Powerex CM200DY-24NF Data Sheet

CM200DY-24NF
A
XW
FF
B
N
L
(4 PLACES)
D
M NUTS (3 PLACES)
G
G
H
KKK
P P
P
T THICK U WIDTH
QQ
V
C
S
R
G2
E2
E1
G1
C1E2C2E1
T
C
MEASURED POINT
(BASEPLATE)
LABEL
C2E1 E2 C1
G2
E2
E1
G1
E
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™ NF-Series Module
200 Amperes/1200 Volts
Description:
Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half­bridge configuration with each tran­sistor having a reverse-connected super-fast recovery free-wheel diode. All components and inter­connects are isolated from the heat sinking baseplate, offering simpli­fied system assembly and thermal management.
Features:
£ Low Drive Power £ Low V
CE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
C 1.18+0.4/-0.02 30.0+1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.89±0.01 48.0±0.25
L 0.26 Dia. Dia. 6.5
M M6 Metric M6
Dimensions Inches Millimeters
£ AC Motor Control £ UPS £ Battery Powered Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM200DY-24NF is a 1200V (V 200 Ampere Dual
IGBTMOD™ Power Module.
Type Current Rating Amperes Volts (x 50)
CM 200 24
CES
V
CES
),
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-24NF Dual IGBTMOD™ NF-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DY-24NF Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature T
Collector-Emitter Voltage (G-E Short) V
Gate-Emitter Voltage (C-E Short) V
Collector Current*** (DC, TC´ = 112°C) IC 200 Amperes
Peak Collector Current ICM 400* Amperes
Emitter Current** (TC = 25°C) IE 200 Amperes
Peak Emitter Current** IEM 400* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj 150°C) PC 1130 Watts
Mounting Torque, M6 Main Terminal 40 in-lb
Mounting Torque, M6 Mounting 40 in-lb
Weight 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
–40 to 125 °C
stg
1200 Volts
CES
±20 Volts
GES
2500 Volts
ISO
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
VCE = V
CES
VGE = V
GES
IC = 20mA, VCE = 10V 6.0 7.0 8.0 Volts
GE(th)
IC = 200A, VGE = 15V, Tj = 25°C 1.8 2.5 Volts
CE(sat)
, VGE = 0V 1.0 mA
CES
, VCE = 0V 0.5 µA
GES
IC = 200A, VGE = 15V, Tj = 125°C 2.0 Volts
Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V 1350 nC
Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V 3.2 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Inductive Turn-on Delay Time t
Load Rise Time tr VCC = 600V, IC = 200A, 150 ns
Switch Turn-off Delay Time t
Time Fall Time tf Inductive Load 350 ns
Diode Reverse Recovery Time** trr Switching Operation, 250 ns
Diode Reverse Recovery Charge** Qrr IE = 200A 7.5 µC
*Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***TC´ measured point is just under the chips. If this value is used, R
47 nf
ies
VCE = 10V, VGE = 0V 4 nf
oes
0.9 nf
res
500 ns
d(on)
d(off)
V
= V
GE1
should be measured just under the chips.
th(f-a)
= 15V, RG = 1.6Ω, 600 ns
GE2
j(max)
rating.
2
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