39.9

0

51.4

42.3

29.8

16.6

36.0

Th

Tr

Tr

Di

Di

0

Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor

LABEL SIDE

307/12 Rev. 0